PCSI2024 Wednesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
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| Session | Wednesday, January 17, 2024 | ||||||||||||||||||||||||||||||||||||||||||||||
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| 2:00 PM | 3:00 PM | 4:00 PM | 5:00 PM | ||||||||||||||||||||||||||||||||||||||||||||
| PCSI-WeA1 | 
                                    Imaging the Properties of Atoms and Fields at the Picometer Scale inside Materialsand Devices
                                    
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                                    Cryogenic Growth and in-Situ Fabrication of Superconducting Tantalum Devices
                                    
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                                    Multi-Technique Characterization of GaN-Based Devices: A Powerful Tool to Probe the in-Depth Chemistry
                                    
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                                    Mo-SiNx Granular Metal High-pass Filters
                                    
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                                    Restructuring Cracks in Rutile TiO2 with Radiolysis-Driven Rolling of Octahedral Units
                                    
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                                    UPGRADED: Growth and Angle-Resolved Photoemission of Strain- and Thickness- Tuned Epitaxial α-Sn Thin Films
                                    
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                                    Characterization of Buffer Layers for Remote Plasma-Enhanced Chemical Vapor Deposition of Germanium-Tin Epitaxial Layers
                                    
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                                    Near Zero-Field Magnetoresistance and Defects in GaN pn Junctions
                                    
                                 | Coffee Break & Poster Viewing | ||||||||||||||||||||||||||||||||||||||
| PCSI-WeA2 | 
                                    Heteroepitaxy of PbSe-SnSe Semiconductors on GaAs for Infrared Optoelectronics
                                    
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                                    Investigation of Localized Electric Fields of InAs/GaAs Quantum Dot Interfaces
                                    
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                                    X-STM Study of Interlayer Effects on InAs Quantum Dots in InP
                                    
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                                    UPGRADED: Atomic Scale Analysis of N Dopants in InAs
                                    
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                                    Direct Wafer Bonding of GaN on AlN Through the Optimization of Chemical Mechanical Polishing
                                    
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                                    Strategies for Analyzing Non-Common-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb
                                    
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                                    Multi-Material Deposition for Spatial Atomic Layer Deposition Process
                                    
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