Phosphors have many technological uses in applications such as solid-state lighting, optical laser, data storage, medicine, quantity control, scintillation, advertising, solar cells, theft prevention, etc. We have prepared a series of praseodymium (Pr³⁺) and dysprosium (Dy³⁺) doped mixed rare-earths oxyorthosilicate phosphors with a general formula R₂SiO₅ hosts (R = La, Gd or Y) using the solution combustion method. By varying the molar ratio of La to Y and Gd to Y, we modified the unit cells and the crystal field strengths of the host lattices. This modification of the crystal field of the host lattice can lead to the shifting of the emission wavelengths, increase of the rate of radiative transitions, and minimization of energy loss by non-radiative transitions. We evaluated the crystal structure and photoluminescence properties of Pr³⁺/Dy³⁺ doped R₂SiO₅ (R = La, Gd or Y) in powder and laser ablation deposited thin film forms. We varied several deposition parameters including partial pressure of gas (O₂ and Ar), type of laser pulse, and substrate temperature using the 1064 nm Nd:YAG solid state laser. The effects of varying the La to Y/Gd ratios on the field strengths of the host lattices and the influence of the various deposition conditions on the emission colour and photoluminescent intensities will be discussed.

We report on highly transparent conductive electrodes based on copper (Cu)-mesh structures combined with conductive polymer films. The hybrid transparent electrodes show outstanding optical and electrical properties (transmittance of 81.7 % at a wavelength of 550 nm, sheet resistance of 100.7 ohm/sq). The effective current collecting property of metal mesh structures as well as the excellent current spreading property of the conducting polymer enables the high performance of the hybrid transparent electrodes. Organic light-emitting diodes (OLEDs) employing the hybrid transparent electrodes results in 2.0-fold enhanced current and power efficiencies, compared to the control polymer electrode-based OLED without current collecting metal mesh structures. The results present that Cu-mesh structures combined with conductive polymer films can be a promising transparent conductive electrode for highly efficient low-cost, flexible indium tin oxide-free OLEDs.

The IrO₂/Pt films were prepared on Si substrate by pulsed-dc magnetron sputtering and plasma-enhanced atomic layer deposition (PEALD), respectively. The IrO₂ film was prepared from a high purity Ir target and deposited on Si substrate at room temperature with various working pressure, gas ratio (Ar/O₂ ratio) and pulse frequencies (10~100 kHz) by a pulsed-dc magnetron sputtering. Effects of process parameters on the film composition, microstructure, surface roughness, and electrical properties were investigated by field emission scanning electron microscopy with energy dispersive X-ray spectroscopy (FESEM-EDX), X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and cyclic voltammetry (CV) measurement, respectively. The nanoblade structure of the IrO₂ film was prepared at a working pressure was 20 × 10⁻³ Torr, and Ar/O₂ rate was 10. The Pt film was prepared on the nanoblade structure of IrO₂ film by PEALD. Effects of plasma power, and thickness on the microstructure, and electrical properties of the IrO₂/Pt films were investigated. The research goal is to obtain high charge delivery capacity (CDC) of the film. It is expected that the high quality IrO₂/Pt film can be explicated in biomedical technology.

Stacked MoO₃/Ag/Mo/MoO₃ (MAMM) films were deposited on glass substrate as ITO-free and electrochromic applications. The effects of the thickness of Mo layer on the electrical and optical properties of the MAMM films were examined by the four-point probe system and a spectrophotometer. The resistivity of MAMM films was decreased with increasing the thickness of Mo layer. The resistivity of the films were 5000 and 3X10^-5 Ω/cm when the thickness of Mo layer was 1 and 2 nm, respectability. It was found that the ITO-free MAMM film as the Mo layer is over 2 nm. The luminous transmittance of MAMM films was decreased with increased the thickness of Mo layer. After the optical simulated, and prepared the electrochromic MAMM films, the MAMM films for hot-mirror and electrocromic applications was also investigated.

