We report experimental and theoretical work to understand how oxygen intercalation changes the image potential state and surface state electronic structure in a metal/graphene interface. We use tunable angle-resolved two-photon photoemission spectroscopy to probe the evolution of the electronic band structure of an epitaxially grown monolayer graphene on Ir(111) as it undergoes through a cycle involving oxygen intercalation and deintercalation. Oxygen intercalation is carried out in situ and LEED is used to determine the crystallinity of the interface in the presence or absence of the intercalated oxygen. The image state manifold and its effective mass are examined. The photoemission intensity variation in momentum space and the observation of an oxygen induced state are discussed. Furthermore, a recently proposed effective potential model at the graphene/metal interface is developed further by us to accommodate oxygen intercalation and interpret our experimental electronic structure variation with good agreements.

We acknowledge support from the US Dept. of Energy, Office of Basic Energy Sciences, under Contract Numbers DE-FG 02-04-ER-46157, DE-FG02-90ER14104, and DESC0012704.

The ultra-high resolution of AFM was demonstrated in a Graphene/hexagonal Boron Nitride (hBN) sample evaluation conducted by AFM. The sample consisted of hBN substrate overlaid with a Graphene layer and was scanned under ambient air. The purpose of the evaluation was to assess the AFM ability to characterize the topography of the moiré pattern that was created when one layer was set on top of the other and offset by rotation. Using non-contact AFM mode and a standard AFM probe tip, the AFM was able to successfully image the moiré pattern super lattice constant of the sample in scans as large as 500 x 500 nm. In the higher magnification image taken at a scan size of 60 x 60 nm provides the clear evidence that not only are the super lattice constants of the moiré pattern about 15 nm [1] in width, but that the spacing between each striation on the moiré pattern is roughly 4-5 nm in length. Observations of such striations in Graphene/hBN systems have been previously reported [2]. This latter distance is in line with the expected tip radius curvature values for the AFM tip used to acquire all four sets of data.

[1] A. Zandiatashbar, B. Kim, Y. Yoo, and K. Lee, Microscopy Today 23(06):26-31 (2015)

[2] P. Gallagher, M. Lee, F. Amet et.al., Nature Comm. 7 10745 (2016)

Two dimensional layered transition metal dichalcogenides (2D TMD), such as MX₂ (M = Mo, W and X = S, Se), have offered exciting new physics and chemistry, as well as potential applications in energy harvesting, electronics, and optoelectronics. Surface and interface properties of these 2D materials are fundamental to further advance them on scientific exploration and device fabrication. In this talk, we will demonstrate the growth of various TMD monolayers using ambient-pressure chemical vapor deposition. The quality of a MS₂ monolayer was examined by scanning probe microscopy, electron microscopy, and optical spectroscopy. We will discuss the key issues associated with the surfaces and interfaces of these materials.

The energy positions of the valence and conduction electronic states with respect to the vacuum level are essential parameters to evaluate how the band gaps of semiconductors or Fermi-levels of metals would line up with respect to each other. Defined as an energy separation between the vacuum level and the highest occupied electronic states, the ionization energy is of particular importance for atomically-thin two-dimensional (2D) crystals to predict the performance of their heterostructures useful in high performance electronics and opto-electronics. Ionization energies have been investigated based on theoretical calculations, but to the best of our knowledge, no systematic experimental confirmation is reported for the wide range of 2D crystals despite their importance.

Here, we present a new approach to study the electronic properties of prototypical 2D crystals, graphene, MoS₂, WS₂, and MoSe₂ monolayer and multilayer flakes, supported on thick silicon oxide (SiO₂) film using a photoemission electron microscopy combined with a deep ultraviolet (DUV) illumination. We determine the band alignments of monolayer to multilayer junctions in these four materials, and show that the ionization energy decreases from MoS₂, WS₂, to MoSe₂ as predicted by density functional calculations. We postulate that the defects in SiO₂ alleviate the charging of the 2D crystals thanks to the relatively low total photoemission current due to the low energy excitation by the DUV light. This study reveals a new metrology to uncover electronic properties intrinsic to 2D crystals supported on SiO₂ substrates that interact minimally with the overlying 2D crystals.

The PEEM work was performed at the Center for Integrated Nanotechnologies, an Office of Science User Facility (DE-AC04-94AL85000). T. O. is supported by the CINT user program and Sandia LDRD. The work performed by M. B. and C. C. are supported by a U.S. DOE, Office of Energy Efficiency and Renewable Energy SunShot Initiative award for BRIDGE (DE-FOA-0000654 CPS25859). K. K. was supported by the Army Research Office MURI grant W911NF-11-1-0362. A. D. M. is supported by LANL LDRD program. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

2D materials like atomically thin transition metal dichalcogenides (TMDs) have received tremendous attentions for their unique properties and high potential applications. Recent developments on synthesis of 2D heterosrtuctures through the chemical vapor deposition (CVD) method provide an unprecedented opportunity to create and tune the intriguing electronic and optical properties of 2D materials such as engineering the band gaps. These 2D heterostructrues have a wide range of applications in electronics and optics, for example, tunneling transistors, single-photon emission devices and photovoltaic devices. To further optimize and design 2D heterostructures, it is essential to investigate the structural and electronic properties at the atomic scale, which is however still lacking.

In this presentation, we will focus on a high-quality MoS₂/WS₂ heterostructure grown on SiO₂ using the CVD method. Scanning tunneling microscopy (STM) and spectroscopy (STS) were performed to study the morphology and band structures of both MoS₂ monolayer and MoS₂/WS₂ heterobilayer. Atomically resolved STM images were obtained on the monolayer, heterobilayer and the interface between the monolayer and heterobilayer. The height histograms acquired respectively on the monolayer and the heterobilayer indicate that the heterobilayer is higher than the monolayer with a height difference of 0.85 ± 0.10 nm. The roughness of the monolayer and heterobilayer was for the first time quantified by STM. The root mean square (RMS) roughness of the heterobilayer is 0.253 ± 0.020 nm compared with 0.362 ± 0.031 nm of the monolayer. We also performed STS measurements on the system. Our STS results and density functional theory (DFT) calculations reveal the band gaps of the heterobilayer and the MoS₂ monolayer, which are similar to the previously reported results on MoS₂/WS₂ heterostructures fabricated through the mechanical exfoliation method.

Semiconductor heterojunction (HJ) band alignment is the most important factor for the functioning of the HJ-based devices. Therefore, the prediction and determination of the HJ band offset is always a scientifically interesting and technologically important topic. As the 2D materials emerged as the building blocks for the devices with molecular thickness, the determination of band alignment of the van der Waals HJs is becoming a critical issue.

Due to the nature of the molecular thickness and the lack of large area 2D crystal, a microscope with surface sensitivity is an ideal tool to study the fundamental properties of the 2D heterostructures.

In this regard, we have employed a synchrotron radiation based scanning photoelectron spectromicroscopy (SPEM) to study the chemical and electronic structures of the van der Waals HJs, include the single-layer transition metal dichalcogenides, and graphene/GaN HJs. In this presentation, I will report some of the band alignments of these 2D semiconductor heterostructures.