ALD/ALE 2025 Tuesday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Tuesday, June 24, 2025
1:30 PM 2:30 PM 3:30 PM 4:30 PM
AA-TuA
Characteristics of ALD IGZO for the application in Stackable DRAM Cell
5 nm Thick Indium Nitride Channel Layers Fabricated by PEALD for 3D Transistor Architectures
Bottom-Up Mo Fill for Metal Interconnect Applications: Selective and Superconformal Approaches
Thermal Atomic Layer Deposition of Sn-incorporated MoO2 Electrode Films for High-performance TiO2-based DRAM Capacitors
Highly Ordered Crystalline ALD-InGaO Thin Films with High Mobility and Thermal Stability for Next-Generation 3D Memory Devices
Amino Acid-Based BiomimeticOrganic-Inorganic Hybrid Memristors by Molecular Layer Deposition for Neuromorphic Applications
Design of Crystalline InGaO Channels with High-Temperature Stability via Thermal ALD Process Parameter Variations
Break & Exhibits
AF1-TuA
Interface Evolution in ALD of HfO2 on TiN: LEIS and XPS in Vacuo Studies
In Situ Ambient Pressure X-ray Photoelectron Spectroscopy Study of Atomic Layer Deposition of Hafnium Oxide on (Ag,Cu)(In,Ga)Se2 Absorbers Relevant for Thin Film Solar Cells
Development of a Home-Built Atomic Layer Deposition Reactor for in-Situ Synchrotron GISAXS and XAS Characterization 
Evaluation of Initial Nucleation of Co-ALD by CCTBA Using in-Situ Reflectance Monitoring and Atomistic Simulator Based on Neural Network Potential
Low Energy Ion Scattering Analysis of GC/IrOX /SiO2 Layer Structure
Tailoring Interface and Bulk Properties: An Oxidant Co-Dosing Approach to ALD Growth of Hafnia Thin Films
Mechanical Properties and Wear Resistance of Atomic Layer Deposited Ternary Cr-Hf-O Films: A Comparative Study with Binary Chromium Oxide and Hafnium Oxide Films
In-situ X-ray photoelectron spectroscopy for determining oxidation state, composition, and morphology of ALD-based CeOx, SnOx, and CexSn1-xOy deposits
Break & Exhibits
AF2-TuA
Controlling the Crystalline Nature of PEALD Thin Films Through Tuning of Plasma Characteristics
Comparative Study of CeO₂ Thin Films Prepared by Plasma-Enhanced and Thermal Atomic Layer Deposition Using a New Liquid Ce Precursor
Tuning Crystallinity of Plasma-Enhanced Atomic Layer Deposited Aluminum Nitride Thin Films using an Electron Cyclotron Resonance Microwave Source
Plasma-Enhanced Atomic Layer Deposition of High-Quality InN Thin Films Using a Novel In Precursor and NH3 Plasma
Insights Into Tuning TiO2 Film Property Distribution in 3D Structures During Peald Process
Plasma-Enhanced ALD Process for Boron Carbide Films: Towards Tunable B:C Ratio
ALE1-TuA
Isotropic and Anisotropic ALE: Tool Aspects, Processes, and Applications
Study on Plasma Induced Damaged Layer Formation Using Molecular Dynamics
Theoretical Analysis on Crystalline Phase-Dependent Surface Fluorination of HfO₂ for Atomic Layer Etching
Removal Reaction Mechanisms During Thermal Atomic Layer Etching of Aluminum Oxide: A First-Principles Study
Multiscale Modeling of Gallium Nitride Atomic Layer Etching in Chlorinated Plasmas: A Combined Dynamic Global Model, Ab-initio and Kinetic Monte Carlo Approaches
Utilization of Molecular Dynamics Simulations and a Reduced Order Model to Analyze the Atomic Layer Etching Window of the Si-Cl2-Ar+ System
Characteristics of the Power Delivery System of Transformer-Coupled Plasma Source for Remote Plasma Process in Semiconductor Manufacturing
Break & Exhibits
ALE2-TuA
Development of an Atomic Layer Etching Process Dedicated to Diamond Material
Atomic Layer Etching of MgO-doped Lithium Niobate Using Sequential Plasma Exposures
Comparison of Gas-Pulsing Atomic Layer Etching (ALE) Characteristics Between Low-GWP Alternative Gases C₄F₆, C₄H₂F₆ and a Conventional Gas C₄F₈
The Influence of Laminate Doping of Atomic Layer Etching of Zinc Oxide
Ale of Tin Using Sf6:H2 Plasma: The Role of H, F, and Hf in Defining the Ale Window
Atomic Layer Etching of Ruthenium Using Surface Oxidation with O2 Plasma and Chelation with Formic Acid
AS-TuA
Surface Chemistry Characterization for Area-Selective Atomic Layer Deposition of Ruthenium
Dopant-Selective Atomic Layer Deposition (DS-ALD) for Fabrication of Electronic Devices
ALD Outstanding Presentation Award Finalist: High Temperature Area Selective ALD SiN by in-Situ Selective Surface Fluorination
Mutifunctional Ru/ZnO Bilayer for Sustainable Cu Interconnects using Area-Selective Atomic Layer Deposition of barrier with Small Molecule Inhibitor
Technological Promise of a Frustratingly Elusive Ni(tbu2DAD)₂—Yet the Challenge is Part of the Breakthrough
EM-TuA
Vapor Phase Infiltration for Membrane Modification
Dry Developing Process of Molecular Layer Deposited Hf-Based Hybrid Thin Films for EUV Lithography
Inverted Living Molecular Layer Deposition: Rapid Conformal Polymer Coatings through Vapor-Phase Living Polymerization
ALD Outstanding Presentation Award Finalist: Recent Advancement of Inorganic-Organic Hybrid Resist Thin Films Deposited via Molecular Atomic Layer Deposition for Dry EUV Resist Platforms
Rethinking Thermoelectrics: The „Power” of Hybrids Engineered by Vapor Phase Infiltration
Plasma-Pretreated ALD Growth of Platinum Catalysts on Carbon Nanotubes for Polymer Electrolyte Membrane Fuel Cell Applications
Break & Exhibits
NS-TuA
Towards Low-Resistance P-Type Contacts to 2D Transition Metal Dichalcogenides Using Plasma-Enhanced Atomic Layer Deposition
Selective Passivation of 2D TMD Surface Defects by Atomic Layer Deposition for Enhancing Recovery Rate of Gas Sensor
Beyond the conventional AB process: Advanced ALD approaches for controlling the properties and growth of MoS2 and WS2 2D Materials
Deposition and Characterization of Transition Metal Oxide/2d Transition Metal Dichalcogenide Quantum Wells
Engineering Al₂O₃ Interlayer via Atomic Layer Deposition for Enhancing Contact Properties of MoS₂-Based FET
Sessions | Time Periods | Topics | Schedule Overview