NAMBE2019 Tuesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
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| Session | Tuesday, September 24, 2019 | ||||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | 4:30 PM | ||||||||||||
| MBE-1TuA | 
                                 
                                    MBE Young Investigator Award Winner: TBD
                                    
                                 
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                                    Band Engineering to Achieve a Wide Band Gap Topological Insulator
                                    
                                 
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                                    Van der Waal Epitaxy of Bi2Se3 on GaAs: A Morphological Playground
                                    
                                 
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                                    Growth of GeTe and Sb2Te3 Interlayer Structures for Interfacial Phase Change Devices via Molecular Beam Epitaxy
                                    
                                 
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                                    Molecular Beam Epitaxy of Hexagonal Boron Nitride on HOPG
                                    
                                 
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| MBE-2TuA | 
                                 
                                    InAs Chirped Quantum Dot Growth on Si for Broadband Spectral Gain Mode-locked Laser
                                    
                                 
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                                    InP Quantum Dots for Dislocation-tolerant, Visible Light Emitters on Si
                                    
                                 
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                                    Gallium-assisted Deoxidation for Spatially and Spectrally Controlled InAs Quantum Dot Molecules
                                    
                                 
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                                    Influence of the Growth Conditions on the Performance of InAs Sub-Monolayer Quantum Dot Infrared Photodetectors
                                    
                                 
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                                    Effect of Annealing on Structure and Luminescence of InP/AlGaInP Quantum Dots
                                    
                                 
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                                    Structural and Optical Properties of GaAs(111)A Tensile-strained Quantum Dots using As2 and As4
                                    
                                 
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                                    Comparing the Self-assembly of Tensile-strained Ge and GaAs Quantum Dots on InAlAs(111)A
                                    
                                 
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