AVS2001 Session PS1+MM-MoM: Science & Technology of Microplasmas and MEMS Processing

Monday, October 29, 2001 9:40 AM in Room 103

Monday Morning

Start	Invited?	Item
9:40 AM	Invited	PS1+MM-MoM-1 The Challenges of Plasma Etching in MEMs Processing G.R. Bogart, J.T.C. Lee, A. Kornblit, H.T. Soh, K.E. Teffeau, F.P. Klemens, J.F. Miner (Agere Systems) The rapid advancement in semiconductor technology has allowed for the design and manufacture of more complex microelectromechanical systems (MEMs). Tiny gears and simple microchannels have yielded to more complex integrated systems on a single chip. The applications of this new technology span multiple disciplines and accounts for the wider acceptance of these systems in the market place. While there are numerous methods to generate these micromachines, dry etching provides a level of manufacturing control that wet etching cannot deliver. Additionally, processes that were once limited to wet etching are now being asked of dry etching due to the added control. As an example, large ultra-thin membrane generation, while generally limited to wet etch processes, is now a possibility using dry etching techniques. For optical telecommunications components, the use of thin, silicon on insulator (SOI) wafers allows one to easily combine bulk micromachining with surface micromachining to generate well supported free standing structures. The new requirements that are being placed on dry etching processes have created issues that need to be handled in creative ways. Increasing aspect ratios with 90 degree sidewall angle specifications are competing against demands for higher etch rates, uniformity, selectivity, and other processing metrics. This paper will address some of the challenges that lie ahead for dry etching in the MEMs area.
10:20 AM		PS1+MM-MoM-3 Maskless Etching of Silicon using Patterned Microdischarges K.P. Giapis, M. Sankaran (California Institute of Technology) Hollow cathode microdischarges have gained recent attention for their high-pressure operation and intense UV radiation. Due to their non-Maxwellian electron energy characteristics, they are capable of producing excited states such as excimers and radicals. For this reason, these discharges could serve as a source of reactive species for materials applications. In this talk, we will present the operation of CF4/Ar microdischarges and their potential use in silicon etching. Because of the ability to form discharges in small holes and lines, we have used devices as stencil masks to transfer patterns directly into bare substrates. Devices employed were fabricated in copper-polyimide structures with hole diameters of 200 µm. Discharges in flowing gas mixtures (25 sccm CF4 / 75 sccm Ar) were operated at 20 Torr with DC voltages less than 400 V and currents between 0.01-1 mA. Optical emission spectroscopy was used to detect the presence of etchants such as fluorine radicals. To etch n-type silicon (100), the 2-layer structure was patterned and pressed against the substrate. With the silicon as the cathode of the device, etch rates were found to be larger than 7 µm/min. SEM images showed profiles with a peculiar shape attributed to the expansion of the plasma into the etched void. The plasma expansion was also monitored by I-V characteristics which showed an approximate linear increase in discharge current during the etch time. This technique has also been applied to etching arrays of multiple holes and lines with similar resulting etch rates and profiles. Maskless pattern transfer in this dimensional range presents an alternative to laser drilling and ultrasonic milling.
10:40 AM		PS1+MM-MoM-4 Efficiency of Microfabricated ICP Sources¹ F. Iza, J.A. Hopwood (Northeastern University) Recently a micromachined 5 mm-inductively coupled plasma (ICP) source and its use in optical spectroscopy have been reported.^2,3 The performance of this device in terms of ion density and power efficiency was poorer than expected in comparison with larger ICP systems. A simple model for micro-ICP sources suggested that increasing the frequency of operation and the coupling between the source and the plasma could lead to improved performance. New microfabricated devices operating at higher frequencies (690 MHz-818 MHz) and with improved coupling coefficients have been fabricated and characterized. Argon plasmas have been generated between 100 mtorr and 12 torr and have been sustained with as little as ~100mW. Probe measurements have been carried out to determine the ion density and electron temperature versus coupling coefficient, frequency, pressure and power. The electron temperature increases from 3 eV to 4.5 eV as the pressure decreases from 0.4 to 0.1 torr (53.3~13.3 Pa) independently of the frequency of operation and power absorbed by the device. Improved coupling coefficients lead to ion densities of 9x10¹⁰ cm^-3 at 400 mtorr while consuming only 1W. This ion density is three times larger than in previous micro-ICP sources under the same conditions. Increasing the frequency from 690 MHz to 818 MHz, however, does not increase the efficiency as predicted by previous models. A new model that incorporates the power dependence of the plasma resistance will be presented to explain this behavior. ¹This work is supported by the NSF under Grant No. DMI-0078406. ²J.Hopwood, O. Minayeva, and Y. Yin, "Fabrication and characterization of a micromachined 5 mm inductively coupled plasma generator", J. Vac. Sci. B 18, 2446, (2000). ³O. Minayeva, and J.A. Hopwood, "Optical Emission Study of a Microfabricated Inductively Coupled Plasma", AVS 47th International Symposium, Paper MM-WeM4.
