ALD2017 Tuesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Tuesday, July 18, 2017 | ||||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | 4:30 PM | ||||||||||||
| AA1-TuA |
Highly Improved Performance of High Voltage ALD Coated Cathodes Showing Minimal Capacity/Voltage Fade at 4.8V
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Physical and Electrochemical Effects of Post-deposition Annealing on Atomic Layer Deposited Al2O3 Coatings on LiNi0.5Mn0.3Co0.2O2
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Novel Mechanism of Atomic Layer Deposition Al2O3 on LiMn2O4 for High Capacity Lithium-ion Batteries
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Atomic Layer Deposition of Superionic Solid-State Electrolytes for Lithium Batteries
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Cubic Garnet Li7La3Zr2O12 Solid Lithium Electrolyte by ALD
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Improving Interfacial Stability of Sulfide-Based Lithium-Ion-Conducting Solid Electrolytes with ALD
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Atomic Layer Deposition of Solid-State Electrolytes for All-Solid-State Lithium Ion Batteries
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Highly Stable WS2 Thin Film Anode Grown by Plasma-enhanced Atomic Layer Deposition (PEA LD ) for Na-ion Battery
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Coffee Break
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ALD-Tin Oxide as Impermeable Electron Extraction Layers for Temperature Stable Roll-to-Roll-Compatible Perovskite Solar Cells
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Nano-Structured Ceramic ALD Coatings to Stabilize SiC Against Reaction in High Temperature Steam
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Mechanical, Physical, and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition of TiVN
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| AA2-TuA |
ALD as an Enabler of Self-aligned Multiple Patterning Schemes
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Thin Film Dopant Sources Grown by PALD for Shallow Semiconductor Doping
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Effective Work-Function of PEALD Metal Nitrides and its Tuning by Co-deposition
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Surface Morphology, Crystallinity and Electrical Properties of Some Rare-earth Oxide ALD Films
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Atomic Layer Deposition of High-k Oxide Films from La(NO33·6H2O Solution Oxidant
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Great Enhancement of Dielectric Constant via High Temperature Annealing ALD Bi-layered Oxides
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Atomic Layer Deposition of Novel Interface Layers on III-V Channel Devices
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Coffee Break
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ZrO2 as a High-k Gate Dielectric for Enhancement-mode AlGaN/GaN MOS HEMTs
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Investigation of High-quality Silicon Nitride (SiNx) Thin Film Grown by Low-temperature Hollow Cathode Plasma-Enhanced ALD as a Gate Dielectric for AlGaN/GaN MIS-HEMTs
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Atomic Layer Annealing for Atomic Layer Epitaxy of AlN Ultrathin Films at a Low Growth Temperature
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| AM+ |
Large Area Spatial Atmospheric ALD
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Low Resistivity Titanium Nitride ALD: Low Temperature Enabled by the Use of Ultra-High Purity Hydrazine
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Modeling Ampoule Performance for Low Vapor Pressure Precursor Delivery
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An innovative chamber designed for ALD, PECVD and FAST® SiO2 processes: towards high throughput and conformal deposition at low temperature
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Growth Rates During Silicon Spatial Electron-Enhanced Atomic Layer Deposition: Role of Dangling Bond Lifetime
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Spatial Atomic Layer Deposition of Gate Encapsulation Silicon Nitride for Self-Aligned Contact Enablement
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Fast Atomic Layer Deposition Process for Thin-Film Encapsulation of Organic Light-Emitting Diodes
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Flexible Functional Devices at Mass Production Level with the FLEx R2R sALD Platform
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Coffee Break
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All-Organic Spatial MLD: Troubleshooting Deposition onto Porous Substrates
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Graphene Oxide Functionalization by Molecular Layer Deposition
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Contrast Enhancement of Biological Nanoporous Materials with Zinc Oxide Infiltration for Electron and X-ray Nanoscale Microscopy
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