NAMBE2016 Tuesday Morning

Sessions | Time Periods | Topics | Schedule Overview

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Session Tuesday, September 20, 2016
8:30 AM 9:30 AM 10:30 AM
Heterovalent and Heterocrystalline Epitaxy for Device Applications and New Physical Phenomena
Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control
Growth and Characterization of Bi2(Se1-xTex)3 Topological Insulators
Transport Properties of Doped Ultra-Thin Sb Quantum Wells
Comparison II-VI/ Bi2Se3Superlattices Grown in Single or Multiple Chamber Systems
Break & Exhibits
MBE Growth Techniques for InAs-based nBn IR Detectors
Room-temperature Mid-infrared Quantum Well Lasers on Multi-Functional Metamorphic Buffers
Mid-Infrared Cascaded InAs/GaSb Superlattice Light Emitting Diode Arrays on Mismatched GaAs Substrates
Longer-Wavelength Interband Cascade Lasers Emitting at 4.6-6.1 ┬Ám
III-V Semiconductor Extended Short-Wave Infrared Detectors
Novel Anode Layer in High-Power, Mid-Wave Infrared, Superlattice Light Emitting Diodes
Sessions | Time Periods | Topics | Schedule Overview