AVS2017 Session 2D+EM+MI+MN-MoM: Properties of 2D Materials including Electronic, Magnetic, Mechanical, Optical, and Thermal Properties
Session Abstract Book
(276KB, May 6, 2020)
Time Period MoM Sessions
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Abstract Timeline
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| AVS2017 Schedule
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8:20 AM |
2D+EM+MI+MN-MoM-1 Spontaneous Mechanical Buckling in Two-Dimensional Materials: A Power Source for Ambient Vibration Energy Harvesters
Paul Thibado, Pradeep Kumar, Surendra Singh (University of Arkansas) Internet-of-Things (IoT) is projected to become a multi-trillion-dollar market, but most applications cannot afford replacing batteries on such a large scale, driving the need for battery alternatives. We recently discovered that freestanding graphene membranes are in perpetual motion when held at room temperature [1-3]. Surprisingly, the random up-down motion of the membrane does not follow classical Brownian motion, but instead is super-diffusive at short times and sub-diffusive at long times. Furthermore, the velocity probability distribution function is non-Gaussian and follows the heavy-tailed Cauchy-Lorentz distribution, consistent with Levy flights. Molecular dynamics simulations reveal that mechanical buckling is spontaneously occurring, and that this is the mechanism responsible for the anomalous movement. Bucking in this system occurs when the local material suddenly flips from concave to convex. The higher kinetic energy associated with this motion is derived from the surrounding thermal waste heat, and it may be converted into an electrical current and used as the active component of small power generators known as ambient vibration energy harvesters. References: [1] P. Xu, M. Neek-Amal, S.D. Barber, J.K. Schoelz, M.L. Ackerman, P.M. Thibado, A. Sadeghi, and F.M. Peeters, Nature Comm. 5, 3720 (2014). [2] M. Neek-Amal, P. Xu, J.K. Schoelz, M.L. Ackerman, S.D. Barber, P.M. Thibado, A. Sadeghi, and F.M. Peeters, Nature Comm. 5, 4962 (2014). [3] M.L. Ackerman, P. Kumar, M. Neek-Amal, P.M. Thibado, F.M. Peeters, and S.P. Singh, Phys., Rev. Lett. 117, 126801 (2016). |
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8:40 AM |
2D+EM+MI+MN-MoM-2 Topological Toughening of Graphene and other 2D Materials
Bo Ni, Huajian Gao (Brown University) It has been claimed that graphene, with the elastic modulus of 1 TPa and theoretical strength as high as 130 GPa, is the strongest material. However, from an engineering point of view, it is the fracture toughness that determines the actual strength of materials, as crack-like flaws (i.e., cracks, holes, notches, corners, etc.) are inevitable in design, fabrication and operation of practical devices and systems. Recently, it has been demonstrated that graphene has very low fracture toughness, in fact close to that of ideally brittle solids. These findings have raised sharp questions and are calling for efforts to explore effective methods to toughen graphene. Recently, we have been exploring the potential use of topological effects to enhance the fracture toughness of graphene. For example, it has been shown that a sinusoidal graphene containing periodically distributed disclination quadrupoles can achieve a mode I fracture toughness nearly twice that of pristine graphene. Here we report working progresses on further studies of topological toughening of graphene and other 2D materials. A phase field crystal method is adopted to generate the atomic coordinates of material with specific topological patterns. We then perform molecular dynamics simulation of fracture in the designed samples, and observe a variety of toughening mechanisms, including crack tip blunting, crack trapping, ligament bridging, crack deflection and daughter crack initiation and coalescence. |
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9:00 AM |
2D+EM+MI+MN-MoM-3 Ferroelectric Domain Control of Photoluminescence in Monolayer WSe2 / PZT Hybrid Structures
Berry Jonker, Connie Li, Kathleen McCreary (Naval Research Laboratory) Single monolayer transition metal dichalcogenides (TMDs) exhibit exceptionally strong photoluminescence dominated by a combination of distinct neutral and charged exciton contributions. The dielectric screening is very low due to their two-dimensional character relative to bulk material, and their properties are thus strongly affected by their immediate environment. Because the exciton and trion binding energies are very large (~ 600 meV and ~30 meV, respectively), these characteristic emission features persist to room temperature. The samples were fabricated by mechanically transferring large area monolayer WS2 grown by a CVD process onto 100 nm thick lead zirconium titanate (PZT) films on a conducting n-type strontium titanate wafer. We show here that the surface charge associated with ferroelectric domains patterned into the PZT film with a conductive atomic force microscope laterally control the spatial distribution of neutral and charged exciton populations