It has been shown previously that low dielectric constant insulating layers can be deposited using a process technology known as "Low-k Flowfill". This process uses a chemical vapour deposition (CVD) reaction between methyl-silane (CH₃-SiH₃) and hydrogen peroxide (H₂O₂) to form a methyl doped silicon oxide. Layers deposited using this technique exhibit a dielectric constant < 3.0 and remain stable upon annealing at temperatures of up to 500 degrees Celsius. The layers also exhibit excellent gap-filling capabilities, being able to completely fill 0.1 micron features with up to 4 to 1 aspect ratios.

This paper considers the application of the Low-k Flowfill material as an intermetal dielectric, and examines some of the integration issues raised. Future device technologies may require dielectric constants lower than those achieved using the methyl-silane/hydrogen peroxide chemistry to date. In order to meet these requirements the possibility of enhancing the basic methyl-silane/hydrogen peroxide chemistry, to achieve dielectric constants < 2.5, is described.

We have successfully integrated a thermally insulating silica aerogel thin film into a new uncooled monolithic thin film infrared imaging device. Compared to other technologies (e.g. microbridge), use of an aerogel layer provides superior thermal isolation of the pyroelectric imaging element from the relatively massive heat sinking integrated circuit. This results in significantly higher thermal and temporal resolutions. We have calculated noise equivalent temperature differences ranging from 0.04 to 0.10 °C based on pyroelectric coefficients measured from a variety of PLZT compositions used as pyroelectric imaging elements in monolithic structures. In addition, use of aerogels results in an easier, less expensive fabrication process and a more robust device.

Fabrication of these monolithic devices entails a number of deposition processes including ambient temperature/pressure sol-gel deposition of the aerogel, sputter deposition of the electrodes, and solution chemistry deposition of the PLZT imaging elements. Uniform pyroelectric response is achieved across the device by use of appropriate planarization techniques involving the aerogel, electrode, and imaging element layers. These deposition and planarization techniques are described. In addition, characterization of the individual layers and monolithic structure using scanning electron microscopy, atomic force microscopy, thermal conductivity measurements and Byer- Roundy techniques is discussed.

Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000.

In this paper we discuss the application of DxZ+ reactor to plasma enhanced CVD processes including high temperature nitride and dual frequency delta nitride films. The DxZ+ chamber offers unique advantages over conventional DxZ chamber in terms of its high temperature processing ability and bottom power dual frequency configuration, employing an embedded RF electrode.

The high temperature nitride film is intended for PMD barrier layer and spacer applications. The DxZ+ plasma process offers unique CVD capability with wide process window, good film uniformity and low hydrogen content. Recent process developments and results from a 5000 wafer burn-in will be discussed.

Recent advances in dual frequency delta nitride process using bottom power DxZ+ will be elaborated. The bottom bias provides precise control over the ion energy, allowing independent control of process parameters for good step coverage, excellent conformality, pinhole performance and sidewall integrity.