ALD2023 Wednesday Morning
Sessions | Time Periods | Topics | Schedule Overview
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| Session | Wednesday, July 26, 2023 | |||||||||||||||
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| 8:00 AM | 9:00 AM | 10:00 AM | 11:00 AM | |||||||||||||
| AA1-WeM | 
                                 
                                    3D Integrated Device Applications of ALD-Grown Ferroelectric and Oxide-Semiconductor Materials
                                    
                                 
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                                    Cross-Point Metal-Ferroelectric-Metal Capacitors Array for Compute-in-Memory Applications
                                    
                                 
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                                     Using ALD to Precisely Place Multiple Transition Metal Impurities to Defect Engineer MIM Diode Performance 
                                    
                                 
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                                    The Impact of Oxygen Source on the Formation of TiN Interface at the Initial Stage ALD process of Hafnia-based Ferroelectrics: An in-situ Analysis
                                    
                                 
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                                    Performance Enhancement in HZO Based Ferroelectric Memory Devices
                                    
                                 
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                                    Stabilization of Tetragonal Phase of Ti-doped ZrO2 Deposited by ALD
                                    
                                 
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                                    Three Terminal Synaptic Devices Employing ALD Grown Dual Dielectrics and Their Linear Learning Process
                                    
                                 
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                                 Break & Exhibits 
                                    
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| AA2-WeM | 
                                 
                                    Opportunity of Atomic Scaled Materials in Revolutionary Memory Technologies
                                    
                                 
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                                    Ultra High-k HfZrO4 Thin Films Grown by Atomic Layer Deposition using Metal-Organic and Brute HOOH Precursors
                                    
                                 
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                                    Achieving Ultra-High Mobility and Reliability of ALD-IGZO TFTs via Selective N2O Plasma Reactant for BEOL Applications
                                    
                                 
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                                    Ultrathin and Highly Crystalline Indium Oxide Thin Films Using Novel Liquid In Precursor as a New Channel Material
                                    
                                 
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| AF1-WeM | 
                                 
                                    Measuring the Time-Resolved Heat of ALD Surface Reactions
                                    
                                 
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                                    HfO2 ALD on Si(111) - A Mechanistic in-Situ Study through Time-resolved APXPS
                                    
                                 
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                                    In Situ Reflection High Energy Electron Diffraction Investigations of Epitaxial Growth and Crystallization of Gallium Oxide Thin Films
                                    
                                 
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                                    Surface and Film Stress during ALD of Al2O3 and ZnO: In Situ Measurements Using Wafer Curvature Techniques
                                    
                                 
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                                    Chemisorption Mechanisms of Aminosilane Precursors during ALD of SiO2: in situ Characterization and ab initio Study
                                    
                                 
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                                    Seeing It Happen: Insights Into the Surface Chemistry of HfO2 and TiO2 ALD from Operando Ambient Pressure X-ray Photoelectron Spectroscopy
                                    
                                 
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                                 Break & Exhibits 
                                    
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| AF2-WeM | 
                                 
                                    Preparation and Characterization of Well-Defined Mixed-Oxide and Metal-Oxide Interfaces in Porous Catalysts using ALD
                                    
                                 
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                                    A Toolbox for Characterization of Film Penetration Depth in High Aspect Ratio Structures
                                    
                                 
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                                    Understanding Process Parameters of ALD on Silica Aerogels and Their Effects on Mechanical Properties
                                    
                                 
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                                    Tuning Properties of ZnO Deposited via ALD for Applications in Sensing and Porous Material Development
                                    
                                 
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| ALE1-WeM | 
                                 
                                    Plasma-Enhanced Atomic Layer Etching for Metals and Dielectric Materials
                                    
                                 
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                                    Controlling the Hole Profile of High Aspect Ratio Structures in Atomic Layer Etching of SiO2 by Utilizing Dc-Superposition in Capacitively Coupled Plasmas
                                    
                                 
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                                    Damage Analysis of Reactive Ion and Quasi-Atomic Layer Etched Silicon
                                    
                                 
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                                    Atomic Layer Etching of SiO2 via H2/SF6 Plasma and TMA
                                    
                                 
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                                    Learnings and Mitigations of Nonuniformity in Oxide Quasi Ale Applied to Contact Patterning
                                    
                                 
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                                    Adopting a Low Global Warming Potential Fluorocarbon Precursor (C6F6) to Atomic Layer Etching of Sio2 with Fluorocarbon Plasmas
                                    
                                 
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                                    Thermal ALE Reactants for Semiconductor Processing
                                    
                                 
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                                 Break & Exhibits 
                                    
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| ALE2-WeM | 
                                 
                                    Isotropic Plasma-Thermal Atomic Layer Etching of Aluminum Nitride Using SF6 Plasma and Al(CH3)3
                                    
                                 
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                                    Gan Atomic Layer Etching Using SF6 and Ar Plasmas Controlled by RFEA and Langmuir Probe Measurements
                                    
                                 
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                                    Speedy and Smooth Atomic Layer Etching for Silicon Carbide with DC Bias-Pulsing
                                    
                                 
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                                    Thermal Atomic Layer Etching of MoS2 Films
                                    
                                 
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| AM-WeM | 
                                 
                                    Atomic Layer Technologies for III-V Nitride Epitaxy, High-K/Metal Gate, Ferroelectric Negative Capacitance, and Area-Selective Deposition
                                    
                                 
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                                    Optimizing Vessel Design for Pulsed Delivery of Solid Precursors
                                    
                                 
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                                    Accurate Precursor Dose Delivery with Realtime Closed Loop Control
                                    
                                 
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                                    Fast and Efficient Large Format ALD
                                    
                                 
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                                    Mechatronic Spatial Atomic Layer Deposition for Closed-Loop Process Control
                                    
                                 
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                                    Spatial Atomic Layer Deposition: A New Revolution in Ultra-Fast Production of Conformal Optical Coatings
                                    
                                 
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                                    Spatial ALD of Iridium Oxide Electro-Catalyst Layers for PEM Electrolysis
                                    
                                 
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                                 Break & Exhibits 
                                    
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| EM-WeM | 
                                 
                                    Novel Organic-Inorganic Hybrid Thin Films Deposited by Molecular Atomic Layer Deposition (MALD) for EUV Resist Applications
                                    
                                 
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                                    Inorganic Cluster Synthesis and Characterization via Atomically Precise ALD in Polymers
                                    
                                 
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                                    Molecular Layer Deposition of Al- and Hf-Based Hybrid Resists for Electron-Beam and EUV Lithography
                                    
                                 
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                                    High-resolution EUV Lithographic Patterning Characteristics of InOx-PMMA Hybrid Photoresist Generated by Vapor-phase Infiltration
                                    
                                 
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