ALD2018 Tuesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
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| Session | Tuesday, July 31, 2018 | |||||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | 4:30 PM | |||||||||||||
| AA-TuA | 
                                 
                                    Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Nonvolatile Memory Devices
                                    
                                 
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                                    Atomic Layer Deposition of Elemental Tellurium for Composition Tuning Of Ovonic Threshold Switching Materials
                                    
                                 
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                                    Plasma Enhanced Atomic Layer Deposition of Low Temperature Silicon Nitride for Encapsulation Layer using Novel Silicon Precursor
                                    
                                 
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                                    Atomic Layer Delta Doping and Deposition of Ultrathin Metallic TiN-based Channel for Room-temperature Field Effect Transistor
                                    
                                 
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                                    Influences of Annealing Conditions on Characteristics of Sn-doped Zinc Oxide Thin Film Transistors Fabricated by Atomic Layer Deposition
                                    
                                 
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| AF1-TuA | 
                                 
                                    Studying Metal ALD Processes through X-ray Based in situ Characterization
                                    
                                 
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                                    Stresses in ALD Films: Aiming for Zero Stress Thin Films
                                    
                                 
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                                    High-throughput Screening of Atomic Arrangements of Surface and Interfacial Structures of ALD-deposited Thin Films
                                    
                                 
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                                    Application of Low Energy Ion Scattering for Characterization of Modern ALD Films of Industrial Relevance
                                    
                                 
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                                    Characteristic Evaluation of ZrO2 Thin Films by PEALD to Semiconductor and Display using Cp-Zr Precursor
                                    
                                 
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                                    Hybrid Electronically Tailorable Dielectric Thin Films and Substrate Effects on Electrical and Chemical Properties of ALD Al2O3
                                    
                                 
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                                    Atomic Layer Deposition of Pyrite FeS2, CoS2, and NiS2
                                    
                                 
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| AF2-TuA | 
                                 
                                    Modeling the Infiltration Kinetics of Porous, High Surface Area Materials in ALD: Effective Diffusivities, Saturation Times, and Densification
                                    
                                 
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                                    Thin Film Conformality Analysis, Reliability and Modeling using All-silicon Lateral High Aspect Ratio Structures
                                    
                                 
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                                    High Step Coverage Properties of New Zr Precursors with High Thermal Stability for High-k
                                    
                                 
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                                    Atomic Layer Deposition: Tailoring High Aspect Ratio TiO2 Nanostructures
                                    
                                 
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                                    Mechanisms Limiting Conformality in Thermal and Plasma-assisted ALD Investigated by Lateral High Aspect Ratio Structures
                                    
                                 
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                                    Multilayers on Reinforcement Fiber Fabrics with ALD
                                    
                                 
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| ALE1-TuA | 
                                 
                                    Mechanism of HF Pulse in the Thermal Atomic Layer Etch of Al2O3
                                    
                                 
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                                    Low-K Dielectric Etch Challenges at the 7nm Logic Node and Beyond: Continuous-wave vs. Quasi-atomic Layer Plasma Etching Performance Review
                                    
                                 
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                                    Precise Etching Profile Control by Atomic-scale Process
                                    
                                 
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| ALE2-TuA | 
                                 
                                    Thermal Selective Etching on Metal Oxide and Nitride Film
                                    
                                 
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                                    Benefits of Atomic Layer Etching for Material Selectivity
                                    
                                 
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                                    Approaching Atomic Scale Precision for Etch Technology Needs in the Semiconductor Industry
                                    
                                 
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| AM-TuA | 
                                 
                                    Open Air Processing of Innovative Transparent Conductive Materials with Spatial ALD
                                    
                                 
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                                    Conformality of SiO2 and Al2O3 Coatings Produced using High Speed Spatial ALD with a DC Plasma
                                    
                                 
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                                    Characterizing Precursor Delivery from Vapor Draw Ampoules
                                    
                                 
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                                    Monitoring Conformality in ALD Manufacturing: Comparing Lateral and Vertical High Aspect Ratio Test Structures
                                    
                                 
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                                    A Remote Plasma Spectroscopy Based Method for Monitoring of Atomic Layer Deposition Processes
                                    
                                 
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| AS-TuA | 
                                 
                                    Integrated Isothermal Atomic Layer Deposition and Thermal Atomic Layer Etching: “Atomic-Level Processing” for Area-Selective Patterning of TiO2
                                    
                                 
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                                    Inherent Substrate Selectivity and Nucleation Enhancement during Ru ALD using the RuO4-Precursor and H2-gas.
                                    
                                 
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                                    Surface Preparation and High Nucleation for Selective Deposition using Anhydrous Hydrogen Peroxide
                                    
                                 
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                                    An Inherently Selective Atomic Layer Deposition of MoSix on Si (001) in Preference to Silicon Nitride and Silicon Oxide
                                    
                                 
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                                    Investigating the Difference in Nucleation during Si-based ALD on Different Surfaces (Si, SiC, SiO2 and SiNx) for Future Area-Selective Deposition (AS-ALD)
                                    
                                 
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                                    Strategies for Area Selective Atomic Layer Deposition and Applications in Catalysis
                                    
                                 
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| EM-TuA | 
                                 
                                    Simultaneous Enhancement of Toughness and Elimination of the UV Sensitivity of Kevlar with a Combined ALD/MPI Process
                                    
                                 
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                                    Mutual Synergistic Doping in Conductive Hybrid Materials Obtained after Vapor Phase Infiltration
                                    
                                 
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                                    Infiltration Synthesis of ZnO in a Non-reactive Polymer Facilitated by Residual Solvent Molecules
                                    
                                 
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                                    Thermal Conductivity in Layer-engineered Inorganic-Organic Thin Films
                                    
                                 
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                                    Reversible Trans-cis Photoisomerization of ALD/MLD-fabricated Azobenzene-based Inorganic-Organic Thin Films
                                    
                                 
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                                    Organic/Inorganic Nanocomposite Synthesis through Sequential Infiltration of 3D Printed Polymer Parts: A Microstructural Study
                                    
                                 
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                                    Reactivity of Common ALD Precursors with OH/H2O-containing Metal Organic Framework Materials
                                    
                                 
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                                    Atomic/Molecular Layer Deposition of Inorganic-Organic Carboxylate Network Thin Films for Possible Sensing Applications
                                    
                                 
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| NS+ | 
                                 
                                    Atomic Layer Etching and Chemical Vapor Etching of 2D Materials and Metal Oxide Films using MoF6-H2O
                                    
                                 
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                                    Membranes by Atomic Layer Deposition: Design and Applications
                                    
                                 
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                                    Field-effect Transistor using Two-dimensional Electron Gas in ALD Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructure Interface
                                    
                                 
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                                    Increased WS2 Crystal Grain Size by Controlling the Nucleation Behavior during Plasma Enhanced Atomic Layer Deposition
                                    
                                 
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                                    Controlling Material Properties of Nanostructured WS2 during Plasma ALD for Improved Electrochemical Performance
                                    
                                 
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