Advanced Processes for Interconnects and Devices (EM+AP+MS+NS+TF-ThM)
Thursday, Oct 24 2019 8:00AM, Room A214
Moderated by: Andy Antonelli, Nanometrics; Bryan Wiggins, Intel Corporation
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
8:00 AMEM+AP+MS+NS+TF-ThM-1High-density Plasma for Soft Etching of Noble Metals
8:20 AMEM+AP+MS+NS+TF-ThM-2Crystalline InP Growth and Device Fabrication Directly on Amorphous Dielectrics at Temperatures below 400oC for Future 3D Integrated Circuits
8:40 AMEM+AP+MS+NS+TF-ThM-3The Role and Requirements of Selective Deposition in Advanced Patterning
9:20 AMEM+AP+MS+NS+TF-ThM-5Graphene-Template Assisted Selective Epitaxy (G-TASE) of Group IV Semiconductors
9:40 AMEM+AP+MS+NS+TF-ThM-6Resistivity and Surface Scattering Specularity at (0001) Ru/dielectric Interfaces
11:00 AMEM+AP+MS+NS+TF-ThM-10Electrochemical Atomic Layer Deposition and Etching of Metals for Atomically-Precise Fabrication of Semiconductor Interconnects
12:00 PMEM+AP+MS+NS+TF-ThM-13Wafer-Scale Fabrication of Carbon-Based Electronic Devices
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