in the adjacent WS2 monolayer [1]. This is manifested in the intensity and spectral composition of the photoluminescence measured in air at room temperature from the areas of WS2 over a ferroelectric domain with polarization dipole pointed either out of the surface plane or into the surface plane. The photoluminescence from areas of the WS2 over up polarization domains in the PZT are dominated by neutral exciton emission, while those over down domains are dominated by trion emission, consistent with the corresponding charge produced by the domains at the WS2 / PZT interface. The hysteretic character of ferroelectric materials means that the TMD properties can be selectively reconfigured in a nonvolatile manner by changing the state of the ferroic substrate. This approach enables spatial modulation of TMD properties with a spatial resolution determined by the polarization domains in the underlying ferroelectric layer, with the potential for fabrication of lateral quantum dot arrays or p-n junctions in any geometry of choice. [1] C.H. Li, K.M. McCreary and B.T. Jonker, ACS Omega 1, 1075 (2016). This work was supported by core programs at NRL and the NRL Nanoscience Institute, and by the Air Force Office of Scientific Research #AOARD 14IOA018-134141. |
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9:20 AM |
2D+EM+MI+MN-MoM-4 Mechanical Instability-driven Architecturing of Atomically-thin Materials
SungWoo Nam (University of Illinois at Urbana-Champaign) Mechanical deformations, such as buckling, crumpling, wrinkling, collapsing, and delamination, are usually considered threats to mechanical integrity which are to be avoided or reduced in the design of materials and structures. However, if materials systems and applied stresses are carefully controlled, such mechanical instabilities can be tailored to deterministically create functional morphologies that can enable powerful new functions. In particular, in atomically-thin material systems with ultralow bending stiffness, such as graphene, mechanical deformations enable new structural properties and device-level functionalities which surpass the limits of bulk material systems. In this talk, I will present our manufacturing technique on controlled deformation and straining of atomically-thin materials, and the emergent materials properties and applications of such deformed and strained atomically-thin materials. First, I will introduce shrink-manufacturing approaches to enable controlled deformation of atomically-thin materials. Second, I will introduce a wide range of new material properties enabled by the new class of ‘architectured atomically-thin materials’. I will discuss the surface plasmonics enabled by crumpled topographies of graphene and will further discuss shape reconfigurability which opens the door to tunable plasmonic resonance of crumpled graphene. In addition, I will share our ongoing research efforts on strained superlattice for the modulation of electronic properties. Third and last, I will present our work on adaptive/conformal and multifunctional electronics based on mechanically deformed atomically-thin materials. Our optoelectronic sensor is based exclusively on graphene and transforms the two dimensional material into three dimensional (3D) crumpled structures. This added dimensionality enhances the photoabsorption of graphene by increasing its areal density with a buckled 3D structure, which simultaneously improves device stretchability and furthermore enables strain-tunable photoresponsivity. Our approach to manufacturing architectured atomically-thin materials offers a unique avenue for enabling new materials properties and engineering of advanced device functions. |
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9:40 AM | Invited |
2D+EM+MI+MN-MoM-5 Excitons and Exciton Complexes in Transition Metal Dichalcogenide Monolayers
Mark Hybertsen (Brookhaven National Laboratory) Ultra-thin semiconductor crystals, realized from transition metal dichalcogenides and other Van der Waals materials, exhibit fascinating optical properties. In the limit of a single monolayer of material, the Coulomb interactions between the optically excited electrons and holes are particularly strong and specifically deviate in functional form from that familiar from bulk semiconductors (1/εr) [1]. In combination with the reduced dimensionality, the resultant interaction effects are an order of magnitude stronger than those that were previously observed in quantum well structures realized in epitaxially grown multilayers. The lowest energy excitations created by optical excitation are bound electron-hole pairs (excitons). The binding energy is on the 0.5 eV scale and the ladder of bound state energies observed deviate significantly from the spectrum predicted by the conventional hydrogenic model [2]. In the presence of excess carriers, the excitons also form a bound complex with either an excess electron or hole (trions) [1]. As the density of optically excited excitons is increased, pairs of bound excitons form (biexcitons), with a clear