Plasma Deposition and Plasma-Enhanced Atomic Layer Deposition (PS+2D+SE+TF-FrM)
Friday, Oct 25 2019 8:20AM, Room B130
Moderated by: Chenhui Qu, University of Michigan; David Boris, U.S. Naval Research Laboratory
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
8:20 AMPS+2D+SE+TF-FrM-1Plasma-based Synthesis of 2D Materials for Devices on Flexible Substrates
9:00 AMPS+2D+SE+TF-FrM-3Homogeneous Ternary Oxides of Aluminum with Silicon, Molybdenum, and Niobium by Plasma Enhanced ALD by Sequential Precursor Pulses
9:20 AMPS+2D+SE+TF-FrM-4Piezoelectric Response of ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
10:00 AMPS+2D+SE+TF-FrM-6Plasma-enhanced Molecular Layer Deposition of Boron Carbide from Carboranes
10:20 AMPS+2D+SE+TF-FrM-7Gas Phase Kinetics Optimization Study for Scaling-up Atmospheric Pressure Plasma Enhanced Spatial ALD
10:40 AMPS+2D+SE+TF-FrM-8Taking Plasma ALD to the Next Level: From Fundamental Understanding to Selective 3D Processing
11:20 AMPS+2D+SE+TF-FrM-10Computational Investigation of Plasma Enhanced ALD of SiO2
11:40 AMPS+2D+SE+TF-FrM-11Analyzing Self-limiting Surface Reaction Mechanisms of Metal Alkyl Precursors and Nitrogen Plasma Species: Real-time In-situ Ellipsometric Monitoring of III-nitride Plasma-ALD Processes
12:00 PMPS+2D+SE+TF-FrM-12Tribological Properties of Plasma Enhanced Atomic Layer Deposition TiMoN with Substrate Bias
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