Plasma-Surface Interactions (PS+AS+EM+SS+TF-MoA)
Monday, Oct 21 2019 1:40PM, Room B130
Moderated by: Sebastian Engelmann, IBM T.J. Watson Research Center; Sumit Agarwal, Colorado School of Mines
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
1:40 PMPS+AS+EM+SS+TF-MoA-1Cleaning Chamber Walls after ITO Plasma Etching Process
2:00 PMPS+AS+EM+SS+TF-MoA-2Plasma Resistance of Sintered Yttrium Oxyfluoride (YOF) with Various Y, O, and F Composition Ratios
2:20 PMPS+AS+EM+SS+TF-MoA-3Understanding Atomic Layer Etching: Thermodynamics, Kinetics and Surface Chemistry
3:00 PMPS+AS+EM+SS+TF-MoA-5Comparison of Silicon Surface Chemistry between Photo-Assisted Etching and Ion-Assisted Etching
3:20 PMPS+AS+EM+SS+TF-MoA-6Chemical Reaction Probabilities in the Etching of Si by Fluorine Atoms Produced in a Mixture of NF­3/SF6 Plasma
4:00 PMPS+AS+EM+SS+TF-MoA-8John Thornton Memorial Award Lecture: Low Temperature Plasma-Materials Interactions: Foundations of Nanofabrication And Emerging Novel Applications At Atmospheric Pressure
4:40 PMPS+AS+EM+SS+TF-MoA-10Determining Surface Recombination Probabilities during Plasma-enhanced ALD using Lateral High Aspect Ratio Structures
5:00 PMPS+AS+EM+SS+TF-MoA-11Study of Plasma-Photoresist Interactions for Atomic Layer Etching Processes
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