Graphene is a newly discovered material composed of two-dimensional array of hexagonal carbon atoms. It has a number of unique electronic properties, the most remarkable of which is the zero band-gap light-like linear electronic dispersion, giving rise to Dirac fermions. This feature can be used to make devices based on previously unexplored physical properties. For example, in analogy to optics, we describe new devices based on optics-like manipulation of electrons.

Our devices are based on graphene and bi-layer graphene p-n junctions doped using electrostatic doping techniques from buried split gates. In the present context, graphene p-n junctions do not rectify, i.e. behave as semiconductor diodes. Instead, in graphene p-n junctions, carriers launched from a point contact from one side of the junction are able to refocus back to a point on the other side of the junction. This behavior, known as the Veselago effect, can be the basis for new logic devices for replacing Si CMOS. In addition, using the same platform, we describe interconnect structures that can be reconfigured. Together, we envision a new circuit paradigm based on components that seamlessly reconfigure between devices and interconnect components.

Graphene has shown successful application in RF transistors and frequency doublers where its high mobility and high saturation velocity translate into operation at high frequencies while utilizing little power. However, a major detraction to graphene development for other device applications is that it does not have a band gap. The lack of a band gap means that graphene’s current cannot be turned off. Bilayer graphene is regarded as one possible solution to this problem, since bilayer graphene is capable of developing a band gap if the symmetry of the system can be broken. That said, bilayer graphene (from exfoliation or growth) forms a highly ordered A-B stack of the two graphene sheets resulting in little to no band gap, unless a high electric field can be applied.

In this presentation, we will demonstrate a novel method for creating bilayer graphene where a single layer of CVD graphene grown on Cu is bonded to a single layer of epitaxial graphene grown on Si-face SiC. This process results in a bilayer system that has a built-in asymmetry that yields unique physical and electrical properties not previously observed. For example, we demonstrate that the transfer of CVD graphene to epitaxial graphene results in a smoother morphology than transfer onto SiO2 and that bonding of CVD graphene to epitaxial graphene can avoid the damage caused by the drying step necessary in the poly (methyl methacrylate) transfer method. X-ray photoelectron spectroscopy and Raman microscopy demonstrate that the sheets are coupled together but strained differently, in contrast to a naturally formed bilayer. Electrical characterization of Hall devices fabricated on the novel bilayer show higher mobilities and lower carrier concentrations than the individual CVD graphene or epitaxial graphene sheets alone. Modeling of the electric field produced by opposite doping in the graphene sheets will also be presented, as CVD graphene is typically p-type and epitaxial graphene is typically n-type.

Electric fields were applied to a bilayer graphene to generate a band gap using an ionic-liquid gate instead of the general top-gate structures. The ionic-liquid gate can apply higher electric field than other type of the gates because of its large capacitance and electric strength. In this abstract, the graphene layers were extracted from kish graphite by a mechanical exfoliation and were put on highly n-doped Si substrates covered with a 300-nm-thick SiO₂ layer. Side-gate electrodes were patterned approximately 20 mm away from the channels. An ionic liquid (DEME-TFSI) was put on the bilayer graphene and the side-gate electrode. Electrical characteristics at 300 K revealed that the electrical double layer in the ionic-liquid, which works as a very thin insulator, had 200 times larger capacitance than a 300-nm-thick SiO₂ layer. The thickness of electrical double layer was estimated to be 3.75 nm. In electric field dependence measurements, an increase in a sheet resistance of the bilayer grapheme channel was clearly observed with increasing the magnitude of electric field in bilayer graphene. On the other hand, the increase in the sheet resistance didn’t appear in the monolayer- and trilayer- graphene. That is why the increasing of the sheet resistance was caused by a band gap generated in ionic-liquid gated bilayer graphene by the electric field.

Graphene films grown by chemical vapor deposition on copper foils and exfoliated graphene flakes were hydrogenated using low kinetic energy plasma processing. The film sheet resistance can be tuned over a wide range (1 kΩ/square – 300 kΩ/square), increasing proportionally with hydrogen coverage. Variable temperature measurements demonstrate a transition from semi-metallic behavior for graphene to semiconducting behavior for hydrogenated graphene. Sheet resistance measurements as a function of temperature also suggest the emergence of a band gap in the hydrogenated graphene films. Interesting surface doping effects will be discussed in conjunction with the location of the charge neutrality point. This work was supported by the Office of Naval Research.

First principles pseudopotential plane wave method was used to study ground state electronic properties of Graphene, hexagonal Boron Nitride (h-BN), Graphene doped with Boron and Nitrogen, and multilayers of Graphene and h-BN. Our results on doped Graphene indicate that upon electron (hole) doping, the Dirac-point in the electronic bandstructure shifts below (above) the Fermi level and a gap appears at the high-symmetric K-point. Upon co-doping of Graphene by both Boron and Nitrogen a small energy gap between the conduction and valence band appears at the Fermi level, making the CBN nanomaterial a narrow band semiconductor. The energy gap depends sensitively on the degree of doping and on the thickness of CBN layer. These results are in agreement with recent experimental measurements [1,2]. Our bandstructure calculations on the multilayers of Graphene and h-BN indicate that these nanostructured multilayers exhibit semiconducting behaviour with band gap in the range 60-600 meV depending on the relative orientation and thickness of the layers. (Author: Sugata Mukherjee, work done in collaboration with T.P. Kaloni)

1. X. wang et al, Science 324, 768 (2009)

2. L. Cie et al, Nature Materials 9, 430 (2010).