AVS1998 Thursday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
Session | Thursday, November 5, 1998 | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
2:00 PM | 3:00 PM | 4:00 PM | 5:00 PM | ||||||||
AS-ThA |
Sputtering Rate Change and Surface Roughening in SIMS Measurements Using Oblique and Normal Incidence Oxygen Bombardment, With and Without Oxygen Flooding
|
Secondary Ion Mass Spectrometry of Deep Trench Capacitors in Dynamic Random Access Memory
|
TOF-SIMS Depth Profiling of Novel Si Devices
|
Nitrogen Incorporation and Trace Element Analysis of Nanocrystalline Diamond Thin Films by SIMS
|
Quantitative ToF-SIMS Analysis of Industrial Polymers
|
Secondary Ion Emission from Molecular Surfaces and Overlayers under Noble Gas and Molecular Primary Ion Bombardment
|
Coincidence Counting in Highly Charged Ion Based Time-of-Flight Secondary Ion Mass Spectrometry
|
||||
EM1-ThA |
Short Range Order and Electronic Structure of Amorphous Silicon Oxinitride
|
Cathodoluminescence Spectroscopy of Nitrided Si-SiO2 Interfaces
|
Reliability of Ultra-thin Gate Dielectric formed with Nitrogen Implantation and Thermal Oxidation
|
Effect of Substrate Temperature in SiOxNy Films Deposited By Electron Cyclotron Resonance
|
Roughness at Si/SiO2 Interfaces and Silicon Oxidation
|
Energy Dispersion of the Conduction Band Mass in Ultrathin SiO2 Gate Oxides
|
Ultra Thin Silicon Oxide Film on Si(100) Fabricated by High Purity Ozone at Atmospheric Pressure
|
Mixed Silicon Dioxide / Tantalum Oxide Layers for High k MOS Gate Dielectrics Formed by Plasma Oxidation of Si and Ta Using a rf Remote N2O Plasma Source
|
Thermal Stability of a-SiNx:H Films Deposited by Plasma Electron Cyclotron Resonance
|
||
EM2-ThA |
In-Situ IR Spectroscopic Study of the Chemical Process of Si-Related CVD Thin Films
|
Integrated Real-Time Spectroscopic Ellipsometric and Reflectance Difference Measurements on a Commercial OMCVD Reactor
|
Real-Time Optical Control of Ga1-xInxP Film Growth by P-Polarized Reflectance
|
Electron Cyclotron Resonance Induced Surface and Subsurface Defects in GaAs Exposed to a Chlorine/Ar Plasma
|
Reciprocal-Space Analysis of Optical Spectra
|
Observation of Adsorption and Reaction of NH3 on Al2O3, AlN and AlON Under Steady-State Conditions Using IRRAS
|
Time of Flight Mass Spectroscopy of Recoiled Ions Comparative Studies of Gallium Nitride Thin Film Deposition By Various Molecular Beam Epitaxial Methods
|
Near-Surface Variation of Gallium Nitride Cathodoluminescence with Annealing
|
In-situ Formation, Reactions, and Electrical Characterization of MBE Grown Metal/Semiconductor Interfaces
|
||
MI-ThA |
Exchange Coupling in Co/Au/Co Sandwiches
|
Experimental and Model Theoretical Dispersions of Unoccupied Metallic Quantum Well States in Cu/fccCo/Cu(100) and Related Systems
|
Spin-Polarized Quantum Well States
|
Systematic Measurement of Exchange Coupling Across the Periodic Chart of 3-d Transition Elements to Understand Magnetization In Ferromagnetic Mn Alloys1
|
Epitaxial Fe and Co Layers on Cu Crystals
|
Fermi Surface Study of Pseudomorphic Fe1-xNix and Co1-xNix Thin Films on Cu(100)
|
Growth Study of FePt(001) L1_0 ordered alloys using a Temperature Wedge Method
|
The Effect of Oxygen on the Growth and the Surface Magnetism of Iron Films
|
Magnetic Properties of Ultrathin Fe/Gd and Gd Thin Films
|
||
NS-ThA |
Nanomanipulation for Material Properties, Interactions and Devices
|
Monitored Mechanical Nano-Manipulation
|
Field-Induced Manipulation of Ag Clusters for Tailoring of Nano-Structures on Silicon Surface
|
Probe Induced Manipulation of Bromine, Iodine, and Sulfur on Si (100)
|
Two Mechanisms of Nanostructure Growth for STM Assisted CVD1
|
Nano Scale Selective Al Growth on the Si(001)-H Surface using Dimethylethyamine Hydride
|
Modifications of Thioaromatic Monolayers by Low Energy Electrons
|
Selective Etching of the SiO2/Si Surface with Low Energy Electron Stimulated Reaction by using STM
|
Current-Induced Local Oxidation: Mechanism, Quantum-Size Effects, and Applications
