NAMBE2016 Tuesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details. Click a Session in the first column to view session papers.
| Session | Tuesday, September 20, 2016 | |||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | ||||||||||||
| MBE-TuA |
Plasma Assisted MBE Growth and Optical Properties of II3V2 Nitride Seminconductors
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Real-time, In-situ Flux Monitoring During Molecular Beam Epitaxy Growth
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MBE Growth and Characterization of InAsSbBi
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Dilute Nitride Photodiode and Resonant Tunneling Diode for Mid-infrared Applications
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GaAsBi/GaAs MQWs LED Grown by Molecular Beam Epitaxy
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Break & Exhibits
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Molecular Beam Epitaxial Growth and Characterization of AlGaN Nanowires for 240 nm Emitting UV LEDs and Lasers
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Ultraviolet Nanowire LEDs Grown Directly on Flexible Metal Foil: A Route Toward Scalable Molecular Beam Epitaxy
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Dependence of Resonant Bias on Well Width in Nitride Resonant Tunneling Diodes Operating at Room Temperature
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Molecular Beam Epitaxial Growth and Characterization of AlN Nanowall Deep UV Light Emitting Diodes
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Polarization Charge Assisted Doping of AlxGa1-xN by Graded and Short-period Superlattices using MBE for Deep UV LEDs
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MBE Grown Deep UV LEDs on Bulk AIN Crystal
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