Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide on (111) p‑type silicon wafers within a versatile high vacuum laser deposition system. Pressure, target temperature and distance from the target to the substrate can be adjusted in the system. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction spectroscopy and ellipsometry had been used to analyze the structures and properties of ZnO thin film products.

Nowadays, the efficient use of renewable energies, and more specifically of solar energy, represents a major economic and environmental issue. Among the potential solutions, the Dye Sensitive Solar Cells (DSSC) present many advantages. In order to improve the efficiency of DSSC, TiO₂ nanoparticles, which are usually used as photo-anode, could be replaced by nanostructured TiO₂ thin films. Indeed, a photo-anode of ordered porous nano-columnar TiO₂ would provide large surface area for dye absorption, fast electron transfer path, enhanced light trapping, and tight interfaces to conducting electrodes and contributes to a high fill factor and an overall higher cell efficiency. In view of this application, the anatase phase of TiO₂ is usually the preferred polymorph as electron acceptors in DSSCs even if a synergistic effect exists between anatase and rutile with an optimal rutile content of around 13 wt%.

In this work, nanostructured and crystallized TiO₂ thin films are synthesized by reactive magnetron sputtering combined with Glancing Angle Deposition (GLAD). The substrate temperature, the substrate bias voltage and the rotation speed were varied in order to determine the best experimental conditions leading to (nano-)porous films with anatase TiO₂ columns. The chemical composition, the crystalline structure and the microstructure of the films were analyzed by XPS, XRD, SEM and TEM, respectively while the surface area is evaluated by the BET method.

It is demonstrated that many type of microstructures (tilted columns, straight pillars, chevrons,…) are obtained by combining the GLAD parameters and the sputtering conditions. On the other hand, depending on these growth conditions, the phase constitution can be tuned from amorphous to pure rutile or anatase phases including mixtures of both polymorphs. The surface area of the synthesized layer strongly depends on the experimental conditions and on the associated microstructure. The highest obtained value is of ~ 140 m²/g for a tilted columnar amorphous/anatase sample which is significantly better than the values reported for TiO₂ nanoparticules systems (~ 60 m²/g). On the other hand, a clear correlation between the surface area and the dye absorption is demonstrated revealing a good impregnation of the layer. It is also demonstrated that this impregnation behaviour is depending on the size of the dye molecule revealing different populations of pores as a function of their size. This is supported by TEM and modelling data using NASCAM, a 2D-3D Kinetic Monte Carlo code for the simulation of deposition, diffusion, nucleation and growth of films on a surface.

GaAs and related III-V sphalerite materials offer a wide array of tunable characteristics that lend themselves to many advanced device technologies. However, the cost of GaAs substrates limits their use, specially for photovoltaics. Separating epitaxially-grown layers from a growth substrate can reduce costs, however the current approach, which uses an acid to laterally etch an epitaxial sacrificial layer, is slow and can damage other device layers. Here, we demonstrate laser lift-off as a new approach that is orders of magnitude faster, and that enables more freedom in the selection of other device layers. We grow a structure with a spatially-tuned optical absorption coefficient by growing a small-band-gap, pseudomorphic layer between the GaAs substrate and a GaAs film and device structure. By using InGaAsN with a band gap of 0.9 eV for this layer, we achieve high absorption of 1064 nm (1.17 eV) light from a Nd:YAG nanosecond laser pulse, while GaAs is essentially transparent for this wavelength. Illumination through the back of the GaAs substrate with laser fluences of about 0.7 J/cm² achieves transfer of the GaAs layer to a flexible polymer substrate. Transmission electron microscopy and x-ray diffraction show that the initial InGaAsN layer is coherently strained to match the GaAs substrate, and that the GaAs film is strain-free and free of dislocations, both before and after lift-off. Thermal modeling shows only modest heating outside of the InGaAsN layer, so that the film or device above the InGaAsN layer experiences minimum thermal exposure. Examination of the lift-off interfaces shows evidence of melting and re-solidification. We demonstrate a process using additional InGaP etch layers that allow for quick and easy clean-up of this melted region, resulting in restoration of the original GaAs wafer surface to a condition suitable for re-use. Thus our process can transform the GaAs substrate from a consumable to a manufacturing tool. Device performance and material properties of lifted-off devices will be reported.

In this work, the metal - metal oxide composite films were prepared in multilayer stacks. A medium layer of silver or a mixture of silver and oxide (SiO₂, Al₂O₃, ZnO and ITO) was embedded between the host (SiO₂, Al₂O₃, ZnO and ITO) materials. The mixture of silver and oxide was deposited by co-sputtering the silver target and one oxide target in pure argon simultaneously using DC and pulse DC magnetron sputtering techniques. The optical constant of composite films was tailored by varying deposition time of the medium layer, deposition conditions and host material. The absorbing spectral peaks were influenced by silver content, silver particle sizes and oxide matrix. The in situ spectroscopic ellipsometry data was performed in real time during film growth to derive film thickness and optical constants. The dispersion results were further correlated with absorption spectra, film density, grain sizes and surface morphology by UV-Vis-NIR spectra, X-ray diffraction, X-ray reflectivity and scanning electron microscope measurements.