|
||
PC-ThA |
Semiconductor Applications of a Quadrupole Mass Spectrometer
|
In Situ Monitoring of Semiconductor Reactive Gas Processes using Partial Pressure Analyzers
|
Emission Free Measurement of Residual Gas in XHV Using Ionization by Trapped Electrons in Magnetic Field
|
Residual Gas Analyzer Ion Current Measurement, Calibration and Partial Pressure Detection Limits
|
Practical Quadrupole Theory: RGA Characteristics
|
Residual Gas Analyzer Performance Characteristics
|
Calibration of Gas-Analytic Mass Spectrometers for Gases and Vapors
|
||||
PS-ThA |
In Situ Surface Diagnostics in Plasma Processing: Present Status and Future Challenges
|
Comparison of Surface Wave Plasma with ICP used in Oxide Etching
|
An ICP Source Design with Improved Azimuthal Symmetry1
|
Characterization of 100 MHz Inductively Coupled Plasma (ICP) by Comparison with 13.56 MHz ICP
|
Multi-Frequency Operation of RIE and ICP Sources1
|
Diagnostics in a Novel Capacitively Shielded, Inductively Coupled Plasma Source
|
Volume/Surface Effects on Dissociation Processes in Ar/C4F8 Plasma
|
Investigation of the Gasphase of Expanding Ar/CxHy Plasmas
|
Electrical Control of Spatial Uniformity of Chamber-Cleaning Plasmas Investigated using Planar Laser-Induced Fluorescence
|
||
SE-ThA |
Selected Energy Epitaxial Deposition of GaN and AlN on SiC(0001) Using Seeded Supersonic Free-Jets of NH3 in Helium
|
Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams
|
The Effect of Scaling Precursor Duty Cycles on Pulsed Supersonic Molecular Beam AlN Growth Rates
|
In-Situ Surface Cleaning of GaN Using Hyperthermal Molecular Beams
|
Controlling Thin Film Morphology and Selectivity using Collimated Monoenergetic Molecular Beams
|
Three Dimensional Modeling of Silicon Deposition Process Scale-up Employing Supersonic Jets
|
|||||
SS1-ThA |
A Novel Real-time Technique for Monitoring Adatom Surface Diffusion and Island Nucleation
|
Direct Measurement of Adsorbed Si Dimer Dynamics on Si(001)
|
Ion-Induced Surface Diffusion of Ge on Si(111)
|
Schwoebel Barriers on Stepped Pt(111)1
|
Diffusion and Island Formation of Water Molecules on Ice Ih Surfaces
|
H and O promoted Self-Diffusion of Pt(110)
|
Adsorption of N on Fe(100): Diffusion and Adatom-Adatom Interactions Studied with Scanning Tunneling Microscopy
|
Novel Diffusion Channel Parallel to Steps: CO on Pt(111)
|
Potassium Surface Diffusion by Optical Techniques
|
||
SS2-ThA |
Structural and Pt Adsorption Properties of Ultrathin Al2O3(001) Films on Al(111), Mo(110), and Ru(001)1
|
Interaction and Growth of Rh on Hydroxylated Alumina Model Substrates
|
Growth of Ultrathin ß-MnO2 on TiO2(110) by Oxygen-Plasma-Assisted Molecular Beam Epitaxy
|
Ordered Cerium Oxide Thin Films Grown on Ru(0001) and Ni(111)1
|
Evolution of Surface Morphology and Growth Modes for Epitaxial alpha-Fe2O3 on alpha-Al2O3
|
The Nature, Growth and Stability of Vanadium Oxides on Pd(111)
|
Photoemission Study of Ultra-thin NiO(111) Films Grown on Au(111)
|
The Effects of High Temperature Annealing on the Surface Reconstruction of NiO(111)
|
Morphology of MgO (111) Surfaces: Artifacts Associated with the Faceting of Polar Oxide Surfaces into Neutral Surfaces
|
Surface Phonons and Surface Phase Transitions in KTaO3 (001)
|
|
TF-ThA |
Ex-situ Characterization of Polycrystalline Thin Films
|
TEM Study of Defects, Domains and Vacancy Ordering in Ga2Se3/GaAs(100) and Ga2Se3/Si(111) Thin Films
|
Sputtered Deposition of Ni3Al Thin Films
|
Roughness Measurements With X-Rays Using an Out-Of-Plane Scattering Geometry
|
Accurate Thin Film Density Measured by Energy-Dispersive X-ray Reflectivity
|
Structure and Electronic Properties of the Novel Semiconductor Alloy Cd1-xCuxTe
|
Thickness-Dependence of Infrared Reflection-Absorption Spectra from Thin Film of Anatase-type TiO2 Grown on Polished MgO(001) Substrate by Ar-ion Beam Sputtering
|
Rutherford Backscattering and Channeling Studies of Al and Mg Diffusion in Iron Oxide Thin Films
|
Advances in the Characterization of Thin (<30 nm) TiN Films Using SIMS
|