Block copolymer DSA is a result of spontaneous microphase separation of block copolymer films, forming periodic microdomains including cylinders, spheres, and lamellae. Among all the various self-assembled structures, cylinder patterns have attracted specific interest due to their great potential in patterning electrical contacts in Integrated Circuits (ICs). Due to the random distribution of electrical contacts in layouts as well as the continuous scaling of IC circuits, patterning contacts has become increasingly challenging for traditional optical lithography. Due to the advantage of low cost and sub-20 nm feature sizes, block copolymer directed self-assembly (DSA) is a promising candidate for next generation device fabrication.

Traditionally, the study of DSA has been focused on achieving long range order and a periodic pattern in large area. Chemoepitaxy approaches including using chemical patterns of preferential affinity on the substrate surface or controlling pattern formations by tuning annealing conditions have been investigated and developed. They can improve the long range order self-assembly quality and lower the defect density over large areas. In order to use DSA to pattern the randomly distributed contacts in IC layouts, we adopt physical (topographical) templates to form irregularly distributed cylindrical patterns. Topographical templates use strong physical confinements in lateral directions to alter the natural symmetry of block copolymer and guide the formation of DSA patterns. Previously we have demonstrated that for the first time the self-assembled features can be almost arbitrarily placed as required by circuit fabrication and not limited to regular patterns, by combining templates of different types on one wafer. These various templates are akin to the letters of an alphabet and these letters can be composed to form the desired contact hole patterns for circuit layouts. The capability of arbitrary placement is demonstrated in industry-relevant circuits such as static-random-access-memory (SRAM) cells and standard logic gate libraries at a dimension that is the state-of-the-art semiconductor technology today [1]. To enable introduction of DSA into manufacturing we developed a general template design strategy that relates the DSA material properties to the target technology node requirements. This design strategy is experimentally demonstrated for DSA contact hole patterning for half adders at the 14 nm and 10 nm nodes [2].

Reference:

[1] H. Yi et al. Adv. Mater, 2012.

[2] H. Yi et al. SPIE, 2013.

Future scaling of integrated circuits (IC) is in jeopardy due to a number of challenges related to both future material and process requirements that are needed to allow for fabrication of sub-20 nm IC devices. One of the most critical challenges is that of developing patterning technologies that can allow for formation of sub-20 nm patterned structures in a fast and economically viable manner. Due to difficulties with alternative technologies, techniques that can extend the use of current 193 nm optical lithography in a cost effective manner would be very attractive. Directed Self-Assembly (DSA) using block copolymers to perform pitch subdivision of lithographically generated primary patterns is one such promising technology. In this technique, a lithographic method is first used to define a topographic or chemical template pattern on a surface. This surface is then coated with a block copolymer that is further processes to induce microphase separation. The presence of the topographic or chemical patterns on the surface aligns, registers, and provides long range order to the formed block copolymer patterns. This microphase separation-based patterning process utilizes the propensity of the block copolymer to naturally form nanometer scale patterns whose size are dictated by the polymer block molecular weight.

For advanced CMOS nodes, traditional patterning processes are challenged to meet the technology needs of certain key levels. For example, conventional 193nm immersion lithography is not able to resolve features below 40nm half pitch with a single exposure without severe design rule restrictions. Until further wavelength scaling through Extreme Ultraviolet (EUV) has matured, the industry’s attention is focused on advanced patterning schemes such as Pitch Splitting (PS) Lithography and Sidewall Image Transfer (SIT). In PS, a pattern is defined by two lithography exposure with a certain coordinate shift between the two exposures. PS can be achieved through either litho-etch-litho-etch or litho-litho-etch. In SIT, a pattern is defined by creating a mandrel in one lithography exposure, depositing a conformal spacer film on the mandrel, and pulling out the mandrel, resulting in two standing spacer for the pattern frequency doubling. This work evaluated the advantages and technical challenges of PS and SIT patterning schemes for line-space application. We will focus on CD uniformity improvement, line edge/line width roughness control, pitch walk control, and the extendability of each technique. RIE challenges common to double patterning such as through pitch etch bias will also be discussed.

This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities and in joint development with TEL Technology Center, America, LLC

High yield nanomanufacturing has been the focus of greater attention due to the emerging importance of functional nanomaterials. Electrospinning is a nanomanufacturing process that faces challenges as far as its scalability is concerned. Even the existing high-throughput electrospinning systems are limited to processing thin layers of polymer nanofibrous mats. Nanofibrous ceramics have rarely been studied with respect to their electrospinning processing. On the other hand, electrospun nanowires of ceramics are key to nanotechnology and nanomedicine applications (e.g. electrospun MoO₃ nanowires have been used as ammonia sensors for application in non-invasive diagnostics [1]). In this study, the scalable synthesis of ceramic oxide nanomats by the multi-jet design that we developed and built and which enables very high yield of ceramic nanofibers is discussed. As a scaled up approach to traditional needle electrospinning [2], up to 24 jets are spun simultaneously using similar processing parameters as a traditional needle set up. Due to a thin metallic disc design, with tiny holes drilled at the disc, the electric field is evenly distributed to all jets. Continuous replenishment of the source disk at higher flow rates allows for high yields of nanofibers.

1. P. Gouma, K. Kalyanasundaram, and A. Bishop, "Electrospun Single Crystal MoO3 Nanowires for Bio-Chem sensing probes", Journal of Materials Research, Nanowires and Nanotubes special issue, 21(11), pp. 2904-2910, 2006.
2. S. Sood, S. Divya, P. Gouma, “High throughput electrospinning of 3D nano fibrous mats”. Journal of Nanoengineering and Nanomanufacturing. Accepted Publicaition. In Print, 2013.