11:00 AM		PS1+MM-MoM-5 Microhollow Cathode Discharge Flow and Stability D.D. Hsu, M.A. Nierode, D.B. Graves (University of California, Berkeley) The microhollow cathode (MHC) is a geometry used to sustain atmospheric-pressure glow discharges. Flowing gas through an array of MHCs could be used to process surfaces. For example, nitrogen gas can be flowed through a microhollow cathode discharge (MHCD) in order to incorporate nitrogen onto a polymer, such as polyethylene terephthalate. Convective gas flow through the MHCD is found to affect the stability of these discharges. For example, helium flow greater than 300 sccm through a 200 µm hole at atmospheric pressure allows the MHCD to be sustained at a lower power than a stagnant helium discharge. In addition, the neutral temperature, measured by optical emission spectroscopy, of a helium-nitrogen discharge decreases when going from a stagnant discharge to one with gas flow. Higher flowrates of nitrogen through the hole cause the current to transition from a direct current to a pulsing current. The pressure drop across the hole and the gas flowrate suggest that Poiseuille flow can be used to model flow through an MHC. With pressure, peak temperature, and power deposition data, a fluid model of the discharge can help determine the spatial extent and temperature profile of the discharge. We will discuss the stability limits of these microplasmas as a function of power, pressure, gas flow, and gas composition.
11:20 AM		PS1+MM-MoM-6 Experimental and Numerical Model Investigations of Miniature Microwave Plasma Sources D. Story, T.A. Grotjohn, J.A. Asmussen (Michigan State University) In the past, the challenge in microwave plasma research was to develop techniques that provide high ion and free radical densities uniformly, over large and ever increasing process areas. Since scale-up was usually an important issue when considering industrial applications, the study of very small microwave plasmas, on the order of a few millimeters, was rarely done. Recently, interest in the development of systems on a chip, MEMS and their related micro system applications, has suggested the possibility of numerous applications for mini and micro plasma sources. Accordingly, this investigation is devoted to the development and the understanding of the behavior of very small microwave plasma sources. We have constructed two microwave plasma systems that create and allow for the experimental investigation of millimeter size plasmas. Plasma are generated across a wide range of input parameters, including pressure variation from below 1 Torr to 1 atmosphere, input power at 2.45 GHz from one watt to 100 watts, and a variety of gas mixtures including argon, nitrogen and hydrogen. Microwave plasma of various sizes (volumes) and aspect ratios are studied. Plasma density, size, shape, ignition, and emission spectra are monitored during each experiment to characterize the miniature plasma over the operating range. Companion global model and two dimensional numerical models will be developed and used to further understand the operation of miniature microwave plasma sources. The experimental and modeling results will identify the experimental operating regime necessary to excite and maintain stable, high density, miniature microwave plasma sources and will also identify the important figures of performance, such as electron temperature versus pressure/power and absorbed power densities versus pressure and plasma size.
11:40 AM		PS1+MM-MoM-7 Potential and Current Profiles of Nitrogen Gas DC Microplasmas C.G. Wilson, Y.B. Gianchandani, A.E. Wendt (University of Wisconsin-Madison) We have recently reported on¹ DC microplasmas which have been generated between patterned thin-film metal electrodes on the surface of a wafer. Typical operating pressure and power density are in the range of 1-20 Torr and 1-10 W/cm², respectively. The plasma extent can be varied from <100 µm to >1 cm by variations in the electrode area, operating pressure and power. Silicon etch rates of 4-17 µm/min have been achieved. This technology allows multiple independent etching microplasmas to be operated on a single silicon wafer, enabling parallel or consecutive processing. Applications for this include trimming of electronic and micromechanical components, ranging from resistors to resonant gyroscopes. In this paper we will report on characteristics of microplasmas generated by co-planar in-situ electrodes. Breakdown voltage has been found to differ from the Paschen curve, being more uniform over a wider range of pressures. Contour plots of the floating potential of microplasmas have been measured, and the bulk of the voltage drop in the plasma column has been found to be proximate to the cathode. The floating potential is non-uniform at equal heights over the cathode and is lowest close to the center of the electrode. The height of the plasma column is found to scale with operating pressure, ranging in height from 3000-900 µm as pressure changes from 1.2-6 Torr. The internal voltage drop in the plasma column is considerable, and varies with the power density and pressure. At lower pressures, the current is found to be denser at the outer edges of the electrodes, and at higher pressures the current moves to the inner edges, becoming more uniform as the power density increases. We explore the effects of these results on silicon etching performance. ¹ C.G. Wilson, Y.B. Gianchandani, "Silicon Micromachining Using In Situ DC Microplasmas," Journal of Microelectricalmechanical Systems, Mar. 2001, pp. 50-54.