Thermal Atomic Layer Etching (AP+PS+TF-ThM)
Thursday, Oct 24 2019 8:00AM, Room A226
Moderated by: Craig Huffman, Micron; Eric A. Joseph, IBM T.J. Watson Research Center
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
8:00 AMAP+PS+TF-ThM-1A Challenge for Selective Atomic Layer Etching of Non-volatile Materials Using Organometalic Complex
8:40 AMAP+PS+TF-ThM-3Characterization of Isotropic Thermal ALE of Oxide Films and Nanometer-Size Structures
9:00 AMAP+PS+TF-ThM-4Advanced Selective Chemical Dry Etch for Oxide and Si-based Material
9:20 AMAP+PS+TF-ThM-5Mechanisms of Thermal Atomic Layer Etching (ALE) of Metal by Deprotonation and Complex Formation of Hexafluoroacetylacetone (hfacH)
9:40 AMAP+PS+TF-ThM-6Thermal Atomic Layer Etching of Amorphous and Crystalline Al2O3 Films
11:00 AMAP+PS+TF-ThM-10Thermal Atomic Layer Etching (ALE) of Germanium-Rich SiGe Films
11:20 AMAP+PS+TF-ThM-11Thermal Atomic Layer Etching of GaN and Ga2O3 Using Sequential Fluorination and Ligand-Exchange Reactions
11:40 AMAP+PS+TF-ThM-12Mechanistic Insights into Thermal Dry Atomic Layer Processing of Metals
1
Page size:
 8 items in 1 pages