Naphthalocyanines (Ncs) are promising candidates for future components in electronic devices and applications. To maximize the efficiency of Nc devices, it is critical to understand their structural and electronic properties and how these are impacted by deposition methods. The formation of a metal free naphthalocyanine (H₂Nc) self-assembled monolayer on a Au(111) crystal was investigated by scanning tunneling microscopy under ultra-high-vacuum conditions at room temperature. A rigorous purification and processing procedure was developed to produce high purity, low defect, and well-ordered monolayers. High-resolution STM images reveal epitaxial growth of H₂Nc on Au(111) with the observed structure having a molecular spacing of 1.6 ± 0.05 nm, with molecules orientated slightly off (roughly 2.5°) the low density packing direction of Au(111). A commensurate structure having 4 molecules per unit cell and unit cell parameters of A = 3.25 ± 0.05 nm, B = 3.17 ± 0.05 nm, and α = 87.5 ± 2° is proposed. Orbital-mediated tunneling spectroscopy was used to examine the electronic properties of individual molecules within the thin film. The first ionization potential and electron affinity of H₂Nc adsorbed on Au(111) were measured to be −0.68 ± 0.03 and 1.12 ± 0.02 eV, relative to the Fermi energy.

Here we investigate how charge transport properties at metal-semiconductor interfaces scale down to the nanoscale regime, comparing the properties to macroscopic interfaces and providing a perspective on what it means to device manufacturing. Strontium titanate - the prototypical oxide material - has been widely studied for applications in thermoelectrics, nanoelectronics, catalysis, and other uses, and behaves as an n-type semiconductor when doped. We investigated how charge transport is effected at interfaces to stronitium titanate under a wide range of conditions - by varying contact size, interface shape, dopant concentration, and surface structure and in various combinations. The results of the analysis have wide ranging implications, especially for ferroelectric oxide materials and serves as the basis for understanding and controlling switching effects - both polarization and oxygen migration based switching.

Graphene grown epitaxially on silicon carbide conforms to nanofacetted step edges, even for step heights of many nanometers. The “sidewall” nanoribbons that result show astounding transport characteristics (~15 um ballistic length at room temperature), as demonstrated by others,¹ but the physical basis for these results is still not certain. In our STM measurements of sidewall nanoribbons, we find an extended 1D region with electronic structure much different than 2D graphene. Spectroscopic results on graphene near nanofacet corners indicate a strain gradient and a rapid change in the doping. Such strong gradients may be key to understanding the ballistic transport in this system. P

¹J. Baringhaus, M. Ruan, F. Edler, A. Tejeda, M. Sicot, AminaTaleb-Ibrahimi, A.-P. Li, Z. Jiang, E. H. Conrad, C. Berger, C. Tegenkamp and W. A. de Heer, “Exceptional ballistic transport in epitaxial graphene nanoribbons,” Nature, 506, 349 (2014).

The quest for novel two-dimensional (2D) materials has led to the discovery of hybrid heterostructures of graphene and other 2D atomic films [1]. These heterojunctions provide us fascinating playground for exploring electronic and transport properties in 2D materials. Even in graphene itself, there usually exist large amount of extended topological defects, such as grain boundaries, changes in layer thickness, and substrate steps, which divide graphene into grains and domains. These interfaces and boundaries can break the lattice symmetry and are believed to have a major impact on the electronic properties, especially the transport, in 2D materials.

Here, we present our recent study on an asymmetric electron transport upon bias polarity reversal at individual monolayer-bilayer (ML-BL) boundaries in epitaxial graphene on SiC (0001), revealed by multi-probe scanning tunneling potentiometry [2,3]. A greater voltage drop is observed when the current flows from monolayer to bilayer graphene than in the reverse direction, and the difference remains nearly unchanged when bias exceeds a threshold. A thermovoltage is measured across the boundary due to the thermopower difference between the two sides, which however is too small to account for the observed asymmetry. Interestingly, this asymmetry is not from a typical nonlinear conductance due to electron transmission through an asymmetric potential. Rather, it indicates the opening of an energy gap at the Fermi energy. Our theoretical analysis finds that Friedel charge oscillation opens a gap for electrons with wave vectors perpendicular to the boundary. The Friedel gaps are different on the monolayer and bilayer sides, which can shift under bias and lead to asymmetric transport upon reversing the bias polarity. A quantitative agreement is seen between experiment and theory on both the sign and the magnitude of the asymmetry.

1 “Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges”, L. Liu, J. Park, D. A. Siegel, K. F. McCarty, K. W. Clark, W. Deng, L. Basile, J.-C. Idrobo, A.-P. Li, G. Gu, Science343, 163-167 (2014).

2 “Spatially Resolved Mapping of Electrical Conductance around Individual Domain (Grain) Boundaries in Graphene”, K. W. Clark, X.-G. Zhang, I. V. Vlassiouk, G. He, R. M. Feenstra, and A.-P. Li, ACS Nano. 7 (9), 7956-7966 (2013).

3 “Friedel Oscilation-Induced Energy Gap Manifested as Transport Asymmetric at Monolayer-Bilayer Graphene Boundaries”, K. W. Clark, X.-G. Zhang, G. Gu, G. He, R. M. Feenstra, and A.-P. Li, arXiv: 1401.1796, Physical Review X4 (1), 011021 (2014).

Transition metal dichalcogenides like molybdenum disulphide (MoS₂) have attracted great interest as candidate to fill the need of 2 dimensional semiconductor materials. By controlling the thickness, the bandgap of MoS₂ thin films can be tuned from 1.2 eV (bulk material, indirect bandgap) to 1.8 eV (monolayer film, direct bandgap). Recently, researchers succeeded in growing monolayered MoS₂ by chemical vapor deposition (CVD) on silicon dioxide (SiO₂) substrate, showing the possibility of low cost scalable device fabrication. However, the mobility reported on exfoliated MoS₂ monolayers exceeds 200 cm².V^-1.s^-1, whereas the measurements realized on CVD growth MoS₂ monolayers reveal a mobility value that is usually 1-2 orders of magnitude lower. Here, we study the transport properties of CVD-grown monolayer on SiO₂/Si substrate. We directly measure the resistivity and the mobility of the material with a field-effect transistor architecture by using a cryogenic four-probe scanning tunneling microscope (STM), the Si substrate being used as back-gate. In order to ensure reliable electrical contacts, we fabricate platinum pads (4x4 µm²) on individual MoS₂ crystal domains by using an electron-beam induced deposition technique. The combination of the STM scanners and a scanning electron microscope (SEM) enables us to connect the STM tips on those pads and thereby establish the contacts on this material without any subsequent lithography process, avoiding contaminations introduced by other technological steps. An electron hopping process in localized charge trapping states appears to dominate the transport behavior. We performed temperature-dependent measurements in the range of 82 K to 315 K which demonstrate a variable range hopping (VRH) transport with a very low mobility. Furthermore, the effects of electronic irradiation are examined by exposing the film to electron beam in the SEM in an ultra-high vacuum environment. We found that the irradiation process affect the mobility and also the carrier concentration of the material, with conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects such as vacancies and antisites create charge trapping states, leading to the low mobility. This is consistent with recent density functional theory calculations where these defects are shown to create localized gap states that can act as scattering centers and thereby reduce the mobility.

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266401 (2012).