The present work presents the development of a thin film based on ferric hydroxide (Fe(OH)₃) dispersed in a polymer matrix of polyvinyl acetate (PVA) containing ethylenediamine (H₂N-(CH₂)₂-NH₂) to form a membrane phosphate in solution. Ferric hydroxide was obtained from the stoichiometric reaction of iron (FeCl₃) perchloride with ammonium hydroxide (NH₄OH), and after washing, filtration and drying the Fe(OH)₃ was diluted with ethyl alcohol to add to ethylenediamine doped PVA. The thin film for the formation of the membrane was obtained by the spin-coating method. For the selectivity tests, the membrane was applied in a semiconductor insulating electrolyte (EIS) device to be used as hydrogen phosphate sensor. The EIS device is formed by the selective membrane deposited on a structure composed of a thin layer of silicon oxide on the silicon substrate, and a gold-plated tungsten micro tip as the reference electrode. The thin film composing the selective membrane was characterized structurally by elliptiometry, Raman spectroscopy, X-ray diffraction, and atomic force microscopy (AFM). In order to evaluate the selectivity of the thin film of the membrane, the electrical characterization of the EIS device was carried out, obtaining the voltage capacitance curves for the pH variation and for the variation of the hydrogen phosphate concentration in solution, which showed a result in the sensitivity of 143 mV/pH and sensibility in the measurement of the hydrogen phosphate concentration of 42 mV/mg/dL.

Keywords— ferric hydroxide; hydrogen phosphate; thin films; selective membrane

In_1-xGa_xAs has been considered to be one of the promising candidates for future n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) [1]. However, due to its poor interface quality with the high-k gate dielectrics (e.g., high interface state density, D_it), Al₂O₃ has been used preferably as an interface passivation layer under the HfO₂ gate dielectric with a higher k value [2-5]. Most recently, Choi et al. [6] reported that low-temperature atomic layer deposition (ALD) of a HfO₂ (4 nm)/Al₂O₃ (1 nm) stacked structure at 100 °C was effective in reducing both D_it and leakage current density. However, because they used an identical ALD temperature for both HfO₂ and Al₂O₃ layers, the capacitance equivalent thickness (CET) of the HfO₂/Al₂O₃ gate dielectric stack was significantly increased [6].

In this presentation, we will introduce a dual-temperature ALD process for the HfO₂/Al₂O₃ stacked gate dielectric to decrease the CET values while maintaining low D_it and leakage current density values. While the ALD temperature for the Al₂O₃ passivation layer (~1 nm) on a n-type In_0.53Ga_0.47As substrate was fixed at 100 °C, the following ALD temperature for the HfO₂ layer (~4 nm) was varied from 100 to 300 °C to decrease the CET values. After the fabrication of MOS capacitors with a stacked gate dielectric structure, the effects of the ALD temperature for the overlaid HfO₂ film on various electrical parameters and characteristics, such as CET, D_it, bulk trap density, and static/dynamic leakage currents, were studied.

[1] Shinichi Takagi, Rui Zhang, Junkyo Suh, Sang-Hyeon Kim, Masafumi Yokoyama, Koichi Nishi, and Mitsuru Takenaka, 2015, 545, 06FA01.

[2] A. O’Mahony, S. Monaghan, R. Chiodo, I.M. Povey, K. Cherkaoui, R. E. Nagle, É. O’Connor, R. D. Long, V. Djara, D. O’Connell, F. Crupi, M. E. Pemble, and P. K. Hurley, 2010, 33, 69.

[3] S. Monaghan, A. O’Mahony, K. Cherkaoui, É. O’Connor, I. M. Povey, M. G. Nolan, D. O’Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, and S. B. Newcomb, J. Vac. Sci. Techno. B, 2011, 29, 01A807.

[4] R. Suzuki, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, Appl. Phys. Lett., 2012, 100, 132906.

[5] K. Ohsawa, S. Netsu, N. Kise, S. Noguchi, and Y. Miyamoto, Jpn. J. Appl. Phys., 2017, 56, 04CG05.

[6] S. Choi, J. Song, Y. An, C. Lee, and H. Kim, J. Korean Phys. Soc., 2018, 72, 283.

Fabrication of device interconnects in the high aspect ratio features of modern electronics requires highly conformal, electrically conductive films. HfB₂ is a metallic ceramic which can be deposited with excellent conformality at low temperatures using the single-source CVD precursor Hf(BH₄)₄; conformality is due to the kinetic saturation of growth rate at precursor pressures of a few mTorr. Here we report the conformal growth of Hf_1-xV_xB₂ alloys by adding a co-flow of the vanadium precursor V[N(CH₃)₂]₄. This alloy is of special interest for its reported superconducting transition near 7 K.

