Aluminum nitride (AlN) is a piezoelectric and wide bang gap material which crystallizes in a hexagonal wurtzite structure. This material arouses a certain interest in various fields of microelectronics, in particular radiofrequency (RF) devices ^1–3. Its deposition process is well-known and appears to be reproducible, using either epi-like chemical deposition solutions, or N₂-based physical deposition with Al-target. In particular, AlN deposited by Physical Vapor Deposition (PVD) exhibits a relatively large electromechanical coupling coefficient k_t² ≈ 6,5%. ²

Due to the lack of bulk AlN substrates and the large lattice mismatch between AlN and silicon, AlN is usually epitaxially grown on sapphire or silicon carbide (SiC) substrates at high growth temperature (≈1000 °C) to achieve higher crystalline quality and hence better device performance ^4,5. However, high cost, limited wafer size or differences in thermal expansion coefficient between AlN and these substrates drastically limit the integration and applications of AlN.

In recent years, the emergence of 2-Dimensional (2D) materials and particularly 2D-Transition Metal Dichalcogenides (2D-TMDs) seems to be a promising approach for the growth of III-nitride. Among 2D-TMDs, MoS₂ is one of the most widely studied materials due to its availability ^6,7. MoS₂ has a natural two-dimensional structure with the sandwich-like S-Mo-S layers serving as building blocks, in which the atoms in the layer are bonded with strong covalent bonding, while the layers are packed together with weak interlayer forces ^8,9. It also presents a hexagonal structure with a close lattice matching with III-nitride (1 % to 3 %) and a chemical compatibility enabling the direct growth of these materials ^4,5.

In this presentation, we will demonstrate the direct growth of c-axis textured AlN films deposited by PVD on a well-controlled and uniform MoS₂thin film elaborated by Atomic Layer Deposition (ALD). We will show how 2D materials can be advantageously implemented to improve the texturation of AlN on silicon substrate. Hence, in figure 1, the crystal quality of AlN is assessed by X-Ray Diffraction (XRD) measurements using the Rocking Curve (RC) technique. The FWMH of the omega peak at 18° (Theta 36,04° of (002)) gives a direct information on the mosaicity of the AlN layer. AlN Growth on 2D-MoS₂ seed induces a strong reduction of FWMH compared to Si-based substrate, indicating the preferential reorientation of the AlN matrix along the (002) axis, perpendicular to the substrate surface. This orientation is expected to boost the piezoelectric coefficient, which opens new field of applications on Si substrate.