New Devices and Materials for Electronics and Photonics (EM+2D+AP+NS+PS-TuM)
Tuesday, Oct 22 2019 8:00AM, Room A210
Moderated by: Sean W. King, Intel Corporation; Michelle M. Paquette, University of Missouri-Kansas City
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
8:00 AMEM+2D+AP+NS+PS-TuM-1Performance Modeling and Design for Spintronic Logic and Memory Devices
8:40 AMEM+2D+AP+NS+PS-TuM-3High Yield, Low Variability HfO2 1T1R Cells Fabricated in 65nm CMOS
9:00 AMEM+2D+AP+NS+PS-TuM-4Heat Transfer Proximity Effects in Resistive Memory Crossbar Arrays
9:20 AMEM+2D+AP+NS+PS-TuM-5High Performance Memristive Action in Methylammonium Bismuth Iodide([MA]3Bi2I9) Films
9:40 AMEM+2D+AP+NS+PS-TuM-6Mechanism of Chalcogen Passivation of GaAs Surfaces
11:00 AMEM+2D+AP+NS+PS-TuM-10Combining 2D and 1D Atomic Scale Tailored Nanowire Surfaces for Novel Electronics and Photonics
11:40 AMEM+2D+AP+NS+PS-TuM-12Nanoflower Decorated GaN and AlGaN/GaN based Catalyst-free CO Sensors
12:00 PMEM+2D+AP+NS+PS-TuM-13Surface Transfer Doping of Diamond by Complex Metal Oxides for Power Electronics: A Combined Experimental and Simulation Study
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