We report a CVD process to deposit titanium-doped polycrystalline MgB₂ films at low temperatures (≤ 400 °C) using Mg (DMADB)₂, a highly volatile Mg precursor. The low growth temperature assures that the film does not lose Mg by evaporation, which occurs above 400 °C. When used alone, however, this precursor requires higher temperatures in order to react (it is slightly too stable chemically). We show that CVD proceeds at temperatures as low as 300 °C upon addition of the analogous Ti precursor, Ti(DMADB)₂. We identify Ti(DMADB)₂ as a catalyst because each Ti molecule drives the decomposition of up to 4 Mg(DMADB)₂ molecules. With a high precursor to catalyst pressure ratio, the films are stoichiometric (metal : boron = 1 : 2), and the concentration of oxygen, carbon, and nitrogen is each below the detection limit of ~ 1 at. %. For a film grown at 350 °C, the stoichiometry determined by RBS is Mg_0.82Ti_0.18B₂; it is well crystallized; and the room temperature resistivity is a few hundred µΩ·cm. Literature reports suggest the possibility of superconductivity at T = 10-33 K depending on the doping levels of Ti.

Plasma-enhanced chemical vapor deposition (PECVD) is a routinely employed process in thin-film technologies. Despite its array of advantages and affordability, it suffers from the lack of systematic principles to define growth conditions for an intended output. A deeper understanding of plasma processes is necessary for rational design and strategic synthesis of robust materials spanning a broad spectrum of applications. The properties of these materials are highly dependent on structure; and the structure varies as a function of growth conditions. Interpreting or predicting the effects of PECVD process variables such as temperature, pressure, flow rate and plasma power density on structural features of thin-films is a formidable task. The traditional ‘cook and quench’ molecular dynamics approach is incapable of replicating the relatively longer time scales and non-thermodynamic nature of the actual experiment. An alternative approach entails advanced machine learning algorithms applied not to reproduce, but rather to map the process-structure-property correlations. However, this requires training data in the form of empirically determined chemical models obtained under known process conditions. Here, PECVD grown amorphous hydrogenated SiCN thin films obtained from structurally different molecular precursors are studied to compile such a data set due to their stability, scope for precursor synthesis, and compatibility with various characterization techniques: FT-IR, solid-state NMR, fluctuation electron microscopy (FEM), as well as X-ray and neutron diffraction. We present the effects of process parameters on a-SiCN:H thin films, extensive structure and property characterization, and propose chemical structure models.

Hafnium dioxide (HfO₂) and zirconium oxide (ZrO₂) have been used widely as the gate oxide in the fabrication of integrated circuits (ICs) because of their high dielectric constants. In this research, we report the growth of hafnium dioxide (HfO₂) and zirconium oxide (ZrO₂) thin film using plasma-enhanced atomic layer deposition (PEALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the PEALD-grown HfO and ZrO thin films as the gate oxide. The PE-ALD-grown films were analyzed using high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). MOSFETs, CMOS inverters, and CMOS ring oscillator were fabricated, and the electrical properties of the fabricated devices were measured. The measurement results on the devices fabricated with the two films were compared.

In this research, we report the growth of nanoscale multilayered thermoelectric thin films and fabrication of integrated thermoelectric devices for high-efficiency energy conversion and solid-state cooling. Nanoscale multilayered thin films such as Sb/Sb₂Te₃ and Te/Bi₂Te₃ thin films were grown using the e-beam evaporation. Integrated thermoelectric devices were fabricated with the nanoscale multilayered thin films using the clean room-based microfabrication techniques such as UV lithography. X-ray diffraction and reflection and high-resolution tunneling electron micrograph (HR-TEM) were used to analyzed the e-beam-grown nanoscale multilayered thin films. SEM was used to image and analyze the fabricated devices. The thermoelectric characteristics of the fabricated devices were measured and analyzed.

This study investigates effect of substrate temperature on the phase and microstructural evolution of 316L stainless steel thin film. The 316L SS thin film were prepared on a Si (100) substrate by using dc magnetron sputtering in an argon atmosphere. The substrate temperature was increased from 293 K to 673 K. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), focused ion beam (FIB), and transmission electron microscopy (TEM) and were used to investigate the phases and microstructure of the thin films. The phase and microstructural analysis reveal that films deposited at room temperature showed amorphous or disordered structure. The disordered structure was attributed to the insufficient thermal activation energy for atom mobility during low temperature deposition. By increasing the substrate temperature the thin film become crystalline and the grain size increased with the temperature.

