AES is a surface sensitive technique capable of detecting nearly all elements. The Probe has detected low-Z elements like Li, figure 2, as well as high-Z elements like Dy [2], figure 3, during real time deposition of the respective element.

The Probe has been implemented in a wide variety of growths environments, from more traditional MBE III-V growths, to III-Nitrides and Oxides, figure 4, as-well-as metal alloy growths.

The Probe has proven reliable in all the tested growth environments, including systems with Li, O, Cl, Ga, As, and Sb. It has not failed in any tested growth environment after hundred of hours of exposure during growth. It has not been shown to interfere with any growth process that it has been operated.

The Probe is easy to operate, requiring simplified alignment when compared to traditional AES. Coupled with automated data acquisition software, it is easy to implement in real time growth monitoring.

The Probe has been used to detect and identify several contaminants in growth environments including. C, O, and Cl. It has also been used to monitor the oxide removal from substrates prior to growth.

The Probe has been used to monitor the growing surfaces in all of the previously mentioned growth environments. This real time monitoring of growing films allows the user to construct an AES growth profile of the grown film.

The Probe provides real time N(E) auger spectra enabling quantification of the Auger data. This allows the user to track the elemental concentration throughout the growth.

The Probe has been used in a wide variety of growths environments. The Probe has not failed in any of the environments in which it has been installed. The Probe can detect elements as light as Li to heavy elements through the Lanthanide system. In addition to AES, the analyzer provides REELS spectra of the distribution of characteristic energy losses [3]. Due to its robust and unique design, the Probe can be used in a variety of growth environments to provide real time elemental analysis during growth.

[1] P. G. Staib, J. Vac. Sci. Technol. B 29, (2011).

[2] W. Laws Calley, et al., J. Vac. Sci. Technol. B 31, (2013).

[3] P. G. Staib, at this conference. Abstract #5115

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