IWGO 2026 Tuesday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Tuesday, August 4, 2026
2:00 PM 3:00 PM 4:00 PM 5:00 PM
IWGO-TuA1
Heterogeneous Gallium Oxide Integration and Vertical Device Technology
>10 kV Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
Semiconductor Properties of Epitaxial NiGa2O4 Spinel That Forms at Ga2O3/NiO Interfaces
Breaking the 6 eV Barrier: Colossal Bandgap Electronics with Si Doped α-(AlXGa1-X)2O3 by S-MBE
Thin-Film β-Ga2O3 Composite Substrates for Thermal Management Solutions
COFFEE BREAK
IWGO-TuA2
Conductive Al2O3 with Ohmic Contacts via Ion Implantation
In-Situ X-Ray Topography Observation of Behavior of Dislocations in β-Ga2O3(001) Schottky Barrier Diode During Applying Voltage
Killer Defects in (011) HVPE-Grown β-Ga2O3 Schottky Barrier Diodes Studied by Synchrotron X-ray Topography and Emission Microscopy
Impact of Bias Dependent Joule Heating on Gallium Oxide Lateral Transistors via Deep UV Thermal Imaging
Engineered Substrates for Ga2O3 Vertical Power Devices
Sessions | Time Periods | Topics | Schedule Overview