ICMCTF2007 Session H2: High Power Impulse Magnetron Sputtering (HIPIMS)
Time Period ThM Sessions | Abstract Timeline | Topic H Sessions | Time Periods | Topics | ICMCTF2007 Schedule
Start | Invited? | Item |
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8:00 AM | Invited |
H2-1 Influencing Parameters for Thin Film Deposition in High-Power Impulse Magnetron Sputtering Processes
S. Konstantinidis, J.P. Dauchot, M. Hecq (Materia Nova, Belgium) High-Power Impulse Magnetron Sputtering (HiPIMS) is an interesting deposition process as it represents a relatively easy way to increase vapor ionization and thus to promote energetic condensation of the films. Parameters influencing the plasma and, in fine, thin film synthesis, are numerous. Among them, pulse duration plays a key role in the discharge behaviour as it acts on both deposition and ionization rates. The decrease of deposition rate is the major drawback of the technique as it is only a fraction of the deposition rate measured in DC magnetron discharges. For short pulses (a few microsec.) the discrepancy between the deposition rate in HiPIMS and DC discharges tends to be less pronounced whereas ionization rate drops. On the contrary, as discharge current increases with the pulse duration (tens of microsec.), sputtering wind becomes more marked and self-sputtering can occur. The deposition rate decreases and ionization rate rises. In reactive discharges (Ar-O2), pulse duration will also play on the plasma composition and especially on the density of strongly reactive species such as O atoms. The transport of metal ions can also be discussed as it plays on the deposition rate. Results showing an increased collection speed of the metallic ions to the substrate in a hybrid discharge process - when an inductively coupled secondary plasma is superimposed to the HiPIM - are presented. Finally, the influence of the substrate electrical properties on the titanium oxide thin film properties is also important. Grounded conductive substrate (steel) leads to the formation of high-temperature stable phase of rutile while anatase is found on glass. |
8:40 AM |
H2-4 Efficiency of High-Power Pulsed Magnetron Sputtering
J. Vlcek, K. Burcalova, P. Kudlacek (University of West Bohemia, Czech Republic) High-power pulsed magnetron sputtering of copper and titanium films was systematically investigated. The depositions were performed using a strongly unbalanced magnetron system with a target of 100mm in diameter. The repetition frequency of the pulsed dc power supply (with a maximum voltage and current of 1kV and 120A, respectively) was 1kHz at a 20% duty cycle. A completely different trend in measured values of the deposition rate per average target power density obtained for these two technologically interesting materials and the same trend in their values of the ionized fraction of sputtered atoms in the flux onto the substrate (up to 56% for copper and 81% for titanium) were explained on the basis of model predictions. We present a qualitative model based on that developed recently by Christie (2005). The original model was modified and supplemented by a balance equation for secondary electrons near the sputtered target. This makes it possible to evaluate the fraction of ionized sputtered atoms directed back to the target to sustain the magnetron discharge under the experimental conditions investigated. The effects of self-sputtering of target material, losses of the target material ions during transport to the substrate and additional ionization of sputtered atoms in a plasma bulk on the deposition rate per average target power density and on the ionized fraction of sputtered atoms in the flux onto the substrate are shown. |
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9:00 AM |
H2-5 Modulated Pulse Power Technology for Protective and Tribological Coatings
R. Chistyakov (Zond, Inc.); B. Abraham (Zpulser, LLC); W.D. Sproul (Reactive Sputtering Consulting, LLC); J.J. Moore, J. Lin, I. Park (Colorado School of Mines) The new high power modulated pulse power (MPP) technology was applied to different non-reactive and reactive magnetron sputtering processes. A combination of weakly-ionized and strongly-ionized plasmas were generated in each pulse applied to the magnetron during the sputtering process. The cathode voltage modulation within the pulse controlled the ionization level of the magnetron plasma. Films of carbon, carbon nitride, titanium carbide, and titanium carbonitride have been deposited. The film structure and orientation are a function of the pulse shape and duration and the degree of ionization. Optical emission measurements show that there is a very high degree of ionization of the sputtered species, and this high degree of ionization promotes the formation of the reactive films. Possible applications for this new MPP technology for growing nano and multilayer structures will be discussed. |
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9:40 AM |
H2-7 CrN/NbN Nanoscale Multilayer Coatings with Enhanced Corrosion Resistance Achieved by HIPIMS Interface Pre-treatment