Fluorine-doped SiO₂ films were deposited by magnetron sputtering with a Si metal target at room temperature. In order to obtain better optical and mechanical properties, films were investigated under different ratios of O₂ to CF₄ gas. The optical properties, microstructure, surface roughness, and crystalline structure, of fluorine-doped SiO₂ films have been studied. The transmittance increased as increasing the CF₄ gas in the ultraviolet range. The refractive index decreased as increasing the CF₄ gas.

ZnGeN₂ is a wide bandgap material having less than 0.1% lattice mismatch and similar bandgap as GaN [1]. Based on first principles calculations, the valence band maximum of ZnGeN₂ is ~1.4 eV above that of GaN at the heterointerface [2]. Such a staggered band alignment between two closely lattice-matched materials has promising applications for novel optoelectronic device designs, for example, high efficiency blue and green light emitting diodes [3]. However, the thin film synthesis of ZnGeN₂ is still at an early stage, in contrast to the mature GaN.

Here, we study the growth of ZnGeN₂ thin films using metalorganic chemical vapor deposition (MOCVD) and characterization of the crystalline, optical, and electrical properties. Diethylzinc (DEZn), germane (GeH₄) and ammonia were used as the precursors for Zn, Ge and N, respectively, and GaN templates and sapphire were used as substrates. The Zn/Ge atomic ratios in ZnGeN₂ were determined from energy dispersive X-ray spectroscopy. They were found to decrease with increase in growth temperature (from 600 to 700 °C) but to increase with increase in pressure (from 300 to 500 Torr) and DEZn/GeH₄ molar flow rate ratio. The X-ray diffraction 2θ-ω spectra of the ZnGeN₂ films are consistent with orthorhombic (perfectly ordered cations) or distorted wurtzite (disordered cations) polymorphs. High resolution scanning transmission electron microscopy imaging was used to investigate the crystalline quality and crystalline structure of the films. The ZnGeN₂ films grown on c-sapphire and GaN substrates have planar surfaces from scanning electron micrographs while those on r-sapphire substrate have stepped surface morphologies. A broad peak at ~2.05 eV was observed from room temperature photoluminescence (PL) spectra and is was attributed to transitions involving deep level defects. The PL excitation spectra peaked around 3.4 eV, and is attributed to excitonic enhancement of the absorption near the band gap. The as-grown films were found to be n-type with 10¹⁸ -10¹⁹ cm^-3 carrier concentrations and room temperature mobilities up to 17 cm²/V·s.

In summary, the studies from this work on the MOCVD growth of ZnGeN₂ thin films are a step towards the better understanding of this material and thus, towards the implementation of ZnGeN₂ for device applications.

Acknowledgements

The authors acknowledge funding support from the National Science Foundation (DMREF-1533957).

References

1. A. Punya, T. R. Paudel, and W. R. L. Lambrecht, Phys. Status Solidi C, 8, 2492 (2011).

2. A. P. Jaroenjittichai, S. Lyu, and W. R. L. Lambrecht, Phys. Rev. B., 96, 079907(E) (2017).

3. L. Han, K. Kash, and H. Zhao, J. Appl. Phys., 120, 103102 (2016).

Ionic liquids (ILs) have been investigated extensively due to its unique ability to form the electric double layer (EDL) which induces high electrical field. For certain materials low temperature IL charging is needed to limit the electrochemical etching. Here we report our investigation of the low temperature charging dynamics in two widely used ILs – DEME-TF₂N and C₄mim-TF₂N. Results show that the formation of the EDL at ~220 K requires several hours relative to milliseconds at room temperature, and an equivalent voltage V_e is introduced as a measure of the EDL formation during the biasing process. The experimental observation is supported by molecular dynamic simulation, which shows that the dynamics are logically a function of gate voltage, time and temperature. To demonstrate the importance of understanding the charging dynamics, a 140 nm thick FeSe_0.5Te_0.5 film was biased using the DEME IL, showing a tunable Tc between 18 and 35 K. Notably, this is the first observation of the tunability of the T_c in thick film FeSe_0.5Te_0.5 superconductors.

Magnetics, optoelectronics, energy storage and renewables, catalysis and nanoelectronics, semiconductors, new graphene-type materials and their surface are under intensive investigation of many research groups [1-3]. The wide variety of novel technologies and materials available, precise, well defined scientific problems or proprietary production recipes demand customized analysis and deposition systems.

