Nikolaus Dietz Memorial Session: Wide and Ultra-wide Band Gap Materials and Devices (EM+OX+TF-TuA)
Tuesday, Oct 22 2019 2:20PM, Room A210
Moderated by: Steven Durbin, Western Michigan University; Seth King, University of Wisconsin - La Crosse
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
2:20 PMEM+OX+TF-TuA-1Nitride-Based Semiconducting Materials: A Long Pathway to Advanced Nuclear Detection Capabilities
3:00 PMEM+OX+TF-TuA-3New Mg-based Ternary Nitrides for Wide Band Gap Device Applications
3:20 PMEM+OX+TF-TuA-4Low Temperature Growth of InN by Atomic Layer Epitaxy
4:20 PMEM+OX+TF-TuA-7Stochiometry- and Orientation-Dependent Native Point Defects of MOCVD-Grown ZnGeN2 Films
4:40 PMEM+OX+TF-TuA-8Low-temperature Growth of Wide Bandgap Nitride and Oxide Thin Films via Plasma-assisted Atomic Layer Deposition: Influence of rf-plasma Source and Plasma Power
5:00 PMEM+OX+TF-TuA-9Wide Bandgap Dilute Magnetic Semiconductors for Room Temperature Spintronic Applications
5:40 PMEM+OX+TF-TuA-11Processing and Characterization of Schottky and Ohmic contacts on (100) β-Ga2O3
6:00 PMEM+OX+TF-TuA-12III-Nitrides: Enabling Applications with Wide to Ultra-Wide Bandgap Materials and Devices
Page size:
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