ICMCTF2003 Session F4-1: Microstructural, Microanalytical and Imaging Characterization

Monday, April 28, 2003 10:30 AM in Room Royal Palm 4-6

Monday Morning

Start	Invited?	Item
10:30 AM	Invited	F4-1-1 Transmission Electron Microscopy of Advanced Thin Film Materials Part 1: TEM Techniques for Nano-scale Analysis A. Trampert (Paul Drude Institute for Solid State Electronics, Germany) The functionality of advanced materials strongly depends on the complex defect microstructure which is itself affected by the particular growth process and the system dimension. The characterization and analysis of these materials on the nanometer scale is thus indispensable for a detailed understanding of the physical properties. Transmission electron microscopy (TEM) is an important tool for studying the atomic structure, the local chemistry and electronic configuration with extremely high spatial resolution ("nanoanalytics"). The basics of high-resolution TEM and analytical TEM methods like electron energy loss spectroscopy (EELS) are generally described with the focus on their application to advanced materials characterization. In order to highlight the experimental possibilities, recent examples from our research areas are discussed: (1) The study of group III-nitride epitaxial thin films which are used for optoelectronic devices. (2) Ferromagnetic-semiconductor hybrid structures which can be utilized for spintronics. Furthermore, the preparation of thin foils will be mentioned together with its signification for the TEM analysis. And finally, future developments in TEM will be discussed.
11:10 AM	Invited	F4-1-3 Transmission Electron Microscopy of Advanced Thin Film Materials Part 2: Application on Layer Structures for Information Technology A. Trampert (Paul Drude Institute for Solid State Electronics, Germany)
11:50 AM		F4-1-5 Investigation of Solid Reaction Between Fe and Si_0.8Ge_0.2 Y.-L. Chuen, H.T. Lu (National Tsing Hua University, Taiwan, ROC); L.J. Chen (National Tsing Hua University, Taiwan, R.O.C.); L.J. Chou (National Tsing Hua University, Taiwan, ROC) SiGe has attracted many attentions because of its applications to band gap engineering by varying the fraction of Ge in the Si_1-xGe_x. In many device applications, to make the Schottky or ohmic contact for Si_1-xGe_x are the interesting and crucial topics. Therefore, metals such as Pt Pd, and Ti have been reported for their solid reaction with the Si_1-xGe_x. On the other hand, in recently years, the beta-iron disilicide is of interested on development of the light emitting materials on silicon substrate. However, the detail stories of solid reaction for Fe and Si_1-xGe_x were still unclear. In this study, by using high resolution transmission electron microscopy (HRTEM) as well as others microstructure analytical tools, to investigate the reaction phenomena between Fe and Si_0.8Ge_0.2 in different growth parameter, subsequently, at varies post annealing temperatures were presented. The Si_0.8Ge_0.2 was deposited on Silicon (001) substrate by UHV-CVD, and its composition was confirmed by X-ray Racking curve, indicated that the fraction of Ge was 0.198%. The iron film was then deposited on top of the Si_0.8Ge_0.2 by UHV E-beam evaporation method. The TEM data indicated that after annealing process, Ge will segregate between the gain boundary of Si and silicide indicated that the iron prefer to react with Si than Ge. The results of the XRD and EDS analysis showed that the phases was FeSi at 850. The stress-strain effects between films were investigated by Raman spectroscopy, some interesting results will also be presented.