IWGO 2026 Thursday Morning
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Thursday, August 6, 2026 | |||||||||||||||||||||||||||||||||||||||||||||||
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| 8:00 AM | 9:00 AM | 10:00 AM | 11:00 AM | |||||||||||||||||||||||||||||||||||||||||||||
| IWGO-ThM1 |
Breakfast
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Impact of Defects and Impurities on the Properties of Al2O3
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GeO2 and GeXSn1–XO2 Alloys: Emerging Ultra-Wide-Band-Gap Materials for Power Electronics
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Rutile GeₓSn₁₋ₓO₂ Alloys for Ultra-Wide Bandgap Electronics: Phase Stability and Bandgap Engineering
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Single Ga-Layer Reconstruction Mediates Ga₂O₃ Heteroepitaxy: A Multiscale Atomistic Study
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Carrier Mobility in GexSn1-xO2 Alloys from First Principles
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Refractive Indices, Band-to-Band Transitions, and Ultraviolet Dielectric Functions of Unintentionally-Doped (x = 0 . . . 0.3) and Silicon Doped (x = 0 . . . 0.25) Single Crystal (100) β-(AlxGa1−x)2O3
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COFFEE BREAK
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| IWGO-ThM2 |
4D-STEM and Machine Leaning Investigation of Defects and Polymorphism in Ultra Wide Band Gap Oxides and Nitrides
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Bandgap Renormalization in Si-doped β-Ga2O3 Films
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Formation and Stabilization of Ga Vacancies in β-(Al,Ga)2O3: Effects of Al-alloying, Si-doping, and Proton Irradiation
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Nitrogen-Doped (AlGa)2O3/n-Ga2O3 Junctions Grown by Plasma-Assisted Molecular Beam Epitaxy
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