Plasma Modeling (PS2-MoM)
Monday, Oct 21 2019 8:20AM, Room B130
Moderated by: Mingmei Wang, TEL Technology Center, America, LLC; Nathan Marchack, IBM T.J. Watson Research Center
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
8:20 AMPS2-MoM-1Computational Modeling of Capacitively Coupled Plasmas at Moderate Pressures in gases of Argon, Helium and Nitrogen
8:40 AMPS2-MoM-2Relation between Atomic Interaction Parameters of a Surface Material and its Physical Sputtering Yield; How to Predict the Etching Rate based on the Surface Material Properties
9:00 AMPS2-MoM-3Investigation on the Uniformity Control of the Electron and the Ion Kinetics in a Capacitively Coupled Plasma Reactor using a Parallelized Particle-in-Cell Simulation
9:40 AMPS2-MoM-5Capacitively Coupled Plasma Uniformity Improvement Using Phase and Amplitude Control of Electrode Potential
10:00 AMPS2-MoM-6Kinetic Modeling of Non-Equilibrium Plasmas for Modern Applications
10:40 AMPS2-MoM-8Automated Reduction of Plasma Chemistry Sets
11:00 AMPS2-MoM-9Prediction of Etch Rates for New Materials by Machine Learning - Case Study for Physical Sputtering
11:20 AMPS2-MoM-10Maskless and Contactless Patterned Silicon Deposition using a Localized PECVD Process
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