Understanding interfacial phenomena has been one of the main research issues not only in semiconductors but only in life sciences. I have been trying to meet the atomic scale surface and interface analysis challenges from semiconductor industries and furthermore to extend the application scope to biomedical areas. Optical imaing has been most widely and successfully used for biomedical imaging but complementary mass spectrometric imaging can provide more detailed molecular specific information

In this presentation, I report our recent activities of multimodal nanobio imaging of cardiovascular cells and tissues. Firstly, in atherosclerotic plaque imaging using coherent anti-stokes raman scattering (CARS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS), multimodal CARS & SIMS analysis showed that increased cholesterol palmitate may contribute to the formation of a necrotic core by increasing cell death. Secondly, surface plasmon resonance imaging ellipsometry (SPRIE) was developed for cell biointerface imaging of cell adhesion, migration, and infiltration dynamics for HUVEC, CASMC, and T cells. SPRIE images were validated with confocal fluorescence microscopy. Collagen fibrils are widely used as cell adhesion substrates. Changes of surface composition and elastic modulus of collagen fibrils after thermal and acidic treatment were investigated by TOF-SIMS and non-contact force microscopy. Multimodal SPRIE & TOF-SIMS imaging would be a useful methodology for understanding cell-substrate interactions in tissue engineering.

In conclusions, multimodal optical and mass spectrometric imaging privides overall structural and morphological information with complementary molecular specific information, which can be a useful methodology for biomedical studies. Future challenges in optical and mass spectrometric imaging for new biomedical applications will be discussed regarding to in-vivo imaging.

Spectroscopic ellipsometry (SE) is a powerful tool for studying thin films, including the thickness and dielectric function, the latter being closely related to important properties such as composition, phase, grain size, porosity, and stress. The sub-nanometer sensitivity of SE is best exploited if all interfaces between layers, at substrate/layer and layer/ambient are abrupt and smooth. Even for the simple structure of substrate/film/ambient, however, whereby the film is fabricated in a uniform process, surface non-idealities including roughness, oxides, compositional variations, or a combination of these, are inevitable. If an accurate film dielectric function is of interest, then the widely-used effective medium approximation (EMA) treatment of the surface roughness can distort the result, especially in photon energy range of strong absorption.

In this work, an improved SE methodology has been developed, tested, and applied to study thin films with significant surface non-idealities. The investigated materials include Cu(InGa)Se₂, Zn(O,S), Cu₂ZnSnS₄, and Cu₂SnS₃ deposited on transparent substrates by co-evaporation, sputtering, or chemical bath deposition. The film thicknesses in this study range from ~ 20 to 4000 nm, with potential applicability of the methodology over an even wider range. The key component of the SE methodology is integration of through-the-substrate (TS) SE with standard film-side (FS) SE. The following successes have been demonstrated.

(1) When the surface non-ideality is predominantly roughness within the EMA applicability, two-side (FS+TS) SE can minimize dielectric function distortion caused by the EMA assumptions.

(2) When the surface non-ideality is outside the EMA applicability and traditional SE methodology becomes unreliable, accurate results can be obtained using the FS+TS SE methodology, in which the dielectric functions of the surface and bulk layers can be allowed to vary wavelength by wavelength independently. Most thin films of this study fall into this category.

(3) When the surface is macroscopically rough and scatters light, films can be grown intentionally thick and hence rough enough to suppress specular reflection from the surface. In this case, through-the-substrate SE alone can be used to extract the bulk film dielectric function.

An important criterion for evaluating SE analysis on semiconductor films is that the ε₂ spectrum should be flat and essentially zero below the band gap. It is demonstrated that the dielectric functions obtained through the above SE methodology either satisfy or better satisfy this criterion compared to previous studies. The limitations of the SE methodology will also be discussed.

A finite spectral resolution and/or an imperfectly collimated beam /and or an (areal) extended light source / and or an (areal) extended detector and/ or a sample with a varying thickness can produce depolarization effects. However, despite these experimental findings, there are to our knowledge no physical models published which trace the origin of depolarization back to the atomic properties. Therefore, we explain depolarization by the following steps:

1) A mathematical model for cross- polarization: In structured samples the Fresnel reflectances are not correct any more, they rely on homogheneity (i.e. an arbitrary shift of the sample along any surface direction). Mathematicians are aware of this and the numerical tools developed by them, e.g. finite element methods (FEM) or rigorous coupled wave analysis (RCWA), take these effects into account, when matching boundary conditions. Mathematically the Jones matrix then possesses nondiagonal elements. This cross polarization signifies the presence of a totally polarized photon state, but takes into account that p- polarized incoming light creates s- polarized outgoing and vice versa.

2) Cross- polarization then has to take into account radiating dipoles, whose radiation create the scattered cross (and later, after incoherent superposition, partially de-) polarized field. In any structured sample there are inner boundaries present and it is straightforward to show that the usual boundary conditions on the continuity of the tangential electric field and the normal of the displacement field yield inherent contradictions at these inner boundaries. In order to fulfill the boundary conditions, close to the inner boundaries evanescent fields must be present, which drive the atomic dipoles in other spatial directions than the incoming field.

3) Depolarization: The end point of the field of unpolarized light may be assumed to move quite irregularly, and the light shows no preferential directional properties when resolved in arbitrary orthogonal directions normal to the direction of propagation. Depolarization is mathematically described by the correlation which exists between these two orthogonal directions. Furthermore the extension of the light source, the extension of the detector and the extension of the illuminated sample area (especially its depth!) are reducing the value above. The measured intensity at the detector is obtained by the incoherent superposition of the single waves. The mathematical formulation is given by the Cittert- Zernike theorem (M. Born & E. Wolf, Principles of Optics, chapter X.9).

Slanted columnar thin films based upon SiO₂ were deposited on glass substrates through the use of glancing angle deposition (GLAD). The typical length of these structures was between 500 nm and 2.5 µm. These thin films were then evaluated for use in ultra-thin layer chromatography (UTLC), which is a special type of thin layer chromatography (TLC) that uses supports that incorporate nanomaterials. In this work, a series of lipophilic dyes were analyzed through the use of both TLC and UTLC followed by detection through imaging ellipsometry. It has previously been demonstrated that changes in birefringence is seen as small organic molecules attach to some of the types of nanostructures that were used in this study. The principle behind the detection of organic chemicals that attach/adsorb onto such nanostructures is based on the variation of the optical anisotropy of highly-ordered 3D nanostructures with attached or adsorbed molecules. This causes screening of the dielectric displacement charges that are produced by the incident electromagnetic fields within the nanostructures, which can be measured as a variation of the effective birefringence of the highly-ordered 3D nanostructures. Measurement of this birefringence was done through generalized imaging ellipsometry. This combined imaging and separation approach should be useful for label-free detection in UTLC and for the chromatographic analysis of a various target compounds.