Photo-conductance in novel multi-chromophoric molecules with porphyrin centers has been measured. This class of molecules is fully conjugated optical absorption properties that induce hole mediated conductivity with delocalization lengths on the order of 8 nm. Conjugated linker groups that terminate with a thiolate functionality (on one or both sides of the molecule) enable facile, co-valent attachment to a gold surface. We have attached these multi-chromophoric molecules between surface-bound Au nanoparticles and have measured transport as a function of varying laser excitation wavelengths. Additionally, we have measured spatially varying, charge transport in individual molecules within a tunneling junction utilizing a laser-coupled ultra-high vacuum scanning tunneling microscope. The wavelength dependent conductance will be discussed within the context of the molecule-Au junction.

Conjugated polymers represent a promising class of organic semiconductors with potential applications in a variety of molecular devices. Poly(3-alkylthiophene)s, in particular, are garnering interest due to their large charge carrier mobility and band gap in the visible region of the spectrum. Defects play a pivotal role in determining the performance of polymer electronics, and yet the function of specific types of defects is still largely unknown. Density functional theory calculations of alkyl-substituted oligothiophenes are used to isolate the effect of static inter-ring torsion defects on key parameters such as electronic coupling between rings and band gap. These polymers are often modeled with very short backbones and without their side chains. These results demonstrate the shortcomings of this approach for modeling torsional disorder and identify a minimal acceptable model.¹ Two experimental systems, one based on block copolymers and the other on a hybrid oxide nanotube-polymer system, with nanoscale morphology rationally designed to minimize torsional disorder will also be discussed. Results have potential implications both for the fundamental understanding of intramolecular charge transport and for improving processing in organic optoelectronic devices.

¹ Use of the Center for Nanoscale Materials was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract #DE-AC02-06CH11357.

Pentacene and its derivatives are leading candidates for many organic electronics applications including electron donors in organic photovoltaics. Charge trapping, which is associated with device degradation in both photovoltaics and transistors, remains poorly understood even in this comparatively well studied class of materials. Northrup and Chabinyc [1] have carried out ab initio studies showing that reactions of holes with hydrogenated and oxygenated pentacene is a plausible charge trapping mechanism. Jaquith et al. [2] demonstrated a dependence of trap formation rate on hole concentration in pentacene, which is consistent with traps forming by a defect-mediated chemical reaction, and showed that traps could be cleared by the application of light. Coffey and Ginger [3] have shown that the fastest charging rates under illumination in polymer/fullerene films do not occur at phase interfaces, as widely assumed. Charge generation at the donor-acceptor interface in organic heterojunctions also remains poorly understood.

To resolve such open questions, we have developed a general approach to illuminating samples (from above) in an electric force microscope. We will describe studies where variable-wavelength light is utilized to clear traps in polycrystalline pentacene transistors. We will also discuss investigations into image charge generation in bis(thienyl)-pentacene/PCBM bulk heterojunction thin films.

[1] J.E Northrup and M.L. Chabinyc, Phys. Rev. B 68, 041202 (2003).

[2] M.J. Jaquith, E.M. Muller, and J.A. Marohn, J. Phys. Chem. B 111, 7711 (2007).

[3] D.S. Ginger and D.C. Coffey, Nat. Mater. 5, 735 (2006).

We suggest a near-ambient temperature, simple and potentially low-cost approach to fabricate semiconductor solar cells. To this end we use a monolayer of organic molecules that self-assembles onto n-Si, to passivate and buffer the Si surface. The direct binding of the molecules to the oxide-free Si surface also provides a strong interface dipole and effectively reduces the semiconductor's electron affinity by as much as 0.7 eV. A thin layer of a conducting polymer with a high work function, that is spin-coated on top of the molecular layer plays a threefold role:

1. the high work function induces inversion in the Si and leads to an n-p⁺ homojunction in the Si;

2. with n~1.5 refractive index the polymer acts as an anti-reflective coating to the Si.

3. because it protects the molecular monolayer, subsequent metal deposition and encapsulation is now possible.

Good and stable interface passivation along with strong inversion allow minority carriers, generated by absorbed sun light, to move laterally within the inverted Si top layer and to be collected by a minimal area metal grid, deposited on the conducting polymer. For the same reason (lateral conductance) photo-current losses, due to polymer sheet resistance, are minimized. Not only are cells fabricated without high temperature steps, the use of small organic molecules appears to convey here a unique advantage over inorganic passivation or buffer layers. The approach, which includes no or minimal (for metal grid) high vacuum steps, should be applicable to other inorganic absorbers, amorphous materials and thin films to improve photovoltaic solar energy conversion.