SIMS2015 Monday Morning
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
Session | Monday, September 14, 2015 | |||||||
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10:00 AM | 11:00 AM | 12:00 PM | ||||||
CT1-MoM |
SIMS Based Correlative Microscopy for High Resolution Multi-technique Analysis
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Bringing MALDI and SIMS Closer Together with New Ion Beams, Matrices and Sample Preparation
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Concerted Mass Spectrometry, A Proof of Principle Approach to Combining LA-ICP-MS with SIMS and TIMS for Nuclear Debris Analysis
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Beyond Defect Formation: Characterization of Structural and Electronic Modifications in Graphene due to Plasma Treatment by ToF-SIMS, XPS and Raman
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Small-Scale Signals With a Big Impact: Sub-Micron Heterogeneity in Environmental Materials and Biominerals as Imaged by SIMS and APT
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Multi-technique Evaluation of Induced Topography while Profiling Organic Samples with Low Energy Cesium Ions
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FN1-MoM |
Sputtering-ionization from Free Standing Graphene
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Quantitative Evaluation of Oxygen Enhancement of Sputtered Ion Yields in Copper, Aluminum and Silicon Single Crystals Studied using 18O Implant Calibration of Oxygen Levels
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Effect of Oxygen Chemistry in Sputtering Simulations
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Projectile Assisted Surface Chemistry: A Possible Route to Enhance Molecular Secondary Ion Yields?
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Computer Modeling of Cluster Bombardment of Organic Materials: From Small Molecules to Polymers
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Exploration of the Concept of Universality in Sputtering Yields due to Custer Bombardment
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MI1-MoM |
SIMS Isotopic Measurements of Isotopically Purified Films Deposited on Silicon
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High Depth Resolution SIMS Profiling and Topography Studies of III-V Heterostructures in 3D Architecture under Low Energy Ion Beam Sputtering
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Effect of Boron Concentration in High Purity Water on Electrical Properties of Silicon Devices
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Assessment of Accurate Analysis in Low Dimensional or Confined SiGe Structures using Low Energy Dynamic Sims Technique
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Combining Plasma Profiling ToFMS with ToF-SIMS depth profiling for microelectronic applications
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'Atomic Layer’ SIMS Depth Profiling of Epitaxial Si1-xGex Films: Quantification Aspects at Low Impact Energy
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