AVS1996 Session FP-MoP: Flat Panel Displays Poster Session
Monday, October 14, 1996 5:30 PM in Ballroom A
Monday Afternoon
Time Period MoP Sessions | Topic FP Sessions | Time Periods | Topics | AVS1996 Schedule
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FP-MoP-1 Amorphous Diamond t-aC High Brightness Field Emitter
J. Jerome (North Carolina State University); S. Kim (Skion Corporation); Y. Ahn (Stevens Institute of Technology); S. Camphausen (North Carolina State University); S. Bozeman (Commonwealth Scientific Corporation); L. Krasnobaev (North Carolina State University) Amorphous Carbon films with high sp\super 3\ content can be prepared by the condensation of energetic carbon species at and below room temperature. These films have been doped n and p-type and have been shown under some conditions to field emit electrons. Electron emission from these materials is generally unstable. We report on a new t-aC film compositions that produce stable emission with turn on voltages from about 7 to 10 Volts per micron. These compare favorably to typical films which emit above 20 Volts per micron which is the minimum field for some device applications. A surprising feature of these new t-aC compositions is that films left under ambient laboratory environment for more than six months, show these favorable characteristics with no pretreatment. We will describe the fabrication process, film compositions, and the electrical characteristics and electron emission for these films. |
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FP-MoP-2 Criteria for Selection of Wide Band Gap Semiconductors for Field Emission Devices
V. Zhirnov (Institute of Crystallography); G. Wojak, W. Choi, J. Cuomo, J. Hren (North Carolina State University) A protocol for the selection of wide band gap materials for application in cold emission devices is presented. The criteria for material choice for device applications are discussed from both a materials and a technological viewpoint. Among the material parameters, the following are argued to be the most important: electron affinity, dielectric constant, thermal conductivity, melting point, chemical and physical robustness. The major technological criteria are: compatibility of the material deposition process with the other steps of cathode fabrication and the commercial availability of facilities. Theory and experimental results suggest that wide band gap materials deposited onto sharp conductive emitters will make the most effective field emitters. Experimental results for diamond, AIN, BN, and SiO2 are deposited onto needles and support these conclusions. |
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FP-MoP-4 Electron Emission Properties of Diamond Films Grown in H\sub 2\-CH\sub 4\, Ar-CH\sub 4\ and Ar-C\sub 60\ Plasmas
A. Krauss, D. Zhou, D. Gruen (Argonne National Laboratory) Efficient cold cathode emission of electrons from diamond and diamond-like carbon films requires (1) injection of charge carriers from the substrate into delocalized states in the film; (2) transport through the film to the surface; (3) emission from the surface into the vacuum. Typically, only a small fraction of the surface participates in the emission process. It has therefore been difficult to study the details of the emission mechanism. Also, several physical properties are normally interrelated so that it is difficult to perform controlled measurements of the effects of these properties on electron emission. The development of devices like flat panel computer displays which use cold cathode electron emission has been hampered by a lack of basic understanding of the emission process. A method has been developed for growth of diamond films in the near-absence of atomic hydrogen, using Ar-C\sub 60\ or Ar-CH\sub 4\ plasmas. This method produces films which respond differently to variations in growth conditions compared with films grown in large quantities of hydrogen. The differences manifest themselves in the manner in which the nucleation density, grain size, grain boundary width, surface roughness, crystallographic orientation and the extent and localization of regions of sp\super 2\ and sp\super 3\ electronic bonding character vary with the hydrogen concentration in the plasma. We have been able to relate several of these properties to the effective work function, turn-on voltage and emission site density by comparing the electron emission behavior and physical properties of conventional micro-and nano-crystalline, and low-hydrogen nanocrystalline diamond films. ----------------------------------------------------------------------------------------------------------- Work supported by the U.S. Department of Energy, BES-Materials Sciences, under contract w-31-109-eng-38 and CRADAs C9404900 and C9501501. The submitted manuscript has been created by the University of Chicago as Operator of Argonne National Laboratory ("Argonne") under Contract No. W-31-109-ENG-38 withthe U.S. Department of Energy. The U.S. Government retains for itself, and others acting on its behalf, a paid-up, nonexclusive, irrevocable worldwide license in said article to reproduce, prepare derivative works, distribute copies to the public, and perform publicly and display publicly, by or on behalf of the Government. Submitted for presentation at: American Vacuum Society 43rd National Symposium Philadelphia, Pennsylvania October 14-18, 1996. |