A.P. Ehiasarian, C. Reinhard, P.Eh. Hovsepian (Sheffield Hallam University, United Kingdom) Ion etching pre-treatments prior to PVD are commonly used to improve adhesion and corrosion performance by engineering the substrate/coating interface. This work compares the corrosion performance of CrN/NbN superlattice coatings grown by unbalanced magnetron sputtering and pretreated with high energy (1 keV) Nb ions produced by high power impulse magnetron sputtering (HIPIMS), HIPIMS with subsequent Nb HIPIMS interlayer and steered cathodic arc (CA) metal ion etching with CA interlayer. The discharge during the pre-treatment step was analysed by optical emission spectroscopy revealing a HIPIMS plasma dominated by singly charged Nb1+ ions and small fraction of Nb2+. CA plasma contained high fractions of 2+ and 3+ charged Nb ions. The average substrate currents for HIPIMS and CA pretreatment were ~3 mAcm-2, with peak value of 300 mAcm-2 during the HIPIMS pulse. HIPIMS pre-treatment promoted the formation of a clean and droplet-free interface and growth-defect free and dense coatings. Localized epitaxial growth of the films, as examined by cross-sectional transmission electron microscopy, resulted in significantly improved coating adhesion (LC = 56 N) compared to CA pre-treatment (LC = 45 N). Potentiodynamic polarization tests showed superior corrosion performance for the HIPIMS pre-treated coatings over CA providing passivation up to +1000 mV for SS and +660 mV for M2 substrates. The addition of HIPIMS Nb interlayer significantly reduced corrosion current densities to 4 x 10-5 Acm-2. The CA pretreatment did not exhibit corrosion passivation on either SS or HSS. The PVD CrN/NbN nanoscale multilayer coatings outperformed 20 µm thick commercial electroplated hard chrome. |
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10:00 AM |
H2-8 Growth of ZrO2 Films by High Power Pulsed Magnetron Sputtering
K. Sarakinos, C. Klever, J. Alami, M. Wuttig (RWTH Aachen University, Germany) Zirconium oxide (ZrO2) films are grown reactively by high power pulsed magnetron sputtering (HPPMS). Unipolar pulses with a constant on-time of 50 µs and off-times ranging between 200 µs and 2450 µs are applied to a Zr target. The used pulse on/off time configurations correspond to duty cycles of between 1 % and 20 % and result in target peak current densities in the range of 0.2 - 3.1 Acm-2. The effect of the O2 flow (qO2) on the target characteristics is investigated by recording the target voltage versus qO2. It is shown that the transition from the metallic to the oxidic sputtering mode shifts towards lower qO2 values as the pulse duty time is decreased. In addition, the transition region becomes smoother. Films are deposited both in the transition and in the oxidic sputtering mode at a constant average current of 1 A. The deposition rate of the films is determined by means of X-ray reflectometry (XRR). XRR shows also that smoother and denser films are obtained with increasing target peak current. The structure of the ZrO2 films is investigated by means of X-Ray diffraction. It is shown that films grown in the oxidic mode exhibit the monoclinic ZrO2 crystal structure. Finally, the optical properties of the films are investigated employing spectroscopic ellipsometry. Films grown by dc magnetron sputtering are studied for reference. |
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10:20 AM |
H2-9 HIPIMS Plasma Impedance Characterization
D. Lundin (Linköping University, Sweden); S.R. Kirkpatrick, S.L. Rohde (University of Nebraska-Lincoln); U. Helmersson (Linköping University) There are several types of high voltage, short pulse supplies available for High power Pulsed Magnetron Sputtering (HPPMS or HIPIMS) processing. Understanding the plasma and its characteristics is key to enabling the development of appropriate systems, magnetrons, and power supply designs for maximized rate and ionization. One key measure of a plasma is its impedance. A series of pressures, gases, and voltages have been monitored in HIPIMS conditions using a Chemfilt I power supply. The basic design is a 13.5 uF capacitor applied to the cathode through a thyristor. The average plasma resistivity is calculated by fitting the target voltage drop over time to the RC time constant where V(t)=V0e(-t/RC). The impedance of the plasma is found to vary by more than an order of magnitude simply by changing the applied voltage. Resistivities between 1 and 50 ohms were found for Ar at 5 mtorr. The contrasting impedances of the system clearly show a need to have a flexible supply, and a good understanding of the process to optimize power supplied to the magnetron. |
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10:40 AM | Invited |
H2-10 New Process Latitude in the Plasma Technology by HIPIMS/HPPMS using High Peak Pulse Power Supply in Unipolar, Bipolar, and DC with Additional Pulse-Combined Mode
G. Mark (MELEC GmbH, Germany); M. Vergöhl, R. Bandorf, P. Giesel (Fraunhofer Institute for Surface Engineering and Thin Films (IST), Germany); T. Wallendorf (IFU GmbH, Germany) High power pulsed magnetron sputtering using unipolar or bipolar wave forms is a novel ionized physical vapour deposition technique . The plasma space impedance compared with the pulse power supply impedance plays a key role for producing highest plasma densities. The results will be presented by coating of Titania and Carbon films .The combination of DCMS and HPPMS will be helpful to increase the deposition rate instead of HPPMS only. |