ALD2019 Wednesday Morning
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Wednesday, July 24, 2019 | |||||||||||||||
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| 8:00 AM | 9:00 AM | 10:00 AM | 11:00 AM | |||||||||||||
| AA1-WeM |
ALD/ALE Process in Commercially Available Leading-Edge Logic and Memory Devices
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Atomic Layer Deposited Crystalline Zinc Oxide for Silver-based Ultra-Steep Threshold Switching Selector
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ALD Ge-Se-Te OTS Selectors with Controlled Composition for PCM Applications
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Pulsed CVD of Amorphous GeSe for Application as OTS Selector
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Thin Film Challenges in 3D NAND Scaling
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| AA2-WeM |
The Journey of ALD High-k Metal Gate from Research to High Volume Manufacturing
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Effects of Er Doping on Structural and Electrical Properties of HfO2 Grown by Atomic Layer Deposition.
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Improvement of Electrical Performances of Atomic Layer Deposited ZrO2 MIM Capacitors with Ru Bottom Electrode
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Perfecting ALD-Y2O3/GaAs(001) Interface with Ultra-High Vacuum Annealing
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| ALE1-WeM |
ALD and Etch Synergy to Enable the Next Scaling Innovations
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On the Role of Individual Etching Components in Selective Atomic Layer Processing: Etch and Deposit to Obtain High Selectivity
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Area-Selective Deposition of TiO2 on Various Surfaces by Isothermal Integration of Thermal TiO2 ALD and ALE
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Limited Dose ALE and ALD Processes for Local Film Coatings on 3D Structures
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Formation of Ohmic Contacts to Si using In-situ Chemical Cleaning of the Substrate
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SADP Spacer Profile Engineering by Quasi-Atomic Layer Etching
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| ALE2-WeM |
Dynamic Temperature Control Enabled Atomic Layer Etching of Titanium Nitride
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Rapid Thermal-Cyclic Atomic Layer Etching of Thin Films with Highly Selective, Self-Limiting, and Conformal Characteristics
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Atomic Layer Etching of HfO2 with Selectivity to Si by Utilizing Material-Selective Deposition Phenomena
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Enhancing Etch Selectivity in Plasma-Assisted ALE of Silicon-Based Dielectrics using Surface Functionalization
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| AM1-WeM |
Impact of Operating Parameters on Precursor Separation in “Air Hockey” Spatial Atomic Layer Deposition Reactor
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Plasma Enhanced Spatial ALD of Silver Thin Films at Atmospheric Pressure
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Low Temperature Spatial PEALD of Silicon Nitride Films from Aminosilane Precursors and DC Direct Plasma
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Development and Characterization of an Atmospheric Pressure Plasma Reactor Compatible with Open-Air Spatial ALD
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Fast Plasma ALD Employing de Laval Nozzles for High Velocity Precursor Injection
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Development of a Meter Scale ALD Optical Coating Tool for Astronomical Mirror (and other) Applications
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From Wet-lab to Cleanroom: An Integrated ALD-CVD Process for the Large-area Deposition of Ultrathin Zeolitic Imidazolate Framework Films
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| EM1-WeM |
Molecular Layer Deposition of Titanicone Films using TiCl and Fumaric or Maleic Acid: Growth Mechanism and Ambient Stability
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Temperature Dependent Surface Chemistry in Molecular Layer Deposition of Polyimide on Cu and Si
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Integrated MLD Supercycle for the Direct Deposition of Zeolitic Imidazolate Framework Films
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Understanding Molecular Layer Deposition Nucleation Mechanisms in Polyurea via Time Domain Thermoreflectance
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Molecular Layer Deposition of Indicone Thin film using Indium Precursor and Hydroquinone
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Air Stable Alucone Thin Film Deposited by Molecular Layer Deposition using Hetero Bifunctional Organic Reactant
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Molecular Layer Deposition of “Magnesicone”, a Magnesium-based Hybrid Material, as a Matrix Material for Solid Composite Electrolytes
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Molecular Layer Deposition of Polyamide Films on Particles Using a Rotating Cylinder Reactor
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| EM2-WeM |
Vapor Phase Infiltration: A Route for Making Insulating Polymer Fibers Conductive
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Vapor Phase Infiltration of Metal Oxides into Microporous Polymers for Organic Solvent Separation Membranes
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ZnO-Infiltrated Hybrid Polymer Thin Films with Enhanced Gravimetric Water and Oxygen Vapor Sensing Properties
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Physically Interpenetrated Organic-Inorganic Sub-Surface Layers Created via Vapor Phase Infiltration for Improved Film Adhesion
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Inorganic-Organic Thin Film Layer-Structures and Thermal Conductivity
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| EM3-WeM |
Atomic Layer Epitaxy of Zinc Oxide on C-plane Sapphire from Diethylzinc and Water using Pulsed-Heating Atomic Layer Deposition
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Growth of AlN Barriers in Al/AlN/Al SIS Josephson Junctions by Low Temperature Atomic Layer Epitaxy
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Investigating Plasma Parameters and Influence of Argon to the Crystallinity of GaN Films Grown by Plasma-Assisted ALD
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Ultrathin GaN Epilayer by Low-temperature Atomic Layer Annealing and Epitaxy
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High Quality ALD Formation of Group-III Nitrides and their Applications in FTO-based Thin Film Solar Cells
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