ICMCTF1999 Session F4: Microstructural, Microanalytical and Imaging Characterization

Tuesday, April 13, 1999 1:30 PM in Room San Diego

Tuesday Afternoon

Time Period TuA Sessions | Abstract Timeline | Topic F Sessions | Time Periods | Topics | ICMCTF1999 Schedule

Start Invited? Item
1:30 PM F4-1 Magnetism and Microstructures in Thin Films, Multilayers and Nanostructures
K.M. Krishnan (Lawrence Berkeley National Laboratory)
The optimization of the magnetic properties of materials for a wide range of applications requires a dynamic iteration between synthesis, property measurements and the evaluation/control of microstructure (physical, chemical & magnetic) at the appropriate length scales. In atomically engineered thin films and nanostructures, much of the novel physical properties observed, such as perpendicular anisotropy and giant magnetoresistance, are due to the physical and chemical structure of the interfaces. In nanostructured materials, the coercivity and remanence can be tailored by controlling grain size/shape, defects, and most importantly, intergranular coupling and/or isolation. In manganites exhibiting colossal magnetoresistance, the stoichiometry, strain and interatomic distances and bond angles determine the transport and the nature of the charge carriers. In all these cases, the relevant scale of the microstructure, critical in understanding and optimizing magnetic behavior, ranges from the atomic (~Å), to interfaces (few monolayers) and finally to the grains ( nm - microns) themselves. Hence, recent breakthrough in magnetic materials follow from both advances in materials synthesis and the ability to characterize them by electron-optic and x-ray scattering/dichroism techniques at the appropriate length scales. I shall describe our research in these areas, highlighting the connection between, magnetism and microstructure, the role of processing and advanced characterization methods. These ideas will be illustrated with examples from our work on (a) perpendicular anisotropy and inter-layer coupling in metallic heterostructures (b) tailored microstructures in hard magnet thin films and nanostructures and © magnetotransport in manganite perovskites.
2:10 PM F4-3 Structural Analysis of (Ti 1 - x Al x)N Graded Coatings Deposited by Reactive Magnetron Sputtering
M. Pinkas, J. Pelleg, M.P. Dariel (Ben-Gurion University of the Negev, Israel)

Graded (Ti1-x Alx)N coatings were prepared by reactive magnetron co-sputtering of Ti and Al on silicon and glass substrates in an Ar+N2 atmosphere. The N2 content was kept constant in the gas mixture and the composition of the (Ti1-x Alx)N film was controlled by the power applied to the targets.

The composition of the graded films was determined both by Auger electron spectroscopy (AES) depth profiling and by energy dispersive spectroscopy (EDS) of their cross sections. Phase determination was performed by x-ray diffraction (XRD) and by selected area electron diffraction (SAED). Transmission electron microscopy (TEM) of the cross sections was used to determine the microstructure of the graded films. Interfaces between the films and substrates and within the films were investigated by high resolution TEM (HRTEM).

AES depth profiling and EDS from the cross sections confirmed the formation of (Ti1-x Alx)N films with graded composition. XRD and SAED showed that only the B1-NaCl phase was formed as typical for Ti-based nitrides. TEM observations of the cross sections revealed that the films had a columnar microstructure. TEM and HRTEM inspections have shown that continuos graded films with no abrupt interfaces could be deposited by a proper choice of the process parameters.

2:30 PM F4-4 An EELS Study of Commercial Carbides
M. Avalos-Borja (Centro de Ciencias de la Materia Condensada, UNAM, MEXICO); G. Alonso (Centro de Investigaciones en Materiales Avanzados, MEXICO); A. Duarte-Moller (Centro de Ciencias de la Materia Condensada, UNAM, MEXICO)

Hydrodenitrogenation (HDN), hidrodesulfurization (HDS) and hydrodeoxigenation (HDO) are the most important catalytic processes in converting crude oil and coal derived liquids into clean-burning fuels. Nickel and/or Cobalt promoted Mo and/or W sulfide catalysts are commonly used for these reactions. While Mo and W sulfide based catalysts are effective in meeting current industrial processing objectives, more stringent environmental pollution limits will require the development of new, more active and selective catalysts.

Transition metal carbides have shown great promise for use as commercial HDN and HDS catalysts. The electronic, structural and catalytic properties of early transition metals have been the subject of many experimental and theoretical investigations since these carbides often demonstrate unique catalytic advantages over their parent metals in activity, selectivity and resistance to poisoning.

Recent results in the field of catalysis indicate that part of the activity of HDS catalysts may be due to the presence of carbides, since these compounds also present substantial catalytic activity in hydrotreating reactions, especially the carbides from transition elements such as molybdenum and tungsten.

In order to identify the carbon species in real samples, we firsts decided to perform a complete comparative EELS study of ten commercial carbides. We found that at the low energy window (0 - 80 eV), the most prominent plasmon peak and other high order edge transitions make spectrum shape sufficiently distinct to allow chemical identification possible. These differences among the various carbides are more accentuated at the energy window where the carbon K-edge transition is located (250 - 400 eV). The differences in this case are more striking because the chemical state is different in each structure. Thus, it is possible to asses the chemical state of each structure and it is even possible to differentiate between two chromium carbides.