Innovative and compact PREVAC surface analysis platform as part of multi-technique surface analysis system will be presented, in order to permit complete characterization of nanomaterials in the UHV and ambient pressure conditions. We will report some results from these systems.

Also we introduced PREVAC deposition platforms, based on well tested MBE system technology, offering a high quality and stable UHV performance. Compact construction allows the connection of different deposition sources at versatile configurations as well as the incorporation of RHEED, inventive alternative GIFAD [4] and other analysis techniques.

As the next deposition platform the sputtering systems for depositing metal and dielectric thin films on substrates at the different temperature will be shown. A range of magnetron sputtering sources, using RF, DC, or pulsed DC power, can be operated in the multimode by SYNTHESIUM software for producing thin films.

Finally we describe PREVAC’s PLD systems. Typically it is used with a focused pulsed excimer laser to vaporize a small section of a solid target material in a vacuum chamber in order to produce thin-films. Standalone configuration or as part of a larger integrated research system, system is fully automated. The transfer system features a six position target manipulator which allows transfer of both target and substrate holders for simple and efficient operation.

References:

1. L. K. Preethi, et al., Sci. Rep. , 14314 (2017)

2. M. Weis, et al., Sci. Rep. 7, 13782 (2017)

3. N. M. Freitag et al., Nature Nanotechn. 13, 392-397 (2018)

4. A. Momeni et al. J. Phys. Chem. Lett., 9, 908–913 (2018)

Surface site-limited reaction is critical to modifying hybrid halide perovskites without destroying their bulk properties. However, no surface site-limited reaction on hybrid halide perovskites has been demonstrated and confirmed. Herein, we report one surface-site limited reaction on FA lead iodide with tri-methyl aluminum. The strong coordination between organic cations FA⁺and trimethyl aluminum, a very strong Lewis acid, is found to be the key for this self-limited reaction behavior. Our results provide a model system to understand the effect of surface species on surface reaction behavior on hybrid halide perovskites.

Indium oxide (In₂O₃)-based thin-film transistor (TFT) have attractive much attention because high field-effect mobility (> 10 cm²/Vs) can be obtained even room temperature deposition. However, a high-temperature post-annealing is necessary for typical fabrication processes. This sacrifices the merit of In₂O₃-based TFTs that can be fabricated at low temperature. One reason for high-temperature treatment is that an In₂O₃ surface might be sensitive to ambient gases, thus, the electrical properties of the film is changed in various environmental conditions. In order to clarify such instability, we investigate the electrical properties of In₂O₃ TFT in ambient, vacuum and N₂ environments.

The In₂O₃ TFT was fabricated on a Si substrate with a thermally-grown oxide layer (SiO₂ thickness: 200 nm). Before deposition of In₂O₃ active channels, the substrate was ultrasonically cleaned in acetone and isopropyl alcohol, and was irradiated by an excimer lamp (wavelength: 172 nm) for 5 min to remove the organic residue. The In₂O₃ film was then deposited at room temperature by RF magnetron sputtering. The O₂/(Ar + O₂) ratio, RF power and total pressure during sputtering deposition were fixed at 25 %, 100 W and 0.24 Pa, respectively. The background pressure was below ~5 × 10⁻⁴ Pa. The thickness of the active channel formed through a stencil shadow mask was 20 nm by optimizing the deposition time. Source and drain electrodes (Cu: 100 nm) were then formed by an electron beam evaporation through a stencil shadow mask. The In₂O₃ TFT was characterized in a vacuum probe station with a semiconductor parameter analyzer (Agilent 4156A) at room temperature in the dark condition. The electrical measurement of the TFTs was performed in ambient at first, then the chamber was evacuated to ~4 × 10^‒2 Pa for vacuum measurement. A N₂ gas was subsequently introduced into the chamber to be N₂ environmental condition.

The In₂O₃ TFT properties were drastically changed between ambient and vacuum conditions. This might be caused by desorption of excess oxygen in the film. To investigate a measurement environmental sensitivity in In₂O₃ TFT, a sequential I-V measurement was performed. The result showed that the transfer characteristics between 1st and 2nd measurement is obviously different. The degradation of the sensitivity after the 2nd measurement might be due to N₂ molecule passivation. However, the sensitivity tended to slight recover with increasing the number of measurements. We will discuss the N₂ passivation effect, and the relationship between the sensitivity and number of measurements.

