NAMBE2016 Wednesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Wednesday, September 21, 2016 | ||||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | 4:30 PM | ||||||||||||
| MBE-WeA |
MBE Growth of Unusual Materials: Heavily-doped Semiconductors and Topological Insulators
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Growth and Properties of Broadly-Tunable AlInAsSb DigitalAlloys on GaSb
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Improvement in Quantum Mobility in InSb Quantum Well Structures by Reduction of Extended Defects
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Molecular Beam Epitaxy of Metamorphic InAsSb on GaSb Substrates for Long Wavelength IR Applications
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Surface Phase Stability and Intermixing on InAsSb Alloy Surfaces
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Break
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Nucleation and Grain Control for Improved Growth of WSe2 and WTe2 based Van der Waals Heterostructures
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MBE Growth of GaSe on GaAs(111)B and GaN(0001)/SiC Substrates
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Large-area Growth of Multi-layer Hexagonal Boron Nitride on Polished Cobalt Foils by Plasma-assisted Molecular Beam Epitaxy
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Quasi van der Waals Epitaxy of GaAs on Si Using Layered Material as a Buffer
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GaN Epitaxy on Graphene-stabilized Porous Silicon Compliant Substrate
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1.7 eV Mg0.13Cd0.87Te Solar Cells Grown by MBE
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