Atomic layer deposition (ALD) has great benefits over other deposition techniques since its growth mechanism controlled by a self-limited surface reaction exhibits excellent conformality, large area uniformity, and atomic scale thickness controllability. In particular, ALD becomes increasingly more promising thin film deposition method for future flexible electronics. Recently, there have been many research efforts on the investigation of doped ZnO for transparent conducting oxides (TCOs) due to their higher mobility than that of undoped ZnO. Ga doped ZnO (GZO) is one of the promising material for substitution of ZnO. As a representative TCO for applications to the transparent thin film transistor (TTFT) or flexible electronic, GZO thin films by PVD or CVD have been extensively studied. Nevertheless studies on GZO films grown by ALD at low temperature condition which can be applied to flexible devices were still not carried out as far as we know in spite of its potential importance. Hence, for this study, we investigated the growth characteristics and film properties of low temperature ALD (LT-ALD) GZO films by varying deposition method. Field emission scanning electron microscopy (FE-SEM) observation of the GZO films deposited on 5:1 via patterns showed that the film has excellent conformality with over 95 % coverage even at room temperature growth. Additionally, the chemical and microstructural analysis was studied by various analytical techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscope (AFM). Also spectrophotometer was used to measure a transmittance of the film and showed high transmittance that could be applicable to transparent devices.

Ga-doped ZnO (GZO) film is one of promising candidates as substitute for ITO transparent electrodes in optoelectronic devices. Control of structural properties, especially c-axis orientation, is crucial issue to improve electrical properties of polycrystalline GZO films on glass or plastic substrates [1]. Recently, nanosheet seed layers were proposed to control crystal orientation of oxide films on amorphous substrates [2]. In this study, we employed a seed layer of tungsten oxide nanosheets with two-dimensional hexagonal lattice structure for deposition of GZO thin films on unintentionally heated glass substrates.

The nanosheets were assembled on glass substrates by Langmuir-Blodgett method. The GZO films with thickness of 100 nm were deposited by an ion-plating with direct current arc discharge on unintentionally heated glass substrates with and without the nanosheet seed layers.

The crystal structural properties were characterized by x-ray diffraction measurements. The c-axis orientation of the GZO films was drastically enhanced by the nanosheet seed layers. The intensity of (002) diffraction peak of GZO films deposited with the seed layers was about 40 times as strong as that deposited without the seed layers. The degree of c-axis orientation was evaluated by the (002) x-ray rocking curve (XRC). The full-width half-maximum of XRC of the GZO films on the nanosheet seed layers was 2.6 °, which is even lower than that of GZO films deposited on bare glass substrate at 200 °C.

The electrical properties were characterized by Hall effect measurements at room temperature. The GZO films deposited on the nanosheet seed layers showed the resistivity of 2.9 x10^-4 Ωcm with the Hall mobility of 24 cm²/Vs and the carrier concentration of 9.0×10²⁰ cm^-3. On the other hand, the GZO film deposited without the nanosheet seed layers showed the resistivity of 5.0 x10^-4 Ωcm with the Hall mobility of 17 cm²/Vs and the carrier concentration of 7.2×10²⁰ cm^-3. Both the Hall mobility and the carrier concentration were improved by the nanosheet seed layers.

[1] T. Yamada et al., J. Appl. Phys. 107, 123534 (2010). [2] T. Shibata et al., Adv. Mater. 20, 231 (2008).

Nb-doped TiO₂ has been identified as a potential indium-free transparent conductor, and has been fabricated by pulsed laser deposition and sputtering with good success.^1,2 Other deposition methods, such as electron beam evaporation, are of interest for this material but have had limited demonstration to date. It would be advantageous to be able to use electron beam evaporation because in addition to planar films, the collimated flux allows for structured thin films via glancing angle deposition (GLAD). Composition control is essential for doped functional materials, which is typically difficult to obtain through physical mixing of source materials. Here we show that using a sol gel approach to prepare the source materials provides a possible route to circumvent this issue. The facile, solution based sol gel process for the synthesis of ceramic and glassy materials allows for precise composition control by controlling the amounts and ratios of the metal oxide precursors. A sol gel methodology was used to prepare a series of Nb-doped TiO₂ deposition source materials with the following compositions: Nb_0.06Ti_0.94O₂, Nb_0.12Ti_0.88O₂, and Nb_0.24Ti_0.76O₂. We will show that XPS results confirm the composition of the electron beam deposited films and reflects the composition of the source materials. Premixed powders of Nb₂O₅ and TiO₂ do not show the same translation of composition as the sol-gel derived source material. Details on the effects of the post-deposition annealing environment on the thin film optical and electrical properties will also be presented.

References:

1. Yamada, N.; Hitosugi, T.; Hoang, N. L. H.; Furubayashi, Y.; Hirose, Y.; Konuma, S.; Shimada, T.; Hasegawa, T. Thin Solid Films 2008, 516, 5754-5757.

2. Ishida, T.; Okada, M.; Tsuchiya, T.; Murakami, T.; Nakano, M. Thin Solid Films 2011, 519, 1934-1942.

Colloidal ITO based inks may be an attractive route to direct writing transparent circuits and also be useful for the fabrication of transparent conductive ITO films on complex shaped substrates. The presence of stabilizing ligands and minimal contact between the ITO nanoparticles in the deposited films can be a challenge in obtaining the optimum electrical properties. This study investigates the effect of plasma treatment and annealing on the electrical properties of colloidal ITO films. Crystalline colloidal ITO nanoparticles were synthesized in-house by a non-aqueous technique. The solutions were spin coated onto glass and quartz substrates and their electrical and optical properties were evaluated. All films were found to be completely transparent, while the as-deposited films had resistivities more than 10⁸ ohm-cm. Plasma treatments were shown to be effective in removing residual organics in the films, and even without annealing, some recipes were able to reduce the film resistivity by more than four orders of magnitude. Plasma treatments, when done in combination with annealing, resulted in films with resistivities less than 1 ohm-cm.