A self-protective compliance current conductive bridge random access memory (CBRAM) device was produced by physical vapor deposition (PVD). The device structure was ITO/CuTe/TiN which insulator was a solid-state electrolyte. ITO electrode made the device form self-compliance I-V characteristic without selectors. To clarify the switching mechanism, conduction current fitting was applied to explore that resistance changed depend on dielectric constant rather than schottky distance by multi-reset process. Meanwhile, we were modeling to explain the characteristic that tellurium which was dissociated from solid-state electrolyte CuTe was stacking on ITO electrode. There was a resistor formed to protect the CBRAM device.

Ultralow k dielectric materials as one of implementations to the continuing scaling of microelectronic devices is used to maintain the low interconnect capacitance and high mechanical strength. Under a variety of circumstances, electronic devices undergo a wide range of temperature and humidity in working environment. Such that a cellphone manufactured in the cold winter of northern China should work functionally at 35C with 100% relative humidity in Singapore. To investigate the spectrum of mechanical behaviors of nanometer scale ULK films in the environment, we performed nanoindentation on 200nm Ultra-low k material from 5C -85C and 5-90% Relative Humidity. Cohesive fracture as well as indentation modulus is affected by the temperature and humidity. The mechanical properties of Ultralow k material will be discussed in detail.

Technological development for memory, logic IC, on-display devices and batteries is indispensable for advanced portable electronic products. Among all these devices, a reliable, fast-working, and energy-saving non-volatile memory especially for portable applications is extremely important. Resistance Random Access Memory (RRAM) has great potential to serve as a next-generation nonvolatile memory device due to its simple structure, low power consumption, rapid operation, and high density integration capability.

RRAM devices have been thoroughly investigated both for stand-alone memory and array applications, their power consumption is crucial to applications. RRAM devices have small operation voltage with enough on/off ratio will effectively reduce total power consumption. By determinate mechanism of low operation voltage RRAM will decrease power consumption of arrayed RRAM, it also can be operated by small transistors with low conduction current. In our experiment, we found the RRAM structure ITO/ITO(O₂)/TiN have low operation voltage(-0.05V to +0.06V) with one order between on/off ratio. We find that is relate to oxygen distribution between ITO and ITO(O₂) layer, analyzing electricity data by Schottky conduction formula. By comparing intercept and slope of Voltage - nature log Current diagram to another RRAM with Schottky conduction, we explained why RRAM with ITO/ITO(O₂)/TiN structure have such small operation voltage.