NAMBE 2022 Tuesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details. Click a Session in the first column to view session papers.
| Session | Tuesday, September 20, 2022 | |||||||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | 4:30 PM | |||||||||||||||
| NM-TuA1 |
NAMBE Young Investigator Awardee Talk: Why do we Bother Using Costly MBE for Semiconductor Nanowires?
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Electrical Characterization of Doped GaSbBi Films Using High Resistivity AlGaSb Underlayers
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Influence of Growth Conditions on InAlBiAs Morphology and Electrical Properties
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ErAs:InGaAlBiAs materials for 1.55 μm-pumped Terahertz Photoconductive Switches
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Impact of Bi Surface Coverage During Growth on GaAsBi Diode Performance
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Towards Lattice-Matched Narrow Bandgap InAsySb1-x-yBix Photodetectors
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BREAK & EXHIBITS
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| NM-TuA2 |
sub-Monolayer Surface Termination Control of Charge Transfer and Band Alignment Across a Semiconductor-Crystalline Oxide Heterojunction
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Heteroepitaxial Growth of (111)-oriented Sr1-XCaXTiO3 Thin Films on III-Nitride Semiconductors
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MBE Growth and Electronic Properties of Epitaxial SrNiO3-based Heterostructures
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Controlling Dislocation Formation and Dynamics in GaAs-Based Films on Silicon via Indium Alloying
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Grafted Si/GaN, AlN/Si, and GaAs/GeSn PN Junctions with Epitaxy-Like Interface Qualities
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Integrating GaSb-Based Infrared Detectors with Si Substrates via Interfacial Misfit Arrays
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Epitaxial Growth of Highly Mismatched Antimonide-Based Alloys Using Imf and Defect Filter Layers
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Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire
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Improved-Quality of 3D Semiconductors at Low Temperature Using Intermediate 2D Materials
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