AVS1996 Session NS-WeP: Nanometer-scale Science & Technology Poster Session
Wednesday, October 16, 1996 5:00 PM in Ballroom A
Wednesday Afternoon
Time Period WeP Sessions | Topic NS Sessions | Time Periods | Topics | AVS1996 Schedule
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NS-WeP-1 AFM-based Assembly and Characterization of Lateral SET (Single-Electron Tunneling) Structures for Room Temperature Operation
L. Montelius, T. Junno, S. Carlsson, K. Deppert, L. Samuelson (Lund University, Sweden) In recent years the interest for devices based upon the properties of low-dimensional structures has increased substantially. In order to fully take advantage of the reduced dimensionality it is needed to fabricate structures having dimensions in the order of 5-10 nm. This is a big challenge and different techniques have been proposed during the last years. Many of these techniques involves some kind of self-aligning/assembly processes such as direct epitaxial growth of low-D structures or utilizing aerosol deposited dots of either metal or nanocrystals. We have recently demonstrated our ability to manipulate and controllable move aerosol clusters (and e-beam defined metal discs and other features) with nanometer precision on a surface. This kind of controlled manipulation of particles has been employed for assembling a lateral SET-structure that would allow room-temperature operation. The assembly procedure consists of moving selected metal features into an e-beam defined gap between two electrodes. The manipulation is done with in-situ monitoring by having a voltage applied to the electrodes, meaning that we will detect a current via the cluster when it has been moved into correct position between the electrodes. In this paper we will report of the assembly procedure and the electrical characteristics of such an assembled structure, both at low temperature and at room temperature. |