2D Device Physics and Applications (2D+EM+MN+NS-WeA)
Wednesday, Oct 23 2019 2:20PM, Room A216
Moderated by: Ivan Oleynik, University of South Florida
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
2:20 PM2D+EM+MN+NS-WeA-1Monolayer Electronics and Optoelectronics - Advances, Opportunities and Challenges
3:00 PM2D+EM+MN+NS-WeA-3Investigation on Graphene Band-gap Engineering for Graphene Transistors Applications
3:20 PM2D+EM+MN+NS-WeA-4Fully Inkjet Printed, High Photo-responsive, 2D WSe2-Graphene Based Flexible Photodetector
4:20 PM2D+EM+MN+NS-WeA-7Chemical Vapor Sensing with Transition Metal Dichalcogenides via Photoluminescence Modulation
4:40 PM2D+EM+MN+NS-WeA-8Effective and Robust Graphene Immunoligical Sensors Functionalized through Non-covalent Ninding of Antibody-Conjugated Tripodal Compound
5:00 PM2D+EM+MN+NS-WeA-9Electronic Properties of Ultra-Thin Na3Bi: A Platform for a Topological Transistor
5:40 PM2D+EM+MN+NS-WeA-11Transparent Conductive Oxides in Contact with 2-D Materials
6:00 PM2D+EM+MN+NS-WeA-12Negative Fermi-level Pinning Effect Induced by Graphene Interlayer in Metal/Graphene/Semiconductor Junction
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