NAMBE2019 Tuesday Morning

Sessions | Time Periods | Topics | Schedule Overview

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Session Tuesday, September 24, 2019
8:15 AM 9:15 AM 10:15 AM
MBE-1TuM
Epitaxy: State of the Art & and Future Trends
Growth-Induced Temperature Changes During Transition Metal Nitride Epitaxy on Transparent SiC Substrates
Using the Desorption Mass Spectrometry Technique to Optimize Sb Flux in GaSbBi Growth
BBr3 as a B Source in Plasma Assisted MBE
Assessing MBE Regrowth Quality on Transfer Printed Virtual Substrates
LATE NEWS: Mechanism of Si Doping in O2 Plasma-Assisted MBE Growth of β-Ga2O3
MBE-2TuM
Development of AlAsSb Digital Alloys on GaSb and InP Substrates for Photo-Detector Applications
Structural and Optical Properties of Bulk nBn InAsSb Metamorphic Detector
All-Epitaxial Mid-Wavelength Infrared Resonant Cavity-Enhanced Photodiodes
Molecular Beam Epitaxy of Coalesced AlGaN Nanowires: Ultraviolet Transparent Electrodes for Large-Area LEDs
High Peak-current Density AlN/GaN Resonant Tunnel Diodes Grown by rf-MBE on GaN Templates
Optimized Material for Intermediate Band Solar Cells: Type-II CdTe Quantum Dots in a ZnCdSe Matrix
Sessions | Time Periods | Topics | Schedule Overview