spectroscopic signature [3]. All of these characteristics of excitons and exciton complexes in transition metal dichalcogenides can be understood directly from the strong and modified form of the Coulomb interaction, including both the role of the environment and the impact of the intrinsic screening response of the material. In particular, a model Hamiltonian can be fully determined from microscopic inputs and solved for the properties of the observed excitons and associated complexes. Variational solutions are semiquantitative while supplying insight. A Monte Carlo approach solves the model Hamiltonian numerically exactly and gives quantitative relationships among the exciton and exciton complex binding energies [4]. Extensions of these approaches to understand excited states in more complex combinations of such layered materials will also be discussed. Work performed in part at the CFN, which is a U.S. DOE Office of Science Facility, at BNL under Contract No. DE-SC0012704 and with resources from NERSC under Contract No. DE-AC02-05CH11231. [1] T. C. Berkelbach, M. S. Hybertsen, and D. R. Reichman, Phys. Rev. B 88, 045318 (2013). [2] A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, Phys. Rev. Lett. 113, 076802 (2014). [3] Y. You, X.-X. Zhang, T. C. Berkelbach, M. S. Hybertsen, D. R. Reichman, and T. F. Heinz, Nat. Phys. 11, 477 (2015). [4] M. Z. Mayers, T. C. Berkelbach, M. S. Hybertsen, and D. R. Reichman, Phys. Rev. B 92, 161404 (2015). |
10:20 AM | BREAK | |
11:00 AM |
2D+EM+MI+MN-MoM-9 Mechanical Properties of Polycrystalline and Defective Graphene
Joseph Gonzales, Ivan Oleynik, Jonathan Willman (University of South Florida); Romain Perriot (Los Alamos National Laboratory) Experimental investigation of mechanical properties indicates that the polycrystalline graphene grown by chemical vapor deposition is as strong as pristine. Recent experiments involving nanoindentation of graphene have also demonstrated counterintuitive increasing of Young’s modulus with increasing concentrations of point defects. Using accurate description of interatomic interactions provided by novel screened environment-dependent bond order, (SED-REBO) potential, we performed large-scale molecular dynamics investigations of mechanical properties of polycrystalline and defective graphene samples under conditions mimicking nano-indentation AFM experiments. The atomically resolved characterization of the stress and strain distributions under indenter are used to understand fundamental mechanisms of graphene strength and failure. The breaking strength, the crack initiation and propagation are investigated as a function of the grain boundary structure, grain size distribution, concentration of point defects as well as the position of the indenter in respect to these extended and point defects. |
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11:20 AM | Invited |
2D+EM+MI+MN-MoM-10 Properties of Single Layer Transition Metal Dichalcogenides Grown by Van der Waals Epitaxy
Matthias Batzill (University of South Florida) It is well documented that the electronic properties of transition metal dichalcogenides (TMDs) vary as their dimensions are reduced to a single layer. Also, variations depending on the substrate have been reported. In our studies we grow single- to few- layers of TMDs by molecular beam epitaxy on van der Waals substrates (mainly HOPG or bulk-MoS2). Despite the weak interactions between the monolayer and the substrate the film grows rotational aligned so that a film exhibits a single crystal orientation. This enables for example electronic structure characterization by angle resolved photoemission spectroscopy. The versatile growth procedure allows us to characterize many materials systems. First we discuss the role of the substrate for semiconducting TMDs. We study the electronics structure variation for MoSe2 grown on another TMD (MoS2) and compare it with that grown on HOPG. While the band dispersion of MoSe2 on HOPG resembles the expectations for free-standing MoSe2 it is modified for MoSe2/MoS2 due to interlayer hybridization of the chalcogen p-orbitals. A big advantage of MBE growth in vacuum is that it enables the synthesis and study of more reactive systems – like most metallic TMDs. Thus, in the second part of this talk we investigate the properties of single layer TiSe2. TiSe2 is an unconventional charge density wave (CDW) material whose charge density wave transition has been associated with an excitonic insulator phase. Such an excitonic insulator is formed spontaneously if the excitonic binding energy exceeds the band gap and thus formation of excitons may become the ground state. By scanning tunneling spectroscopy we observe significant increase in the CDW-band gap opening at the Γ-point for the monolayer compared to few-layer materials. Furthermore, the opening of the gap varies with the substrate material, consistent with expectations for excitonic binding energies. Interestingly, we observe coherence peaks in the tunneling spectra below 50 K suggesting the formation of an excitonic condensate. |