NAMBE2016 Wednesday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Wednesday, September 21, 2016
1:30 PM 2:30 PM 3:30 PM 4:30 PM
MBE Growth of Unusual Materials: Heavily-doped Semiconductors and Topological Insulators
Growth and Properties of Broadly-Tunable AlInAsSb DigitalAlloys on GaSb
Improvement in Quantum Mobility in InSb Quantum Well Structures by Reduction of Extended Defects
Molecular Beam Epitaxy of Metamorphic InAsSb on GaSb Substrates for Long Wavelength IR Applications
Surface Phase Stability and Intermixing on InAsSb Alloy Surfaces
Nucleation and Grain Control for Improved Growth of WSe2 and WTe2 based Van der Waals Heterostructures
MBE Growth of GaSe on GaAs(111)B and GaN(0001)/SiC Substrates
Large-area Growth of Multi-layer Hexagonal Boron Nitride on Polished Cobalt Foils by Plasma-assisted Molecular Beam Epitaxy
Quasi van der Waals Epitaxy of GaAs on Si Using Layered Material as a Buffer
GaN Epitaxy on Graphene-stabilized Porous Silicon Compliant Substrate
1.7 eV Mg0.13Cd0.87Te Solar Cells Grown by MBE
Sessions | Time Periods | Topics | Schedule Overview