2:50 PM F4-5 High Resolution Analysis of Thin Films with the FE-SEM
J.R. Kingsley (Charles Evans & Associates)
The capability of the FE-SEM(Field Emission Scanning Electron Microscope) has seen some significant advances in recent years, which has greatly expanded the role of the FE-SEM in characterization of thin films. The wide implementation of the IL (Immersion Lens) style of SEM has improved resolution to sub-nanometer dimensions, precluding the necessity of TEM (Transmission Electron Microscopy) for some studies. With improvements in column design, low voltage performance has been greatly enhanced, both for imaging and for analysis. The ability of the Schottky FE column to provide a beam with enough current, at 3 keV, to obtain usable EDS (Energy Dispersive x-ray Spectroscopy) data has proven to be a powerful tool when combined with the spectral resolution of the Ge (germanium) EDS detector. With this combination, features as small as 0.3 microns can easily be elementally analyzed, and particles as small as 0.05 microns can provide usable elemental data if the substrate is known. For crystallographic studies, the EBSD (Electron BackScatter Diffraction) system can provide orientation information from sub-micron grains. Mapping the sample orientation with the FE-SEM can provide additional information on grain boundary location and average orientation information. Examples and data from all these techniques will be presented.
3:30 PM F4-7 High Resolution Thickness and Interface Roughness Characterization in Multilayer Thin Films by Grazing Incidence X-ray Reflectivity
I. Kojima, B. Li, T. Fujimoto (National Institute of Materials and Chemical Research, Japan)

The performance of advanced thin-film devices often depends cruci ally on their structures. Therefore, precise control of growth process and c haracterization of film thickness, surface and interface roughness with high resolution has become an important task. Grazing incidence X-ray reflectivit y is a powerful technique for investigating surfaces and multilayers. GIXR o ffers high spatial resolution, which can be as good as 0.1 nm with the measu rement of roughness and thickness. Its high penetration and nondestructive c apability are very suitable to probe buried interfaces or to study real-time processes.

In this work, several different material systems, such as Ta2O5/SiO2, Co/Cu, and SiN/Si multilayers, were studied by GIXR. The thickness determined by GIXR is found in good agreement with that by TEM . The different interface roughness feature and evolution in multilayers, th e effect of substrate roughness and annealing on the interfacial structures are successively characterized. The details will be presented.

4:10 PM F4-9 Original and Sputtering Induced Interface Roughness in AES Sputtering Depth Profiling of SiO2/ Ta2O5 Multilayers.
A. Rar (National Research Institute for Metals, Japan); I. Kojima (National Institute of Materials and Chemical Research, Japan); D.W. Moon (Korea Research Institute of Standards and Science, Korea); S. Hofmann (Max-Planck-Institute for Metals Research, Germany)

According the mixing - roughness - information depth (MRI) model1 the depth resolution function necessary for the reconstruction of compositional depth distribution from sputtering profile can be described by three physically well defined parameters: atomic mixing, surface roughness and information depth. Typical test structures for the MRI model are multilayers with well defined interfaces. The surface roughness is composed of the original roughness of an interface and the roughness induced by ion sputtering. In this study, we try to separate the original and induced roughness by using reference SiO2 / Ta2O5 multilayers samples. AES depth profiles were acquired using the low and high energy peaks of Ta and Si and the oxygen peak, which shows a shift of 6.9 eV from Si to Ta oxide layers. All peaks were used for MRI analysis. The sputter depth profiles were fitted with the MRI model in two ways, (a) without taken in to account the original roughness and (b) with the assumption that the effective roughness Ref is equal to

Ref = (Ror2 + Rind2 )1/2

where Ror and Rind are the original roughness of the interface and the roughness induced by ion sputtering, respectively . The original roughness Ror of the interfaces was measured by means of grazing incidence x-ray reflectivity (GIXR). Ror varies from interface to interface which is also recognized in depth profile. The values of Ror are in the range between 0.23 and 0.68 nm. The values of Rind were found by MRI fitting and compared with AFM measurements. Both the GIXR and MRI methods for determination of the roughness support each other and allow a more precise determination of the depth resolution function.

1 S. Hofmann, Surf. Interface Anal. 21, 673 (1994).

4:30 PM F4-10 Materials Characterization via the Internet: A Demonstration of TelePresence Microscopy
L.F. Allard, E. Voelkl, T.A. Nolan (Oak Ridge National Laboratory)
The combination of high speed communication via the Internet and the increasing capabilities of desktop computers has made it possible to extend the control of expensive scientific instruments such as electron microscopes from the laboratory to distant locations. It is now possible for scientists at widely disparate locations to participate in a "TelePresence Microscopy" session, using inexpensive teleconferencing tools and their own personal computers. This includes the ability to assume full control of the microscope operation, if desired, so that a local operator need not even be present. Collaborators doing materials research can view results and share ideas in real time, improving the potential to obtain reliable interpretation and understanding of the data. The implications of this new way for scientists to work together, unencumbered by time and space, to do better science will be explored via live demonstrations of TelePresence Microscopy with several national laboratory microscopy facilities.
Time Period TuA Sessions | Abstract Timeline | Topic F Sessions | Time Periods | Topics | ICMCTF1999 Schedule