Advancing Metrology and Characterization to enable Atomic Layer Processing (AP+EL+MS+PS+SS+TF-TuA)
Tuesday, Oct 22 2019 2:20PM, Room B130
Moderated by: Eric A. Joseph, IBM T.J. Watson Research Center; Jessica Kachian, Intel Corporation
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
2:20 PMAP+EL+MS+PS+SS+TF-TuA-1In Situ Ellipsometry Characterization Of Atomic Layer Processes: A Review
3:00 PMAP+EL+MS+PS+SS+TF-TuA-3Elucidating the Mechanisms for Atomic Layer Growth through In Situ Studies
4:20 PMAP+EL+MS+PS+SS+TF-TuA-7Surface, Interface, or Film: A Discussion of the Metrology of ALD Materials in Semiconductor Applications
5:00 PMAP+EL+MS+PS+SS+TF-TuA-9In Line and Ex Situ Metrology and Characterization to Enable Area Selective Deposition
5:20 PMAP+EL+MS+PS+SS+TF-TuA-10Recent Progress in Thin Film Conformality Analysis with Microscopic Lateral High-aspect-ratio Test Structures
6:00 PMAP+EL+MS+PS+SS+TF-TuA-12In operando XPS Study on Atomic Layer Etching of Fe and Co Using Cl2and Acetylacetone or Hexafluoroacetylacetone
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