The W/Si(001) Schottky barrier was spatially mapped using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using high resistivity n-type and p-type silicon substrates. A thin tungsten silicide is observed upon deposition utilizing transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). The sum of the Schottky barrier heights from n-type and p-type silicon substrates agree with the silicon band gap. The BEEM and BHEM spectra are fit utilizing a linearization method to the power law of the BEEM model. Spatially resolved Schottky barrier maps are generated over a 1μm x 1μm area and provide insight into the spatial homogeneity of the barrier height. Histograms of the barrier heights show a Gaussian distribution, consistent with an interface dipole model.

Heusler alloys have attracted interest as multifunctional experimental platforms for topological quantum phenomena ranging from magnetism to superconductivity and heavy fermion behavior. The rare-earth chalcogenide ternary half Heusler compounds were theoretically predicted to have topologically nontrivial surface states due to band inversion [1]. The lack of inversion symmetry of the crystal lattice makes unconventional pairing symmetry feasible. The superconductivity in the non-centrosymmetric half Heusler compound YPtBi was recently reported as a promising system for the investigation of topological superconductivity [2]. In this work, we use ultra low temperature scanning tunneling micro scopy to investigate the superconducting properties of the ternary half Heusler compounds YPdBi and YPtBi. Both were theoretically proposed to have topological states with different band inversion strength [1], and experimentally reported as a topological insulator [3]. Strong spin-orbit coupling and the lack of inversion symmetry present the possibility of spin-triplet superconductivity in these materials. T he tunneling spectra of YPdBi show two different superconducting gaps of 0.36 meV and 0.16 meV depending on the measurement location. The variation in gaps might originate from inhomogeneity in the crystal. The superconducting gap of 0.36 meV is completely suppressed above a critical magnetic field of B=2.5 T, in agreement with bulk transport measurements. A superconducting gap of 0.21 meV and an upper critical field of 1.25 T were measured in a circular superconducting domain of diameter ≈180 nm in YPtBi. Sequential addition of single vortices to the superconducting YPtBi domain could be observed with increasing magnetic field, with vortices occupying the perimeter of the island. These observations will be discussed in terms of island confinement and pairing symmetry of YPtBi.

[1] S. Chadov, X. Qi, J. Kubler, G. H. Fecher, C. Felser, and S. C. Zhang, Nat. Mater. 9, 541 (2010).

[2] N. P. Butch, P. Syers, K. Kirshenbaum, A. P. Hope, and J. Paglione, Phys. Rev. B 84, 220504(R) (2011).

[3] W. Wang, Y. Du, G. Xu, X. Zhang, E. Liu, Z. Liu, Y. Shi, J. Chen, G. Wu, and X. Zhang, Scientific Reports 3 (2013).