As one of the most promising energy storage devices, supercapacitors have been widely adopted in different fields due to their high power density and long service life. However, with the rapid development of intelligent electronic products, there is an urgent need to construct multifunctional supercapacitors to broaden the range of applications. Integration of electrochromism into supercapacitors is one of the innovative approaches to achieve device multifunctionality. An electrochromic supercapacitor can change color reversibly in response to different applied voltages. The instant capacity of the devices can be simply recognized by naked eyes. Implementation of electrochromism to supercapacitors can also prevent device overcharging, leading to a longer device lifetime. Nevertheless, the performance of previously reported electrochromic supercapacitor devices suffers from a slow switch mechanism as well as a low power density, which highlights the need for the electrode structures optimization.

In this report,an electrochromic asymmetrical supercapacitor device (EASD) is developed, which successfully achieves the multifunctional combination of electrochromism and energy storage by adopting polyaniline and tungsten trioxide as the positive and negative electrodes, respectively. In order to improve the device performance, a facile electrochemical activation process is applied to the electrode. The optimized EASD shows a high volumetric energy density of 35.3 mWh/cm³ at a high power density of 1.02 W/cm³ with excellent cycling stability. More importantly, it exhibits a high coloration efficiency of 123.4 cm²/C with an ultra-fast switching speed of 1.4 s / 0.4 s for colored / bleached states, which is one of the fastest switching devices reported so far. Such an EASD shows great potential in the applications of smart windows, smart electronics, and intelligent energy storage.

There is a constant search for more efficient materials for use in electronics. Zinc Oxide (ZnO) is a well-known semiconductor used in numerous applications. However, the effects of doping ZnO with chromium (Cr) are less documented. Using spray pyrolysis – a robust and industrially relevant technique – an aqueous solution of Zn and Cr nitrates is sprayed onto a heated substrate to create thin films of polycrystalline (Zn_1‑xCr_x)O with various Cr concentrations below x = 0.05.

Improved fabrication of poly(vinylindene fluoride)-hexafluropropylene (PVDF-HFP) thin films is of particular interest due to the high electric coercivity found in the beta-phase structure of the thin film. For example, ongoing studies of ferroelectric-spin crossover coupling using x-ray spectroscopy imply the ferroelectric-spin coupling would benefit from a better ferroelectric response. Langmuir-Blodgett (LB) deposition and Langmuir-Schaffer (LS) deposition methods create a beta-phase dominant PVDF-HFP thin film when the deposition is followed by annealing. However, applications for PVDF-HFP thin films exist in organic spintronic devices where annealing is prohibited by other materials in the device heterostructure. We show that it is possible to obtain high-quality, beta-phase dominant PVDF-HFP thin films using a modified approach to LB deposition and without the use of annealing or additives. Samples implement a unique step design with a bottom electrode of copper and aluminum and a top electrode of gold or aluminum. This design allows a single thin film sample to be characterized using scanning electron microscopy, atomic force microscopy, X-ray diffraction, and electrical hysteresis measurements.

In this work we propose to employ atomic layer deposition (ALD) grown thin films of Ti_xSi_yN_z as a universal heating electrode for integrated electronic devices. In this work the Ti:Si ratio and film thickness were varied, and corresponding structural and physical analysis was performed using multiple characterization techniques. By varying the Si fraction in the film, wide range of resistivity was achieved. Atomic level control of Ti:Si fraction in the films enabled fine tuning of the morphology from polycrystalline to fully amorphous with optimum resistivity. The Ti_xSi_yN_z films were grown using Eugenus 300 mm QXP commercial mini-batch ALD reactor. X-Ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED) of these films corroborated transition from nano-crystalline to pure amorphous phase with increase in Si concentration. Ti_xSi_yN_z films processed in our labs have already exhibited superior diffusion barrier properties and stability of the resistivity of the films. Our recent work on the in-situ high temperature XRD studies of the Ti_xSi_yN_z films showed superior phase stability of the Ti_xSi_yN_z films at high temperatures of 800°C with negligible alteration in recrystallization (Figure 1). Nanoindention based hardness studies of these films indicated the change in mechanical properties with varying Si% in the TiN matrix. The sub-nanometer level of surface roughness of these Ti_xSi_yN_z films as established by Atomic Force Microscopy would also benefit adhesion of our Ti_xSi_yN_z films with other electronic materials yielding coherent interfaces.