ALD2017 Sunday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Sunday, July 16, 2017
1:30 PM 2:30 PM 3:30 PM 4:30 PM
AF-SuA
Atomic Layer Deposition of Silicon Dielectrics: Precursors, Processes and Plasmas
Atomic Layer Deposition of Carbon Doped Silicon Oxide by Precursor Design and Process Tuning
Evaluation of Silicon Precursors for Low Temperature Silicon Nitride Deposition
Atomic Layer Deposition of SiO2 Using Tris(dimethylamino)Aminosilane Precursor and Ozone
In situ Infrared Absorption Study of Plasma-Enhanced ALD of Silicon Nitride using Di-sec-butylaminosilane and Bis(t-butylamino)silane on Silicon and Silicon Nitride Surfaces
First-Principles Understanding of Reaction Mechanisms in Plasma Enhanced Atomic Layer Deposition of Silicon Nitride
Atomic Layer Deposition of AlN from AlCl3 using NH3 and Ar/NH3 Plasma as Co-reactant
Coffee Break & Exhibit
Nanoscale Gettering of Excess O in CuO Nanowires via ALD Al2O3
Temperature Dependent Growth of Alumina on Tungsten Nano-Powder
Critical Aspects in Fluid Bed ALD
Super-Conformal Growth by ALD
Thin Film Conformality Profile Analysis with Microscopic All-Silicon Lateral High Aspect Ratio Structures
ALD onto Particles: Batch and Continuous Processes for Industry
ALE-SuA
Atomic Layer Processes to Enable the Atomic Scale Era
Thermal Atomic Layer Etching of SiO2 by a “Conversion-Etch” Mechanism
The Challenges and Opportunities in Plasma Etching of Functionally Enhanced Complex Material Systems
A Novel Process for Atomic Layer Etching of ZnO using Acetylacetone and Remote O2 Plasma
Determining the Benefits and Limitations of Atomic Layer Etching: A Modeling Investigation
Coffee Break & Exhibit
ALE TBD 2
Significant Improvements of CD Uniformity and ARDE in ODL Mask Etching using a Self-limiting Cyclic Etch Approach
Nanometer-Scale III-V 3D MOSFETs
Atomic Layer Etch Processes Developed in an ICP/RIE Etching System for Etching III-V Compound Semiconductor Materials
Enhanced Thermal ALE of Aluminum Oxide Combined with ALD for UV Optical Applications
AS-SuA
Area Selective Deposition Using Spatial ALD and Polymer Patterns
Area-selective ALD of Silicon Oxide using Acetylacetone as Inhibitor in a Three-step Cycle
Evaluation of Different Nanoimprint Resists for a use in Area-selective Atomic Layer Deposition of Selected Materials
Developing a Full Wafer-scale Approach Towards High ALD Selectivity on Copper vs Low-K (and Oxides) using a Single ALD/SAMS Platform
Fabrication of Large-area Nanolines by Area-selective Atomic Layer Deposition
Nanoscale Selective Deposition of TiO2 using e-beam Patterned Polymeric Inhibition Layers and TDMAT Precursor
Area-selective Atomic Layer Deposition using Inductively Coupled Plasma Polymerized Fluorocarbon Layer: A Case Study for Metal-Oxides and Metals
Coffee Break & Exhibit
Adventures and Advances in Selective Deposition
Direct-write ALD of Transparent Conductive Oxides: Micro- and Nanoscale Patterned In2O3:H and ZnO
Inherent Substrate-Selective Growth of Cobalt and Nickel Metal Films by Atomic Layer Deposition
Delayed Nucleation of HfO2 and TiO2 ALD on Carbon via Cyclic Plasma Treatments for Application in Selective-Area Deposition
Selective Deposition Process Combining PEALD and ALE
NS+
Plasma-enhanced Atomic Layer Deposition of Large-area MoS2: From 2-D Monolayers to 3-D Vertical Fins
Low-Temperature Atomic Layer Deposition of MoS2 Films
Dielectric-MoS2 Interfaces Grown by Atomic Layer Deposition
Plasma-Enhanced Atomic Layer Deposition of sub-5 nm high- k Dielectrics on 2D Crystals
Novel in-situ Electrical Characterization of the Atomic Layer Deposition Process on 2D Transition Metal Dichalcogenides Transistors
Deposition of MoS2 and WS2 from bis(tert-butylimido)-bis(dialkylamido) Compounds and 1-Propanethiol
Direct Growth of Layered Boron Nitride Films on MoS2 using Atomic Layer Deposition for 2D Based Nano-electronics
Fabrication of Functional Complex Nanostructures Based on Novel Atomic Layer Deposition Approach of Boron Nitride
When There is no Bulk: Growth and Structure of Dielectric and Semiconductor Oxide Nanolaminates
Perfecting Single-Crystal Ternary Perovskite YAlO3 Epitaxial Growth on GaAs(111)A Utilizing Atomic Layer Deposited Sub-Nano-Laminated Y2O3/Al2O3
Thermal Coefficient of Resistance (TCR) Measurements for Atomic Layer Deposited Metal-Metal Oxide Nanocomposites
Phase Control of Ga2O3 Films Deposited by Atomic Layer Epitaxy
High Quality SiN and SiO2 Films Produced by PEALD with Microwave ECR Plasma Below 200 ºC
Tertiary Butyl Hydrazine as a Reducing Agent for Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films
Sessions | Time Periods | Topics | Schedule Overview