Area Selective Deposition and Selective-Area Patterning (AP+2D+EM+PS+TF-MoM)
Monday, Oct 21 2019 8:20AM, Room A214
Moderated by: Satoshi Hamaguchi, Osaka University, Japan; Eric A. Joseph, IBM T.J. Watson Research Center
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
8:40 AMAP+2D+EM+PS+TF-MoM-2Surface Pre-functionalization of SiNx and SiO2 to Enhance Selectivity in Plasma‚ÄĎAssisted Atomic Layer Etching
9:00 AMAP+2D+EM+PS+TF-MoM-3Area-selective Atmospheric-pressure Spatial ALD of SiO2 using Interleaved Back-etch steps Yielding Selectivity > 10 nm
9:20 AMAP+2D+EM+PS+TF-MoM-4Mechanisms of Precursor Blocking during Area-selective Atomic Layer Deposition using Inhibitors in ABC-type Cycles
9:40 AMAP+2D+EM+PS+TF-MoM-5Area-Selective Deposition of TiO2 using Isothermal Integrated Atomic Layer Deposition and Atomic Layer Etching in a Single Reaction Chamber
10:40 AMAP+2D+EM+PS+TF-MoM-8Area-Selective Atomic Layer Deposition of Metal Oxides on an Inhibitor-Functionalized SiO2 Surface
11:00 AMAP+2D+EM+PS+TF-MoM-9Area-selective Deposition Achieved in a Continuous Process using Competitive Adsorption
11:20 AMAP+2D+EM+PS+TF-MoM-10Surface Chemistry during Plasma-Assisted ALE: What Can We Learn from ALD?
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