Emerging Thin Film Materials: Ultra-wide Bandgap and Phase Change Materials (TF+EM-WeA)
Wednesday, Oct 23 2019 2:20PM, Room A215
Moderated by: Cary Pint, Vanderbilt University; Brent Sperling, National Institute of Standards and Technology (NIST); Jin-Seong Park, Hanyang University, Korea
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
2:20 PMTF+EM-WeA-1MOCVD Growth and Characterization of ZnGeN2-GaN Alloy Films
2:40 PMTF+EM-WeA-2Device Quality β-Ga2O3 and Related Alloys by MOCVD
3:00 PMTF+EM-WeA-3Development of the β-(AlxGa1-x)2O3/β-Ga2O3 (010) Heterostructures by Plasma-assisted Molecular Beam Epitaxy
4:20 PMTF+EM-WeA-7Phase-Change Memory: A Quest from Material Engineering Towards the Device Performances
5:00 PMTF+EM-WeA-9Neuromorphic Materials and Architectures for Dynamic Learning and Edge Processing Applications
5:20 PMTF+EM-WeA-10Atomic Layer Deposited VO2 Thin Films Towards Modulated Infrared Optoelectronic Devices
5:40 PMTF+EM-WeA-11Deposition Process for Vanadium Dioxide Thin Films for RF Applications
6:00 PMTF+EM-WeA-12Low Power, Microwave Solid State Oscillators Based on Phase Change Materials
Page size:
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