GOX 2022 Wednesday Morning

Sessions | Time Periods | Topics | Schedule Overview

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Session Wednesday, August 10, 2022
8:45 AM 9:45 AM 10:45 AM
Remarkable Improvement of Conductivity in Β-Ga2O3 by High-Temperature Si Ion Implantation
Towards Lateral and Vertical Ga2O3 Transistors for High Voltage Power Switching
Comparison of β-Ga2O3 Mosfets With TiW and NiAu Metal Gates for High-Temperature Operation
High Electron Mobility Si-doped β-Ga2O3 MESFETs
β-Ga2O3 Lateral FinFETs Formed by Atomic Ga Flux Etching
Insights Into the Behaviour of Leakage Current in Lateral Ga2O3 Transistors on Semi-Insulating Substrates
Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
Electromigration of Native Point Defects and Breakdown in Ga2O3 Vertical Devices
Plenary Lecture: Fundamental Limits of Ga2O3 Power Devices and How to Get There
Sessions | Time Periods | Topics | Schedule Overview